Semiconductors -- November 1998
Volume 32, Issue 11,
pp. 1141-1256
REVIEW
Chalcogenide passivation of III–V semiconductor surfaces
V. N. Bessolov and M. V. Lebedev
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ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Scanning electron microscopy of long-wavelength laser structures
V. A. Solov'ev, M. P. Mikhailova, K. D. Moiseev, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev
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Formation of Se2 quasimolecules in selenium-doped silicon
A. A. Taskin and E. G. Tishkovskii
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Experimental study of the transverse Ettingshausen–Nernst effect and thermoelectric power in the presence of a large temperature gradient
M. M. Gadzhialiev and V. A. Elizarov
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Nonlinear waves of interacting charge carriers in semiconductors
V. E. Stepanov
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The magnetoplasma effect in single crystals of antimony at T >= 80 K
A. A. Zaitsev, K. G. Ivanov, and V. M. Grabov
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Influence of crystal orientation of the growth surface due to molecular beam epitaxy on the optical properties of Si-doped GaAs layers
V. G. Mokerov, G. B. Galiev, Yu. V. Slepnev, and Yu. V. Khabarov
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Effect of electron-phonon energy exchange on thermal wave propagation in semiconductors
Yu. G. Gurevich, G. González de la Cruz, G. N. Logvinov, and M. N. Kasyanchuk
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Nature of the donor action of Gd impurity in crystals of lead and tin telluride
D. M. Zayachuk and O. A. Dobryanskii
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Effect of laser-induced defects on luminescence in InP crystals
F. B. Baimbetov and N. G. Dzhumamukhambetov
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SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Study of the dynamical characteristics of an insulator–semiconductor interface
Y. G. Fedorenko, A. M. Sverdlova, and A. Malinin
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Effect of hydrogenation on the properties of metal–GaAs Schottky barrier contacts
V. G. Bozhkov, V. A. Kagadei, and N. A. Torkhov
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Electrical characteristics of silicon–rare-earth fluoride layered switching structures
V. A. Rozhkov and M. B. Shalimova
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LOW-DIMENSIONAL SYSTEMS
The spectrum of real-space indirect magnetoexcitons
N. E. Kaputkina and Yu. E. Lozovik
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Resonant tunneling dynamics of heterostructures based on semiconductors with two-valley spectra
G. F. Karavaev and A. A. Voronkov
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Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions
G. A. Kachurin, A. F. Leier, K. S. Zhuravlev, I. E. Tyschenko, A. K. Gutakovskii, V. A. Volodin, W. Skorupa, and R. A. Yankov
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Effect of size dispersion on the optical absorption of an ensemble of semiconductor quantum dots
M. I. Vasilevskii, E. I. Akinkina, A. M. de Paula, and E. V. Anda
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AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 µm) in erbium-doped a-Si:H films
V. Kh. Kudoyarova, A. N. Kuznetsov, E. I. Terukov, O. B. Gusev, Yu. A. Kudryavtsev, B. Ya. Ber, G. M. Gusinskii, W. Fuhs, G. Weiser, and H. Kuehne
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Influence of the deposition and annealing conditions on the optical properties of amorphous silicon
A. I. Mashin, A. V. Ershov, and D. A. Khokhlov
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PHYSICS OF SEMICONDUCTOR DEVICES
Influence of internal mechanical stresses on the characteristics of GaAs light-emitting diodes
V. G. Sidorov, D. V. Sidorov, and V. I. Sokolov
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Appearance of negative resistance in p – n junction structures in a microwave field
D. A. Usanov, A. V. Skripal', and N. V. Ugryumova
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OBITUARIES
In memory of Yuli[i-breve] Ivanovich Ukhanov
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In memory of Serge[i-breve] Ivanovich Radautsan
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ERRATA
Erratum: Radiation emitted by quantum-well InGaAs structures I. Spontaneous emission spectra [Semiconductors 32, 423–427 (April 1998)]
P. G. Eliseev and I. V. Akimova
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Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, No. 10, 1048 (October 1998)]
N. I. Katsavets, G. M. Laws, I. Harrison, E. C. Larkins, T. M. Benson, T. S. Cheng, and C. T. Foxon
Full Text: PDF (19 kB)