Technical Physics Letters -- November 2002
Volume 28, Issue 11,
pp. 881-969
The Motion of a Neutral Spherical Particle between Coaxial Cylindrical Surfaces
A. A. Kyasov and G. V. Dedkov
pp. 881-882
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Electron-Microscopic Study of the PolyimideC70 Fullerene System
N. V. Kamanina and Yu. M. Voronin
pp. 883-884
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A Comparative Study of the Sorption Capacity of Activated Charcoal, Soot, and Fullerenes for Organochlorine Compounds
V. I. Berezkin, I. V. Viktorovskii, L. V. Golubev, V. N. Petrova, and L. O. Khoroshko
pp. 885-888
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Multivalent Substitution in a Quasi-Binary Ga1 x(IIMnIV)xAs Solid Solution
G. A. Medvedkin
pp. 889-892
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Features of Defect Formation on a Deformed Si(111) Surface
V. I. Betekhtin, N. N. Gorobei, V. E. Korsukov, A. S. Luk'yanenko, B. A. Obidov, and A. N. Tomilin
pp. 893-895
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Optical Absorption and Luminescent Properties of Melanin Films
V. P. Grishchuk, S. A. Davidenko, I. D. Zholner, A. B. Verbitskii, M. V. Kurik, and Yu. P. Piryatinskii
pp. 896-898
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KrCl and XeCl Exciplex Glow Discharge Lamps with an Output Power of ~1.5 kW
V. S. Skakun, M. I. Lomaev, V. F. Tarasenko, and D. V. Shitts
pp. 899-901
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Nondestructive Determination of the Characteristics of Porous Silicon Carbide Layers
V. B. Shuman and N. S. Savkina
pp. 902-903
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Energy Relaxation during Inelastic Electron Scattering on Localized States
V. K. Dugaev, V. L. Volkov, M. Oszwaldowski, and M. Vieira
pp. 904-906
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Microchannel Avalanche Photodetector Based on a SiSiO2 Structure
M. A. Musaev
pp. 907-909
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Spatiotemporal Structures in a Transversely Extended Semiconductor System
Yu. A. Astrov and H.-G. Purwins
pp. 910-912
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Threshold Electron Impact Ionization of Molecules
A. N. Zavilopulo and A. V. Snegursky
pp. 913-915
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Frequency Control in Wake Field Waveguide Structures
A. D. Kanareykin, I. L. Sheinman, and A. M. Al'tmark
pp. 916-918
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The Interaction between Charged Dust Particles in a Plasma
V. A. Gundienkov and S. I. Yakovlenko
pp. 919-922
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Alternative Analytical Solutions of the Diffusion (Thermal Conductivity) Equation for an Arbitrary Initial Concentration (Temperature) Distribution
R. Sh. Malkovich
pp. 923-924
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Phase Distortions in an Anisotropic Luneberg Lens
I. K. Meshkovsky and D. V. Shannikov
pp. 925-926
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Liquid Phase Epitaxy of (Sn2)1 x(InSb)x Solid Solution Layers
A. S. Saidov, A. Sh. Razzakov, and D. V. Saparov
pp. 927-928
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Nonselective Polycrystalline Radiation Detectors Based on Higher Manganese Silicides
T. S. Kamilov, A. Zh. Khusanov, M. K. Bakhadyrkhanov, and D. K. Kobilov
pp. 929-931
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The Effect of gamma Radiation on the Electrical Properties of Passive Coatings Based on Lead Borosilicate Glasses
P. B. Parchinskii
pp. 932-934
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Features of the Structure of a Porous Silicon Carbide Layer Obtained by Electrochemical Etching of a 6H-SiC Substrate
L. M. Sorokin, N. S. Savkina, V. B. Shuman, A. A. Lebedev, G. N. Mosina, and G. Hutchison
pp. 935-938
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Features of the Relaxation Polarization of a Polar Dielectric under Conditions of Large Electrothermal Loads
O. A. Emel'yanov
pp. 939-941
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Dispersion-Managed Soliton Propagation in Optic Fibers with Random Dispersion
F. Kh. Abdullaev and D. V. Navotny
pp. 942-944
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On the Conditions for Realization of Nonlinear Resonance in an Oscillating Charged Drop
S. O. Shiryaeva, D. F. Belonozhko, and A. I. Grigor'ev
pp. 945-948
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Recirculation Fiber Loop Interferometer with a Faraday Reflector
É. I. Alekseev, E. N. Bazarov, V. P. Gubin, V. G. Kovalenko, A. I. Sazonov, and N. I. Starostin
pp. 949-951
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Vapor Phase Synthesis of ZnO Structures
A. Kh. Abduev, A. Sh. Asvarov, A. K. Akhmedov, V. G. Baryshnikov, and E. I. Terukov
pp. 952-954
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Electrical Properties of CdxHg1 xTe and ZnxCdyHg1 x yTe Modified by Low-Energy Ion Bombardment
K. D. Mynbaev, N. L. Bazhenov, V. A. Smirnov, and V. I. Ivanov-Omskii
pp. 955-957
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Vector Singularities of Gaussian Beams in Uniaxial Crystals: Optical Vortex Generation
A. V. Volyar, T. A. Fadeeva, and Yu. A. Egorov
pp. 958-961
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A Study of the Oxygen Precipitation Kinetics in Zirconium-Doped Silicon
V. V. Svetukhin, A. G. Grishin, T. S. Il'ina, V. K. Prokof'eva, and B. N. Rygalin
pp. 962-963
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Room-Temperature Photoluminescence at 1.55 µm from Heterostructures with InAs/InGaAsN Quantum Dots on GaAs Substrates
V. A. Odnoblyudov, A. Yu. Egorov, N. V. Kryzhanovskaya, A. G. Gladyshev, V. V. Mamutin, A. F. Tsatsul'nikov, and V. M. Ustinov
pp. 964-966
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A Kinematic Approximation for the Coefficient of X-ray Wave Backscattering from a Strongly Bent Crystal
T. Tchen
pp. 967-969
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