Semiconductors -- July 1997

Effect of impurities with variable valency on the transport phenomena in a quantum well
I. I. Lyapilin
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Charge-carrier lifetime in Hg_{1 – x}Cd_xTe (x = 0.22) structures grown by molecular-beam epitaxy
A. V. Voitsekhovskii, Yu. A. Denisov, A. P. Kokhanenko, V. S. Varavin, S. A. Dvoretskii, V. T. Liberman, N. N. Mikhailov, and Yu. G. Sidorov
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Frenkel'–Poole effect for boron impurity in silicon in strong warming electric fields
A. M. Kozlov and V. V. Ryl'kov
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Measurement of the diffusion length of minority charge carriers using real Schottky barriers
N. L. Dmitruk, O. Yu. Borkovskaya, and S. V. Mamykin
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Effect of successive implantation of Ag⁺(Cu⁺) and Xe⁺ ions on the recombination properties of Cd_xHg_{1 – x}Te crystals
M. I. Ibragimova, N. S. Baryshev, V. Yu. Petukhov, and I. B. Khaibullin
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Characteristic features of Raman scattering of light in silicon doped with high krypton doses
M. F. Galyautdinov, N. V. Kurbatova, S. A. Moiseev, and E. I. Shtyrkov
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Simulation of heat and mass transfer during growth of silicon carbide single crystals
B. A. Kirillov, A. S. Bakin, Yu. M. Tairov, and S. N. Solnyshkin
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Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides
V. M. Botnaryuk, A. V. Koval', A. V. Simashkevich, D. A. Sherban, V. Yu. Rud', and Yu. V. Rud'
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Photosensitivity of thin-film ZnO/CdS/Cu(In, Ga)Se₂ solar cells
T. Walter, V. Yu. Rud', Yu. V. Rud', and H. W. Schock
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High-temperature annealing and nuclear-transmutation doping of GaAs bombarded by reactor neutrons
V. N. Brudnyi, V. A. Novikov, V. V. Peshev, N. G. Kolin, and A. I. Noifekh
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Characteristic structural features of amorphous hydrated silicon films deposited by direct-currect decomposition of silane in a magnetic field
O. A. Golikova, A. N. Kuznetsov, V. Kh. Kudoyarova, and M. M. Kazanin
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Effect of laser irradiation on the photoconductivity and noise in n-Cd_x Hg_{1 – x}Te single crystals
A. I. Vlasenko, V. A. Gnatyuk, E. P. Kopishinskaya, and P. E. Mozol'
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Photoelasticity and quadratic permittivity of wide-gap semiconductors
S. Yu. Davydov and S. K. Tikhonov
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Role of spatial localization of a particle during tunneling
N. L. Chuprikov
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Variation of the optical properties of porous silicon as a result of thermal annealing in vacuum
V. A. Kiselev, S. V. Polisadin, and A. V. Postnikov
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Electron-hole scattering in p-type silicon with a low charge-carrier injection level
T. T. Mnatsakanov, L. I. Pomortseva, and V. B. Shuman
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Effect of tin impurity on the photoconductivity kinetics of thin amorphous layers of arsenic selenide
M. S. Iovu, E. P. Kolomeiko, and S. D. Shutov
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Study of submicron deposits in polycrystalline materials using the internal-friction method
Yu. N. Andreev, N. P. Yaroslavtsev, M. V. Bestaev, D. Ts. Dimitrov, V. A. Moshnikov, and Yu. M. Tairov
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Mechanism of electroluminescence of porous silicon in electrolytes
D. N. Goryachev, O. M. Sreseli, and L. V. Belyakov
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Excitonic effects in the photoconductivity of quantum-well Ga_xIn_{1 – x} As/InP structures
M. F. Panov and A. N. Pikhtin
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Lateral association of vertically coupled quantum dots
A. F. Tsatsul'nikov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, B. V. Volovik, A. A. Suvorova, N. A. Bert, and P. S. Kop'ev
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Characteristic features of silicon multijunction solar cells with vertical p–n junctions
E. G. Guk, T. A. Nalet, M. Z. Shvarts, and V. B. Shuman
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1/f noise in strongly doped n-type GaAs under band–band illumination conditions
N. V. D'yakonova, M. E. Levinshtein, S. L. Rumyantsev, and F. Pascal
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Longitudinal photoeffect in In_0.53Ga_0.47As p–n junctions
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
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Deep centers and negative temperature coefficient of the breakdown voltage of SiC p–n structures
A. A. Lebedev, S. Ortoland, C. Raynaud, M. L. Locatelli, D. Planson, and J. P. Chante
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Photoluminescence of erbium in amorphous hydrogenated phosphorus-doped silicon
E. I. Terukov, A. N. Kuznetsov, E. O. Parshin, G. Weiser, and H. Kuehne
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Photovoltaic effect in an asymmetric GaAs/AlGaAs nanostructure produced as a result of laser excitation
I. V. Kucherenko, L. K. Vodop'yanov, and V. I. Kadushkin
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A study of the excitonic characteristics in heterostructures with quantum wells and corrugated surface
I. A. Avrutskii and V. G. Litovchenko
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Faraday rotation of light in a microcavity
M. A. Kaliteevskii, A. V. Kavokin, and P. S. Kop'ev
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Effect of radiation on the characteristics of MIS structures containing rare-earth oxides
Ya. G. Fedorenko, L. A. Otavina, E. V. Ledeneva, and A. M. Sverdlova
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Calculation of a hierarchical PbS–C superlattice in a multiwell model
E. Ya. Glushko and V. N. Evteev
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Viktor Il'ich Fistul' (On his seventieth birthday)

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Electronic Phenomena in Chalcogenide Glassy Semiconductors Collective monograph edited by K. D. Tséndin, Nauka, St. Petersburg, 1986, 486 pages

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