Semiconductors -- September 2002

Doping of GaAs Layers with Si under Conditions of Low-Temperature Molecular Beam Epitaxy
M. D. Vilisova, A. E. Kunitsyn, L. G. Lavrent'eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. E. Toropov, and V. V. Chaldyshev
pp. 953-957    Full Text: PDF (67 kB)

Mechanism of Copper Diffusion over the Si(110) Surface
A. E. Dolbak, R. A. Zhachuk, and B. Z. Olshanetsky
pp. 958-961    Full Text: PDF (60 kB)

Internal Friction and Effective Shear Modulus of Single-Crystal Silicon in Early Stages of Oxygen Precipitation
V. V. Motskin, A. V. Oleinich-Lysyuck, N. D. Raranskii, and I. M. Fodchuk
pp. 962-965    Full Text: PDF (93 kB)

The Temperature and Concentration Dependences of the Charge Carrier Mobility in PbTe–MnTe Solid Solutions
E. I. Rogacheva and I. M. Krivul'kin
pp. 966-970    Full Text: PDF (85 kB)

Electron–Plasmon Interaction in Acceptor-Doped Bismuth Crystals
N. P. Stepanov and V. M. Grabov
pp. 971-974    Full Text: PDF (63 kB)

Study of Zinc Impurity Atoms in GaP, GaAs, and GaSb ⁶⁷Ga(⁶⁷Zn) and ⁶⁷Cu(⁶⁷Zn) by Emission Mössbauer Spectroscopy
N. P. Seregin, S. A. Nemov, and S. M. Irkaev
pp. 975-976    Full Text: PDF (67 kB)

Cathodoluminescence of ZnO/GaN/alpha-Al₂O₃ Heteroepitaxial Structures Grown by Chemical Vapor Deposition
M. V. Chukichev, B. M. Ataev, V. V. Mamedov, Ya. I. Alivov, and I. I. Khodos
pp. 977-980    Full Text: PDF (73 kB)

Experimental Observation of Splitting of the Light and Heavy Hole Bands in Elastically Strained GaAsN
A. Yu. Egorov, E. S. Semenova, V. M. Ustinov, Y. G. Hong, and C. Tu
pp. 981-984    Full Text: PDF (54 kB)

Variations in the Properties of an Implantation-Synthesized Si_xN_y–Si Heterosystem as a Result of Thermal and Ion-Beam Treatments
V. V. Karzanov, K. A. Markov, V. V. Sdobnyakov, and E. S. Demidov
pp. 985-989    Full Text: PDF (154 kB)

Optical Storage on the Basis of an n-InSb–SiO₂–p-Si Heterostructure
Yu. A. Nikol'skii
pp. 990-992    Full Text: PDF (47 kB)

Field-Dependent Photosensitivity of In–SiO₂–Cd_0.28Hg_0.72Te Metal–Insulator–Semiconductor Structures with an Opaque Field Electrode
V. V. Vasil'ev, A. F. Kravchenko, and Yu. P. Mashukov
pp. 993-996    Full Text: PDF (54 kB)

Effect of Carrier Localization on the Optical Properties of MBE-Grown GaAsN/GaAs Heterostructures
B. V. Volovik, N. V. Kryzhanovskaya, D. S. Sizov, A. R. Kovsh, A. F. Tsatsul'nikov, J. Y. Chi, J. S. Wang, L. Wei, and V. M. Ustinov
pp. 997-1000    Full Text: PDF (69 kB)

Charge Carrier Transport through the Contact of Metal with a Superconducting Semiconductor
G. V. Kuznetsov
pp. 1001-1007    Full Text: PDF (90 kB)

Adsorption and Transformation of C₆₀ Molecules at the (100) Si Surface
N. R. Gall, E. V. Rut'kov, and A. Ya. Tontegode
pp. 1008-1012    Full Text: PDF (101 kB)

Stark Effect in Vertically Coupled Quantum Dots in InAs–GaAs Heterostructures
M. M. Sobolev, V. M. Ustinov, A. E. Zhukov, Yu. G. Musikhin, and N. N. Ledentsov
pp. 1013-1019    Full Text: PDF (130 kB)

The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix
D. S. Sizov, M. V. Maksimov, A. F. Tsatsul'nikov, N. A. Cherkashin, N. V. Kryzhanovskaya, A. B. Zhukov, N. A. Maleev, S. S. Mikhrin, A. P. Vasil'ev, R. Selin, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, and Zh. I. Alferov
pp. 1020-1026    Full Text: PDF (96 kB)

Photoluminescent and Electronic Properties of Nanocrystalline Silicon Doped with Gold
É. B. Kaganovich, I. M. Kizyak, S. I. Kirillova, É. G. Manoilov, V. E. Primachenko, S. V. Svechnikov, and E. F. Venger
pp. 1027-1032    Full Text: PDF (81 kB)

Strains and Crystal Lattice Defects Arising in Macroporous Silicon under Oxidation
E. V. Astrova, V. V. Ratnikov, A. D. Remenyuk, and I. L. Shul'pina
pp. 1033-1042    Full Text: PDF (277 kB)

Hysteresis of the Photonic Band Gap in VO₂ Photonic Crystal in the Semiconductor–Metal Phase Transition
V. G. Golubev, D. A. Kurdyukov, A. B. Pevtsov, A. V. Sel'kin, E. B. Shadrin, A. V. Il'inskii, and R. Boeyink
pp. 1043-1047    Full Text: PDF (96 kB)

Photoelectric Phenomena in ZnO(ITO)/a-Si:H(n)/c-Si(p)/Al Solar Cells
Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, W. Fuhs, and A. Froitzheim
pp. 1048-1052    Full Text: PDF (85 kB)

Analysis of High-Frequency Response and Nonlinear Coherent Generation of Resonance–Tunneling Diodes within a Broad Frequency Range with Account of Electron–Electron Interaction
V. F. Elesin, I. Yu. Kateev, and A. I. Podlivaev
pp. 1053-1057    Full Text: PDF (61 kB)

Study of the Potential Distribution in a Forward-Biased Silicon Diode Using Electrostatic Force Microscopy
A. V. Ankudinov, A. N. Titkov, R. Laiho, and V. A. Kozlov
pp. 1058-1064    Full Text: PDF (191 kB)

MOCVD-Grown InGaAs/GaAs/AlGaAs Laser Structures with a Broad-Area Contact
P. V. Bulaev, V. A. Kapitonov, A. V. Lutetskii, A. A. Marmalyuk, D. B. Nikitin, D. N. Nikolaev, A. A. Padalitsa, N. A. Pikhtin, A. D. Bondarev, I. D. Zalevskii, and I. S. Tarasov
pp. 1065-1069    Full Text: PDF (97 kB)

Éduard Mushegovich Kazaryan (on his 60th birthday)

pp. 1070-1071    Full Text: PDF (104 kB)