Semiconductors -- October 1997

Thermodynamic analysis of the molecular-beam epitaxial growth of quaternary III-V compounds: Ga_xIn_{1 – x}P_yAs_{1 – y}
A. Yu. Egorov, A. R. Kovsh, A. E. Zhukov, V. M. Ustinov, and P. S. Kop'ev
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Application of elastic mid-infrared light scattering to the investigation of internal gettering in Czochralski-grown silicon
V. P. Kalinushkin, A. N. Buzynin, D. I. Murin, V. A. Yuryev, and O. V. Astaf'ev
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Molecular effect in the implantation of light ions in semiconductors
I. A. Abroyan and L. M. Nikulina
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Investigation of the structural properties of GaAs layers grown by molecular-beam epitaxy at low temperatures
G. B. Galiev, R. M. Imamov, B. K. Medvedev, V. G. Mokerov, É. Kh. Mukhamedzhanov, É. M. Pashaev, and V. B. Cheglakov
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Influence of fast-neutron irradiation on the intensity of the copper-related luminescence band at h nu_m = 1.01 eV in n-type GaAs
K. D. Glinchuk and A. V. Prokhorovich
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Thermopower of transmutation-doped Ge:Ga in the region for hopping conductivity
A. G. Andreev, A. G. Zabrodskii, S. V. Egorov, and I. P. Zvyagin
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Resonance acceptor states in uniaxially strained semiconductors
M. A. Odnoblyudov, A. A. Pakhomov, V. M. Chistyakov, and I. N. Yassievich
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Nuclear magnetic resonance spectra of ¹¹⁹Sn and ¹²⁵Te in SnTe and SnTe:Mn
V. V. Slyn'ko, E. I. Slyn'ko, A. G. Khandozhko, and Yu. K. Vygranenko
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Characterization of macrodefects in pure silcon carbide films using X-ray topography and Raman scattering
A. M. Danishevskii, A. S. Tregubova, and A. A. Lebedev
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Hole boil-off and the magnetoresitance of the semimagnetic semiconductor Hg_{1 – x}Mn_xTe_{1 – y}Se_y
N. K. Lerinman, P. D. Mar'yanchuk, A. I. Ponomarev, L. D. Sabirzyanova, and N. G. Shelushinina
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Effect of infrared laser radiation on the structure and electrophysical properties of undoped single-crystal InAs
S. V. Plyatsko and V. P. Klad'ko
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Effect of superstoichiometric components on the spectral and kinetic characteristics of the luminescence of ZnSe crystals with isovalent impurities
O. V. Vakulenko, V. N. Kravchenko, V. D. Ryzhikov, V. I. Silin, and N. G. Starzhinskii
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Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures
N. L. Bazhenov, G. G. Zegrya, V. I. Ivanov-Omskii, M. P. Mikhailova, M. Yu. Mikhailov, K. D. Moiseev, V. A. Smirnov, and Yu. P. Yakovlev
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Effect of deep levels on current excitation in 6H-SiC diodes
N. I. Kuznetsov and J. A. Edmond
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Effect of the electric field in the space-charge layer on the efficiency of short-wave photoelectric conversion in GaAs Schottky diodes
T. V. Blank, Yu. A. Gol'dberg, O. V. Konstantinov, O. I. Obolenskii, and E. A. Posse
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A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs system
G. É. Tsyrlin, N. P. Korneeva, V. N. Demidov, N. K. Polyakov, V. N. Petrov, and N. N. Ledentsov
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High-temperature irradiation of gallium arsenide
V. V. Peshev and S. V. Smorodinov
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The role of defects in the formation of local states induced by atoms adsorbed on a semiconductor surface
S. Yu. Davydov
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Characteristics of the formation of (Al, Ga)Sb/InAs heterointerfaces in molecular-beam epitaxy
P. V. Neklyudov, S. V. Ivanov, B. Ya. Mel'tser, and P. S. Kop'ev
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Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures
Yu. B. Vasil'ev, S. D. Suchalkin, S. V. Ivanov, B. Ya. Mel'tser, A. F. Tsatsul'nikov, P. V. Neklyudov, and P. S. Kop'ev
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Deep-level transient spectroscopy in InAs/GaAs laser structures with vertically coupled quantum dots
M. M. Sobolev, A. R. Kovsh, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, M. V. Maksimov, and N. N. Ledentsov
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Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy
V. M. Ustinov, A. E. Zhukov, A. F. Tsatsul'nikov, A. Yu. Egorov, A. R. Kovsh, M. V. Maksimov, A. A. Suvorova, N. A. Bert, and P. S. Kop'ev
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Structure and properties of porous silicon obtained by photoanodization
E. V. Astrova, V. V. Ratnikov, R. F. Vitman, A. A. Lebedev, A. D. Remenyuk, and Yu. V. Rud'
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Optimization of the operating conditions of thermocouples allowing for nonlinearity of the temperature distribution
S. V. Ordin
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Effect of an external bias voltage on the photoelectric properties of silicon MIS/IL structures
Ya. S. Budzhak, V. Yu. Erokhov, and I. I. Mel'nik
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Erratum: Structure and electrical conductivity of polycrystalline silicon films grown by molecular-beam deposition accompanied by low-energy ion bombardment of the growth surface [Semiconductors 31, 237–240 (March 1997)]
D. A. Pavlov, A. F. Khokhlov, D. V. Shungurov, and V. G. Shengurov
Full Text: PDF (18 kB)