Semiconductors -- February 1997

Photovoltaic effect in a p-type CuInSe₂/green leaf heterojunction
V. Yu. Rud', Yu. V. Rud', and V. Kh. Shpunt
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Electrothermal instabilities induced by a metastable electronic state in PbTe(Ga)
B. A. Akimov, N. B. Brandt, A. V. Albul, and L. I. Ryabova
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Resonant interaction of electrons with a high frequency electric field in two-barrier structures
I. V. Belyaeva, E. I. Golant, and A. B Pashkovskii
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Transport of hydrogen in films of graphite, amorphous silicon, and nickel oxide
I. E. Gabis
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Tunnel excess current in nondegenerate barrier (p–n and m–s) silicon-containing III–V structures
V. V. Evstropov, Yu. V. Zhilyaev, M. Dzhumaeva, and N. Nazarov
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Photosensitivity of porous silicon-silicon heterostructures
E. V. Astrova, A. A. Lebedev, A. D. Remenyuk, Yu. V. Rud', and V. Yu. Rud'
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Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C
M. V. Maksimov, N. Yu. Gordeev, S. V. Zaitsev, P. S. Kop'ev, I. V. Kochnev, N. N. Ledentsov, A. V. Lunev, S. S. Ruvimov, A. V. Sakharov, A. F. Tsatsul'nikov, Yu. M. Shernyakov, Zh. I. Alferov, and D. Bimberg
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Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures
I. L. Krestnikov, M. V. Maksimov, S. V. Ivanov, N. N. Ledentsov, S. V. Sorokin, A. F. Tsatsul'nikov, O. G. Lyublinskaya, B. V. Volovik, P. S. Kop'ev, and S. M. Sotomayor Torres
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Electron and hole spectra and selection rules for optical transitions in Ge_{1 – x}Si_x/Ge heterostructures
V. Ya. Aleshkin and N. A. Bekin
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Mechanical properties of pure and doped InP single crystals determined under local loading
Yu. S. Boyarskaya, D. Z. Grabko, M. I. Medinskaya, and N. A. Palistrant
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Unusual absorption "band" in the infrared spectrum of silicon annealed at high temperature and then rapidly cooled
N. S. Zhdanovich
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Numerical modeling of microplasma instability
B. I. Datsko
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Oscillations of a ballistic hole current through uniaxially compressed semiconductor layers
N. Z. Vagidov, Z. S. Gribnikov, and A. N. Korshak
Full Text: PDF (296 kB)

Trapping of hot electrons at repulsive centers under transverse runaway conditions
Z. S. Kachlishvili, Kh. Z. Kachlishvili, and F. G. Chumburidze
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Characteristic features of electron photoemission from the metal in SiC-based Schottky diodes
L. A. Kosyachenko, V. M. Sklyarchuk, and E. F. Sklyarchuk
Full Text: PDF (108 kB)

Breakdown electroluminescence spectra of silicon carbide p–n junctions
M. V. Belous, A. M. Genkin, V. K. Genkina, and O. A. Guseva
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The dominant mechanisms of charge-carrier scattering in lead telluride
D. M. Zayachuk
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Formation of order in a system of localized charges in disordered layers of solid solutions of cadmium telluride and cadmium sulfide
A. P. Belyaev, V. P. Rubets, and I. P. Kalinkin
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Two-electron tin centers with negative correlation energy in lead chalcogenides. Determination of the Hubbard energy
V. F. Masterov, F. S. Nasredinov, S. A. Nemov, and P. P. Seregin
Full Text: PDF (109 kB)

Effect of thermal annealing on the luminescence properties of ZnCdSe/ZnSe quantum-well structures
E. M. Dianov, P. A. Trubenko, E. É. Filimonov, and E. A. Shcherbakov
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Formation of radiation defects in high-resistivity silicon as a result of cyclic irradiation and annealing
E. M. Verbitskaya, V. K. Eremin, A. M. Ivanov, Z. Li, and B. Schmidt
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Photosensitivity of InP/CdS heterostructures in linearly polarized light
V. M. Botnaryuk, L. V. Gorchak, V. N. Pleshka, V. Yu. Rud', and Yu. V. Rud'
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Photoelectric properties of porous and single-crystal silicon heterocontacts
V. Yu. Rud' and Yu. V. Rud'
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Photoluminescence of anodized layers of CdSiAs₂
A. A. Lebedev, Yu. V. Rud', and V. Yu. Rud'
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Photoluminescence of anodized silicon carbide
V. F. Agekyan, Yu. A. Stepanov, A. A. Lebedev, A. A. Lebedev, and Yu. V. Rud'
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Semiconductors-97: Third Russian Conference on Semiconductor Physics

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