Technical Physics Letters -- February 2001
Volume 27, Issue 2,
pp. 87-170
Electron Structure of Thin Fullerene Films Deposited by Various Methods
A. L. Shakhmin, A. M. Khodorkovskii, S. V. Murashov, T. O. Artamonova, and A. V. Golod
pp. 87-89
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The Formation of Volume Elements for Microelectromechanical Systems in Polyimide by Method of Reactive Ion Beam Etching
A. I. Stognij, T. I. Orekhovskaya, Yu. V. Timoshkov, and S. V. Koryakin
pp. 90-92
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On the Adiabatic Theorem in Quantum Mechanics
A. G. Chirkov
pp. 93-96
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"Color" Dynamics Based on a Conservative System
O. I. Gorskii and Yu. P. Kuchugurnyi
pp. 97-101
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Dispersive Resonators with Volume Holographic Gratings
E. A. Tikhonov, V. I. Bezrodnyi, and T. N. Smirnova
pp. 102-103
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Nonlinear Response of the IVCT Band in the Absorption Spectra of Molybdenum Blue and Berlin Blue
A. A. Bugaev and S. E. Nikitin
pp. 104-107
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The Localized Gas Discharge Etching of Materials
A. V. Abramov, E. A. Abramova, and I. S. Surovtsev
pp. 108-109
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Single-Crystal Iron Garnet Films with Increased Thermal Stability of Magnetization and Ferromagnetic Resonance Field
S. I. Yushchuk and P. S. Kostyuk
pp. 110-111
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Measuring the Parameters of Photorefractive Crystals by an Electrooptical Compensation Method
A. V. Ilinskii and E. B. Shadrin
pp. 112-113
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Subnanometer Resolution in Depth Profiling Using Glancing Auger Electrons
M. N. Drozdov, V. M. Danil'tsev, Yu. N. Drozdov, O. I. Khrykin, and V. I. Shashkin
pp. 114-117
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The Spherical Stratification of Discharge in High-Molecular-Mass Gases
O. A. Nerushev, S. A. Novopashin, V. V. Radchenko, and G. I. Sukhinin
pp. 118-120
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A Strong Electromagnetic Field Generated by a Dipole
K. A. Zheltov
pp. 121-123
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Interferometric Study of an Elongated Element Model with Axisymmetric Streamlining for Two Mach Numbers (M = 3 and 4)
A. N. Mikhalev, A. B. Podlaskin, and V. A. Shiryaev
pp. 124-126
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Foam Stabilization by Surfactants: A Fractal-Percolation Fracture Model
Yu. V. Pakharukov and T. E. Shevnina
pp. 127-128
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Electric Field Affects the Charge State in Ion-Implanted SiSiO2 Structures
A. P. Baraban, L. V. Miloglyadova, and V. I. Ter-Nersesyants
pp. 129-131
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Thermostimulated Exoelectron Emission during the Structural Transition in Ca10(PO4)6(OH)2
N. A. Zakharov, V. A. Klyuev, and V. P. Orlovskii
pp. 132-133
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The Effect of Adsorption Complexes on the Electron Spectrum and Luminescence of Porous Silicon
A. A. Lisachenko and A. M. Aprelev
pp. 134-137
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Instantaneous Emission Brightness Kinetics of Zinc Sulfide Based Electroluminescent Thin-Film Emitters
N. T. Gurin, O. Yu. Sabitov, A. V. Shlyapin, and A. V. Yudenkov
pp. 138-140
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The Velocity and Attenuation of Outgoing Surface Acoustic Waves Measured Using an Ultrasonic Microscope with Two Focusing Transducers
S. A. Titov, R. G. Maev, and A. N. Bogachenkov
pp. 141-143
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BeamPlasma Discharge Dynamics in an Adiabatic Magnetic Trap
Yu. Ya. Volokolupov and M. A. Krasnogolovets
pp. 144-146
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Effect of the Spin Wave Decay in the Pinning Layer on the Spin Wave Resonance Band Intensity
A. M. Zyuzin, S. N. Sabaev, A. G. Bazhanov, and V. V. Radaikin
pp. 147-149
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Relativistic Gigawatt BWT Microwave Pulse Duration Increased upon Treating the Slow-Wave Structure Surface with a Low-Energy High-Current Electron Beam
A. V. Batrakov, K. V. Karlik, S. A. Kitsanov, A. I. Klimov, I. N. Konovalov, S. D. Korovin, G. A. Mesyats, G. E. Ozur, I. V. Pegel', S. D. Polevin, D. I. Proskurovskii, and M. Yu. Sukhov
pp. 150-152
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Multiparticle Tunneling during Field Electron Emission from Bi2CaSr2Cu2O8
V. I. Maslov
pp. 153-154
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The Field-Induced Ion Evaporation Effect in the Bipartition of Charged Droplets
A. I. Grigor'ev
pp. 155-156
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A Change in the Microwave Radiation Reflection upon a DielectricMetal Transition in Vanadium Dioxide
B. M. Gorelov, K. P. Konin, V. V. Koval', and V. M. Ogenko
pp. 157-159
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A New Integral Equation for Calculating Thin Electric Vibrators
V. A. Neganov, M. G. Kornev, and I. V. Matveev
pp. 160-163
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A Decrease in the Noise Stokes Field Modulation during the Induced Mandel'shtamBrillouin Scattering in a Single-Mode Optical Fiber with High Rayleigh Scattering Losses
A. A. Fotiadi and R. V. Kiyan
pp. 164-167
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Manganese DepthConcentration Profiles in Ion-Implanted Silicon Studied by Rutherford Backscattering
B. É. Égamberdiev and M. Yu. Adylov
pp. 168-170
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