Semiconductors -- March 1997

Modeling the hydrogen distribution accompanying electron injection in SiO₂ films in strong electric fields
G. V. Gadiyak
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Effect of electron irradiation on the electrical properties of n-type Pb_{1 – x}Sn_xTe (x ~= 2) alloys
E. P. Skipetrov and A. N. Nekrasova
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Transport phenomena in n-Mn_xHg_{1 – x}Te/Cd_0.96Zn_0.04Te epitaxial films
G. V. Beketov, A. E. Belyaev, S. A. Vitusevich, S. V. Kavertsev, and S. M. Komirenko
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Scaling in the regime of the quantum Hall effect and hole localization in p-Ge/Ge_{1 – x}Si_x heterostructures
Yu. G. Arapov, N. A. Gorodilov, V. N. Neverov, G. I. Kharus, and N. G. Shelushinina
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Defects in intrinsic and pseudodoped amorphous hydrated silicon
O. A. Golikova
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Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates
A. N. Andreev, N. Yu. Smirnova, A. S. Tregubova, M. P. Shcheglov, and V. E. Chelnokov
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Structure and electrical conductivity of polycrystalline silicon films grown by molecular-beam deposition accompanied by low-energy ion bombardment of the growth surface
D. A. Pavlov, A. F. Khokhlov, D. V. Shungurov, and V. G. Shengurov
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Quasi-static capacitance of a MOS-FET upon saturation of the carrier drift velocity
M. V. Cheremisin
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Binding energy of shallow donors in asymmetrical systems of quantum wells
V. I. Belyavskii, M. V. Gol'dfarb, S. V. Shevtsov, and Yu. V. Kopaev
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Nonlinear conductivity and current–voltage characteristics of two-dimensional semiconductor superlattices
Yu. A. Romanov and E. V. Demidov
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Fabrication of blocked impurity-band structures on gallium-doped silicon by plasma hydrogenation
V. M. Émeksuzyan, G. N. Kamaev, G. N. Feofanov, and V. V. Bolotov
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Shubnikov–de Haas oscillations in HgSe and HgSe under hydrostatic pressure
É. A. Neifel'd, K. M. Demchuk, G. I. Kharus, A. É. Bubnova, L. I. Domanskaya, G. D. Shtrapenin, and S. Yu. Paranchich
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Thermoelectric figure of merit of monopolar semiconductors with finite dimensions
V. S. Zakordonets and G. N. Logvinov
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Galvanomagnetic phenomena in p-Hg_{1 – x}Mn_xTe solid solutions
R. I. Bashirov, R. R. Bashirov, V. A. Elizarov, and A. Yu. Mollaev
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Lattice vibrations in CuInSe₂ crystals
N. N. Syrbu, M. Bogdanash, and V. E. Tezlevan
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Anomalies in the low-temperature thermoelectric power of p-Bi₂Te₃ and Te associated with topological electronic transitions under pressure
E. S. Itskevich, L. M. Kashirskaya, and V. F. Kraidenov
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Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation
A. M. Myasnikov, V. I. Obodnikov, V. G. Seryapin, E. G. Tishkovskii, B. I. Fomin, and E. I. Cherepov
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Influence of elastic stresses on the character of epitaxial crystallization of (Hg, Mn)Te
S. V. Kavertsev and A. E. Belyaev
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Effect of illumination time on the annealing of optically created metastable defects in p-type a-Si:H
A. G. Kazanskii
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Recombination mechanisms in doped n-type Hg_{1 – x}Cd_xTe crystals and properties of diffusion p⁺ – n junctions based on them
V. V. Teterkin, S. Ya. Stochanskii, and F. F. Sizov
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Influence of the X-valley on the tunneling and lifetime of electrons in GaAs/AlAs heterostructures
E. V. Demidov
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Auger recombination in strained quantum wells
A. D. Andreev and G. G. Zegrya
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Luminescence of porous silicon in the infrared spectral region at room temperature
G. Polisskii, F. Koch, O. M. Sreseli, and A. V. Andrianov
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Negative differential resistivity of a nonideal Schottky barrier based on indium arsenide
A. V. Kalameitsev, D. A. Romanov, A. P. Kovchavtsev, G. L. Kuryshev, K. O. Postnikov, and I. M. Subbotin
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Luminescence of copper-aluminum diselenide
V. A. Savchuk, B. V. Korzun, N. A. Sobolev, and L. A. Makovetskaya
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The electrical activity of isoelectronic germanium impurities in lead chalcogenides
V. F. Masterov, F. S. Nasredinov, S. A. Nemov, P. P. Seregin, A. V. Ermolaev, and S. M. Irkaev
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