Semiconductors -- July 1998

Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500–700 °C
N. A. Bert, A. A. Suvorova, V. V. Chaldyshev, Yu. G. Musikhin, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and R. Werner
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Features of the electrical compensation of bismuth impurities in PbSe
S. A. Nemov, T. A. Gavrikova, V. A. Zykov, P. A. Osipov, and V. I. Proshin
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Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures
V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret'yakov, N. N. Faleev, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
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Stabilization of the physical properties of Cd_xHg_{1 – x}Se solid solutions doped with iron
O. S. Romanyuk, S. Yu. Paranchich, L. D. Paranchich, and V. N. Makogonenko
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Phase states and magnetic structure of superconducting lead inclusions in a narrow-gap PbTe semiconducting host
S. D. Darchuk, L. A. Korovina, F. F. Sizov, T. Dietl, S. Kolesnik, and M. Sawicki
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Properties of manganese-doped gallium arsenide layers grown by liquid-phase epitaxy from a bismuth melt
K. S. Zhuravlev, T. S. Shamirzaev, and N. A. Yakusheva
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Calculation of the energy levels of shallow acceptors in uniaxially strained germanium
M. A. Odnoblyudov and V. M. Chistyakov
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Effect of metal impurities on the drift mobility of charge carriers in glassy chalcogenide semiconductors
L. P. Kazakova and É. A. Lebedev
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Donorlike behavior of rare-earth impurities in PbTe
G. T. Alekseeva, M. V. Vedernikov, E. A. Gurieva, P. P. Konstantinov, L. V. Prokof'eva, and Yu. I. Ravich
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Contribution of light holes to the Hall effect for the complex valence band in germanium and its dependence on doping level
M. V. Alekseenko, A. G. Zabrodskii, and L. M. Shterengas
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Computer-simulation investigation of nonlinear transport dynamics in a compensated semiconductor during low-temperature electric breakdown
K. M. Jandieri and V. S. Kachlishvili
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Preparation and properties of GeS₂ single crystals
A. V. Golubkov, G. B. Dubrovskii, and A. I. Shelykh
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Photovoltaic effect in In/I–III–VI₂-thin-film surface-barrier structures
V. Yu. Rud', Yu. V. Rud', I. V. Bodnar', V. F. Gremenok, O. S. Obraztsova, and S. L. Sergeev-Nekrasov
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Allowing for current spreading in semiconductors during measurements of the contact resistivity of ohmic contacts
A. N. Andreev, M. G. Rastegaeva, V. P. Rastegaev, and S. A. Reshanov
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Donor-acceptor recombination in short-period silicon-doped GaAs/AlAs superlattices
I. I. Reshina and R. Planel'
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Theoretical study of the threshold characteristics of InGaN multiquantum well lasers
G. G. Zegrya and N. A. Gun'ko
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Modulation of optical absorption of GaAs/AlGaAs quantum wells in a transverse electric field
L. E. Vorob'ev, E. A. Zibik, D. A. Firsov, V. A. Shalygin, O. N. Nashchekina, and I. I. Saidashev
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Light absorption and refraction due to intersubband transitions of hot electrons in coupled GaAs/AlGaAs quantum wells
L. E. Vorob'ev, I. E. Titkov, D. A. Firsov, V. A. Shalygin, A. A. Toropov, T. V. Shubina, V. N. Tulupenko, and E. Towe
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Light absorption in aperiodic PbS/C superlattices in an electric field
S. F. Musikhin, V. I. Il'in, O. V. Rabizo, L. G. Bakueva, and L. V. Sharonova
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Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction
V. P. Evtikhiev, V. E. Tokranov, A. K. Kryzhanovskii, A. M. Boiko, R. A. Suris, A. N. Titkov, A. Nakamura, and M. Ichida
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Scattering of hot electrons by neutral acceptors in GaAs/AlAs quantum well structures
D. N. Mirlin, V. I. Perel', and I. I. Reshina
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Defects and short- and medium-range order in the structural network of hydrogenated amorphous silicon
O. A. Golikova and V. Kh. Kudoyarova
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Effect of deposition and annealing conditions on the optical properties of amorphous silicon
A. I. Mashin, A. V. Ershov, and D. A. Khokhlov
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Temperature dependence of the reverse current in Schottky barrier diodes
P. A. Pipinis, A. K. Rimeika, and V. A. Lapeika
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Use of direct wafer bonding of silicon for fabricating solar cell structures with vertical p–n junctions
V. B. Voronkov, E. G. Guk, V. A. Kozlov, M. Z. Shvarts, and V. B. Shuman
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Pulsed investigations of diode structures based on silicon-hydrogen films
S. V. Belov and A. A. Lebedev
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Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm
A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, S. V. Zaitsev, N. Yu. Gordeev, V. I. Kopchatov, A. V. Lunev, A. F. Tsatsul'nikov, B. V. Volovik, N. N. Ledentsov, and P. S. Kop'ev
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