Semiconductors -- September 1997

Possibility of increasing the thermal stability of Si by doping with transition or rare-earth metals
V. M. Glazov, G. G. Timoshina, M. S. Mikhailova, and A. Ya. Potemkin
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Optical spectroscopy of excitonic states in zinc diarsenide
A. V. Mudryi, V. M. Trukhan, A. I. Patuk, I. A. Shakin, and S. F. Marenkin
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The valence band structure in chalcopyrite Cu(In,Ga)Se₂ films
A. S. Kindyak, V. V. Kindyak, and Yu. V. Rud'
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Electronic structure of the Er–O₆ complex in silicon
N. P. Il'in and V. F. Masterov
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Quenching of EL2 defect-induced luminescence in gallium arsenide by copper atoms
F. M. Vorobkalo, K. D. Glinchuk, and A. V. Prokhorovich
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Investigation of the parameters of deep centers in n-6HSiC epitaxial layers obtained by gas-phase epitaxy
A. A. Lebedev and D. V. Davydov
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Anomalous magnetic properties of the solid solutions (InSb_{1 – x}(CdTe)_x at low temperatures
A. V. Brodovoi, V. A. Brodovoi, L. M. Knorozok, V. G. Kolesnichenko, and S. P. Kolesnik
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Luminescence spectra of blue and green light-emitting diodes based on multilayer InGaN/AlGaN/GaN heterostructures with quantum wells
K. G. Zolina, V. E. Kudryashov, A. N. Turkin, and A. É. Yunovich
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Polarization photoluminescence study of the complex V_GaTe_As in n-type GaAs in the temperature range 77–230 K
A. A. Gutkin, M. A. Reshchikov, and V. E. Sedov
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The problem of intermediate temperatures or electric fields in the scattering of hot electrons by acoustic phonons
Z. S. Kachlishvili and L. G. Kukutariya
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Mechanisms of current flow in zinc telluride–zinc selenide heterojunctions
V. E. Baranyuk and V. P. Makhnii
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Resonant interaction of electrons with an rf electric field in asymmetric double-barrier structures
E. I. Golant and A. B. Pashkovskii
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Investigation of the heteroexpitaxial structures {p-3C/n-6H}-SiC
A. A. Lebedev, N. S. Savkina, A. S. Tregubova, and M. P. Shcheglov
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Radiative recombination rate in quantum-well structures in the model without k-selection
A. A. Afonenko, I. S. Manak, V. A. Shevtsov, and V. K. Kononenko
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Contact-free determination of the parameters of a 2D electron gas in GaAs/AlGaAs heterostructures
I. L. Drichko and I. Yu. Smirnov
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Binding energy of Coulomb acceptors in quantum-well systems
V. I. Belyavskii, M. V. Gol'dfarb, and Yu. V. Kopaev
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Photoelectric properties of GaAs/InAs heterostructures with quantum dots
B. N. Zvonkov, I. G. Malkina, E. R. Lin'kova, V. Ya. Aleshkin, I. A. Karpovich, and D. O. Filatov
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Quantum-dot lasers: Principal components of the threshold current density
S. V. Zaitsev, N. Yu. Gordeev, V. I. Kopchatov, A. M. Georgievskii, V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alfërov, and D. Bimberg
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The effect of a "Coulomb well" on the absorption and magnetoabsorption spectra of strained InGaAs/GaAs heterostructures
A. V. Kavokin, S. I. Kokhanovskii, A. I. Nesvizhkii, M. É. Sasin, R. P. Seisyan, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, and S. V. Gupalov
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The effect of a longitudinal magnetic field on electronic intersubband transitions in asymmetric heterostructures
F. T. Vas'ko and G. Ya. Kis
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Radiation hardness of porous silicon
V. V. Ushakov, V. A. Dravin, N. N. Mel'nik, V. A. Karavanskii, E. A. Konstantinova, and V. Yu. Timoshenko
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Study of porous silicon obtained by krypton ion implantation and laser annealing
M. F. Galyautdinov, N. V. Kurbatova, É. Yu. Buinova, E. I. Shtyrkov, and A. A. Bukharaev
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Photoluminescence and photoexcitation spectra of porous silicon subjected to anodic oxidation and etching
V. V. Filippov, P. P. Pershukevich, and V. P. Bondarenko
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Comparison of equilibrium and nonequilibrium charge carrier mobilities in polycrystalline synthetic diamond and amorphous diamond-like carbon films
Yu. V. Pleskov, A. R. Tameev, V. P. Varnin, I. G. Teremetskaya, and A. M. Baranov
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Recombination in the space charge region and its effect on the transmittance of bipolar transistors
S. V. Bulyarskii, N. S. Grushko, A. I. Somov, and A. V. Lakalin
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