Semiconductors -- February 1998

Recombination of charge carriers in dislocation-free silicon containing growth microdefects of various types
L. A. Kazakevich and P. F. Lugakov
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Radiation defect formation in Ge-doped silicon as a result of low-temperature irradiation
L. I. Khirunenko, V. I. Shakhovtsov, and V. V. Shumov
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Diffusion doping of undoped hydrogenated amorphous silicon with tin
G. S. Kulikov and K. Kh. Khodzhaev
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Ultrashallow p⁺-n junctions in silicon (100): electron-beam diagnostics of the surface zone
A. N. Andronov, S. V. Robozerov, N. T. Bagraev, and L. E. Klyachkin
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Exciton characteristics of intercalated TlGaSe₂ single crystal
S. N. Mustafaeva, E. M. Kerimova, and N. Z. Gasanov
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Deformation potentials of the Gamma(000) band extrema in CdGa₂S₄
T. G. Kerimova, Sh. S. Mamedov, and I. A. Mamedova
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Optical spectra of microcrystals of the layered semiconductor PbI₂ grown in glass matrices
A. S. Ablitsova, V. F. Agekyan, and A. Yu. Serov
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Excited states of chalcogen ions in germanium
A. Yu. Ushakov, R. M. Shterengas, L. M. Shterengas, and N. B. Radchuk
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Self-compensation in CdTe in the presence of phase equilibrium of the system crystal-cadmium (tellurium) vapor
O. A. Matveev and A. I. Terent'ev
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Negative dynamic differential conductivity at the cyclotron frequency in Ga_{1 – x}Al_xAs under conditions of ballistic intervalley electron transfer
G. É. Dzamukashvili, Z. S. Kachlishvili, and N. K. Metreveli
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The effect of copper doping of n-ZnSe crystals on the structure of luminescence centers of long-wavelength luminescence
G. N. Ivanova, V. A. Kasiyan, D. D. Nedeoglo, and S. V. Oprya
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The structure of high-temperature blue luminescence centers in zinc selenide and mechanisms of this luminescence
G. N. Ivanova, V. A. Kasiyan, N. D. Nedeoglo, D. D. Nedeoglo, and A. V. Simashkevich
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Effect of heteroepitaxial surface passivation on the photosensitivity spectra and recombination parameters of GaAs layers
I. A. Karpovich and M. V. Stepikhova
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Transient current in amorphous, porous semiconductor–crystalline semiconductor structures
L. P. Kazakova and É. A. Lebedev
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Current–voltage characteristics of Si:B blocked impurity–band structures under conditions of hopping-transport-limited photoresponse
B. A. Aronzon, D. Yu. Kovalev, A. M. Kozlov, J. Leotin, and V. V. Ryl'kov
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Ohmic contact formation during continuous heating of GaAs and GaP Shottky diodes
Yu. A. Goldberg and E. A. Posse
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Relaxation of the electric field in high-resistivity, strongly biased MISIM structures with deep impurity levels
B. I. Reznikov
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Photoelectrical memory in GaAs/AlGaAs multilayer quantum-well structures
V. N. Ovsyuk, M. A. Dem'yanenko, V. V. Shashkin, and A. I. Toropov
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Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs
T. I. Voronina, T. S. Lagunova, M. P. Mikhailova, K. D. Moiseev, A. E. Rosov, and Yu. P. Yakovlev
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Interband absorption of long-wavelength radiation in delta-doped superlattices based on single-crystal wide-gap semiconductors
V. V. Osipov, A. Yu. Selyakov, and M. Foygel
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Lateral traveling wave as a type of transient process in a resonant-tunneling structure
D. V. Mel'nikov and A. I. Podlivaev
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The structure of porous gallium phosphide
T. N. Zavaritskaya, A. V. Kvit, N. N. Mel'nik, and V. A. Karavanskii
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InAsSbP double-heterostructure lasers for the spectral range 2.7–3.0 µm (T = 77 K)
T. N. Danilova, A. P. Danilova, O. G. Ershov, A. N. Imenkov, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev
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Gamma-induced metastable states of doped, amorphous, hydrated silicon
M. S. Ablova, G. S. Kulikov, and S. K. Persheev
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Subthreshold characteristics of electrostatically controlled transistors and thyristors. 1. Shallow planar gate
A. S. Kyuregyan and S. N. Yurkov
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