Semiconductors -- April 1998

Quantum dot heterostructures: fabrication, properties, lasers (Review)
N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin., P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
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Effect of nonuniform distribution of radiation defects in GaAs on the DLTS spectra
V. A. Novikov and V. V. Peshev
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Influence of the initial boron doping level on the boron atom distribution arising as a result of heat treatment in silicon implanted with boron ions
V. I. Obodnikov and E. G. Tishkovskii
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Observation of low-temperature diffusion of aluminum impurity atoms in hydrogen-implanted silicon
Yu. V. Gorelkinskii, B. N. Mukashev, and Kh. A. Abdullin
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Thermal expansion and characteristic features of the strength of interatomic bonds in melts of III–V compounds (AlSb, GaSb, InSb, GaAs, InAs)
V. M. Glazov and O. D. Shchelikov
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Optical absorption and photosensitivity of CuIn_xGa_{1 – x}Se₂ thin film structures
V. Yu. Rud', Yu. V. Rud', I. V. Bodnar', and V. F. Gremenok
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On trapping of minority current carriers in n-type Cd_xHg_{1 – x}Te at low temperatures
S. G. Gasan-zade and G. A. Shepel'skii
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Short-wavelength photoluminescence of SiO₂ layers implanted with high doses of Si⁺, Ge⁺, and Ar⁺ ions
G. A. Kachurin, L. Rebohle, W. Skorupa, R. A. Yankov, I. E. Tyschenko, H. Froeb, T. Boehme, and K. Leo
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Characteristic features of the defect formation process in Pb_{1 – x}Sn_xSe(x <= 0.06)
A. N. Veis and N. A. Suvorova
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Energy spectrum of acceptors in the semimagnetic semiconductors p-Hg_{1 – x}Mn_xTe in the spin-glass region
E. I. Georgitsé, V. I. Ivanov-Omskii, and D. I. Tsypishka
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Indirect electronic transitions in semiconductors occurring as a result of scattering of charge carriers by dislocations in a quantizing magnetic field
É. M. Kazaryan and K. A. Mkhoyan
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Recombination of donor nickel excitons in the solid solutions ZnSe_{1 – y}S_y:Ni
V. I. Sokolov and O. V. Dolzhenkov
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Photosensitivity of thin-film structures based on laser-deposited CuIn(Te_xSe_{1 – x})₂ layers
I. V. Bodnar', V. F. Gremenok, V. Yu. Rud', and Yu. V. Rud'
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Electric and photoelectric properties of n-Ga_xIn_{1 – x}N/p-Si anisotypic heterojunctions
S. E. Aleksandrov, V. A. Zykov, T. A. Gavrikova, and D. M. Krasovitskii
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Intraband absorption of light in quantum wells induced by electron-electron collisions
G. G. Zegrya and V. E. Perlin
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Radiation emitted by quantum-well InGaAs structures I. Spontaneous emission spectra
P. G. Eliseev and I. V. Akimova
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Radiation emitted by InGaAs quantum-well structures. II. Homogeneous lineshape function
P. G. Eliseev and I. V. Akimova
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Staebler–Wronski effect as a function of the Fermi level position and structure of nondoped, amorphous, hydrated silicon
O. A. Golikova, M. M. Kazanin, and V. Kh. Kudoyarova
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Study of optical absorption in thin films of a-As₂Se₃ by photocapacitance spectroscopy
I. A. Vasil'ev and S. D. Shutov
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Effect of thermal annealing and chemical treatment on the photoluminescence of porous silicon
E. A. Shelonin, M. V. Naidenkova, A. M. Khort, A. G. Yakovenko, A. A. Gvelesiani, and I. E. Maronchuk
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Subthreshold characteristics of electrostatically switched transistors and thyristors. II. Deep in-plane gate
A. S. Kyuregyan
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Amplification of electromagnetic waves at odd harmonics of the cyclotron resonance of heavy holes with negative effective masses in semiconducting diamond
V. A. Chuenkov
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Yaroslav Evgen'evich Pokrovski[i-breve] (On his 70th birthday)

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