Semiconductors -- August 1997

Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution
T. I. Voronina, T. S. Lagunova, M. P. Mikhailova, K. D. Moiseev, M. A. Sipovskaya, and Yu. P. Yakovlev
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Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams
G. É. Tsyrlin, V. N. Petrov, V. G. Dubrovskii, N. K. Polyakov, S. Ya. Tipisev, A. O. Golubok, and N. N. Ledentsov
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Two sources of excitation of photoluminescence of porous silicon
N. E. Korsunskaya, T. V. Torchinskaya, B. R. Dzhumaev, L. Yu. Khomenkova, and B. M. Bulakh
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Luminescence properties of InAs/GaAs quantum dots prepared by submonolayer migration-stimulated epitaxy
G. É. Tsyrlin, V. N. Petrov, M. V. Maksimov, and N. N. Ledentsov
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Hall effect in quasi-two-dimensional superlattices in nonquantizing magnetic and strong electric fields
G. M. Shmelev, É. M. Épshtein, and I. I. Maglevannyi
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Nonstationary thermoelectric power in multilayered structures with p–n junctions
V. N. Agarev
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Si/Si_{1 – x}Ge_x epitaxial layers and superlattices. Growth and structural characteristics
F. F. Sizov, V. P. Klad'ko, S. V. Plyatsko, A. P. Shevlyakov, Yu. N. Kozyrev, and V. M. Ogenko
Full Text: PDF (92 kB)

Simple method for reconstructing the doping fine structure in semiconductors from C – V measurements in an electrolytic cell
V. I. Shashkin, I. R. Karetnikova, A. V. Murel', I. M. Nefedov, and I. A. Shereshevskii
Full Text: PDF (95 kB)

Effect of pulsed laser irradiation on the optical characteristics and photoconductivity of the solid solutions CdHgTe
L. A. Golovan', P. K. Kashkarov, V. Yu. Timoshenko, and V. M. Lakeenkov
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Effect of an electric field on the relaxation of photoconductivity in n-Hg_0.8Cd_0.2Te crystals
I. S. Virt
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Calculation of the size-quantization levels in strained ZnCdSe/ZnSe quantum wells
M. V. Maksimov, I. L. Krestnikov, S. V. Ivanov, N. N. Ledentsov, and S. V. Sorokin
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Calculation of the trapping of hot electrons by repulsive centers under the conditions of a needle-type distribution function
Kh. Z. Kachlishvili, Z. S. Kachlishvili, and F. G. Chumburidze
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Properties of tellurium-doped gallium antimonide single crystals grown from nonstoichiometric melt
A. E. Kunitsyn, V. V. Chaldyshev, A. G. Mil'vidskaya, and M. G. Mil'vidskii
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Dependence of the resonant conductivity of symmetric double-barrier structures on the amplitude of rf field
E. I. Golant and A. B. Pashkovskii
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Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight
K. M. Doshchanov
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Total external x-ray reflection and infrared spectroscopy study of porous silicon and its aging
L.A. Balagurov, V.F. Pavlov, E.A. Petrova, and G.P. Boronina
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Calculation of 2p levels for thermal double donors in silicon
L. F. Makarenko
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Conductivity stimulated by temperature oscillations in dissociated cadmium telluride and cadmium sulfide solid solutions
A. P. Belyaev, V. P. Rubets, and I. P. Kalinkin
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Intrinsic photoconductivity in chromium disilicide epitaxial thin films
N. G. Galkin, A. V. Konchenko, and A. M. Maslov
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Enhancement of the photovoltaic effect in a two-dimensionally disordered medium
M. V. Éntin
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InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3–4 µm
T. N. Danilova, A. P. Danilova, O. G. Ershov, A. H. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev
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Electron-probe microanalysis of doped PbTe and Pb_0.8Sn_0.2Te single crystals
M. V. Bestaev, A. I. Gorelik, V. A. Moshnikov, and Yu. M. Tairov
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Steady-state lux-ampere characteristics of compensated crystals at various excitation intensities
A. A. Lebedev
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Evolution of static negative differential conductivity in Ga_{1 – x}Al_xAs as a function of the transverse magnetic field and the composition of the solid solution
G. É. Dzamukashvili, Z. S. Kachlishvili, and N. K. Metreveli
Full Text: PDF (104 kB)

Inversion of the conduction type of epitaxial films of PbSnTe solid solutions under the influence of laser irradiation at subthreshold power
Yu. B. Grekov, T. A. Shlyakhov, and N. A. Semikolenova
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Nature of E_c – 0.37 eV centers and the formation of high-resistivity layers in n-type silicon
O. V. Naumova, L. S. Smirnov, and V. F. Stas'
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Formation of oxygen precipitates in silicon
I. V. Antonova, V. P. Popov, S. S. Shaimeev, and A. Misiuk
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Transient photoelectric effect in pure, high-resistivity, highly biased metal-semiconductor and metal-insulator-semiconductor structures
B. I. Reznikov
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Injection currents in mixed-layer Ga_0.5In_1.5S₃ single crystals
I. M. Askerov and F. Yu. Asadov
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Conversion of red and infrared luminescence centers as a result of electron bombardment and annealing of CdS and CdS:Cu single crystals
G. E. Davidyuk, N. S. Bogdanyuk, A. P. Shavarova, and A. A. Fedonyuk
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Acceptors in Cd_{1 – x}Mn_xTe (x < 0.1)
A. I. Vlasenko, V. N. Babentsov, Z. K. Vlasenko, S. V. Svechnikov, I. M. Rarenko, Z. I. Zakharuk, E. S. Nikonyuk, and V. L. Shlyakhovyi
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Energy spectrum of n-type Pb_{1 – x}Sn_xTe (x = 0.22) bombarded by neutrons
E. P. Skipetrov, A. N. Nekrasova, and A. V. Ryazanov
Full Text: PDF (78 kB)