Semiconductors -- November 1997
Volume 31, Issue 11,
pp. 1101-1215
Anisotropic thermocouples article
A. A. Snarskii, A. M. Pal'ti, and A. A. Ashcheulov
Full Text: PDF (286 kB)
Low-energy nonparabolicity and condenson states in In4Se3 crystals
D. M. Bercha, L. Yu. Kharkhalis, A. I. Bercha, and M. Shnajder
Full Text: PDF (153 kB)
Tunneling effects in light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with quantum wells
V. E. Kudryashov, K. G. Zolin, A. N. Turkin, A. É. Yunovich, A. N. Kovalev, and F. I. Manyakhin
Full Text: PDF (131 kB)
Electron-structural metastability of cationic donor centers in GaAs
D. E. Onopko, A. I. Ryskin, and N. T. Bagraev
Full Text: PDF (92 kB)
Optical properties of thin n-Pb1 – xSnxSe/BaF2 epitaxial layers in the plasmon–phonon interaction region
A. A. Kopylov, V. A. Moshnikov, and A. N. Kholodilov
Full Text: PDF (135 kB)
Position of antimony impurity atoms in a PbTe lattice, determined by emission Mössbauer spectroscopy
V. F. Masterov, F. S. Nasredinov, S. A. Nemov, P. P. Seregin, N. N. Troitskaya, and S. I. Bondarevskii
Full Text: PDF (47 kB)
Extraction of charge carriers in semiconductors with a monopolar component of the photoconductivity
A. I. Vlasenko, Z. K. Vlasenko, and A. V. Lyubchenko
Full Text: PDF (100 kB)
Photoluminescence of n-type ZnSe crystals doped with donor and acceptor impurities from a LiCl salt melt
G. N. Ivanova, V. A. Kasiyan, and D. D. Nedeoglo
Full Text: PDF (84 kB)
Effect of band-gap narrowing on the diffusion of charged impurities in semiconductors
B. S. Sokolovskii and L. S. Monastyrskii
Full Text: PDF (82 kB)
Photoconductivity of CuInSe2 films
V. Yu. Rud' and Yu. V. Rud'
Full Text: PDF (62 kB)
Relaxation properties of a metal–chalcogenide glassy semiconductor
V. T. Avanesyan, V. A. Bordovskii, and R. A. Castro
Full Text: PDF (42 kB)
Electrical and photoelectric properties of an anisotypic Pb0.93Sn0.07Se/PbSe heterojunction
T. A. Gavrikova and V. A. Zykov
Full Text: PDF (90 kB)
Excitonic electroluminescence of 6H-SiC p–n structures obtained by sublimation epitaxy
A. A. Lebedev, N. K. Poletaev, and M. Z. doKarmo
Full Text: PDF (63 kB)
Passivation of GaAs in alcohol solutions of ammonium sulfide
V. N. Bessolov, E. V. Konenkova, M. V. Lebedev, and D. R. T. Zahn
Full Text: PDF (105 kB)
Heating of a two-dimensional electron gas by the electric field of a surface acoustic wave
I. L. Drichko, A. M. D'yakonov, V. D. Kagan, A. M. Kreshchuk, T. A. Polyanskaya, I. G. Savel'ev, I. Yu. Smirnov, and A. V. Suslov
Full Text: PDF (175 kB)
Optical spectroscopy of two-dimensional electronic states in modulation-doped N-AlGaAs/GaAs heterostructures
A. V. Guk, V. É. Kaminskii, V. G. Mokerov, Yu. V. Fedorov, and Yu. V. Khabarov
Full Text: PDF (158 kB)
Effect of the spin-orbit interaction on the optical spectra of an acceptor in a semiconductor quantum dot
A. F. Polupanov, V. I. Galiev, and M. G. Novak
Full Text: PDF (161 kB)
Photoluminescence of porous gallium arsenide
D. N. Goryachev and O. M. Sreseli
Full Text: PDF (68 kB)
Polarization memory in an oxidized porous SiC layer
A. M. Danishevskii, A. Yu. Rogachev, V. B. Shuman, and E. G. Guk
Full Text: PDF (86 kB)
Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3µm
T. N. Danilova, A. P. Danilova, O. G. Ershov, A. N. Imenkov, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev
Full Text: PDF (89 kB)
Influence of valence band absorption on the threshold characteristics of long-wavelength InAs lasers
N. A. Gun'ko, G. G. Zegrya, N. V. Zotova, Z. N. Sokolova, N. M. Stus', and V. B. Khalfin
Full Text: PDF (296 kB)
Influence of plasma treatment of the surface of silicon carbide on the characteristics of buried-gate junction field-effect transistors
P. A. Ivanov, O. I. Kon'kov, V. N. Panteleev, and T. P. Samsonova
Full Text: PDF (64 kB)