Semiconductors -- September 1998

Correlation between the temperature dependence of the band gap and the temperature dependence of the enthalpy of semiconductor crystals
A. F. Revinskii
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Formation of donor centers upon annealing of dysprosium- and holmium-implanted silicon
O. V. Aleksandrov, A. O. Zakhar'in, N. A. Sobolev, E. I. Shek, M. I. Makoviichuk, and E. O. Parshin
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Normal lattice vibrations and the crystal structure of anisotropic modifications of boron nitride
S. V. Ordin, B. N. Sharupin, and M. I. Fedorov
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Physical properties of Cu_xAg_{1 – x}In₅S₈ single crystals and related surface-barrier structures
I. V. Bodnar', E. A. Kudritskaya, I. K. Polushina, V. Yu. Rud', and Yu. V. Rud'
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Optical reflection in Pb_0.78Sn_0.22Te doped to 3 at. % with indium
A. N. Veis and S. A. Nemov
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Electrical properties of silicon, heat-treated at 530 °C with subsequent electron bombardment
V. B. Neimash, V. M. Siratskii, A. N. Kraichinskii, and E. A. Puzenko
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The effect of antisite defects on the band structure and dielectric function of In_{1 – x}Ga_xSb solid solutions
V. G. Deibuk and V. I. Studenets
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Pressure dependence of the dielectric and optical properties of wide-gap semiconductors
S. Yu. Davydov and S. K. Tikhonov
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Optical properties of silicon-doped (100) GaAs layers grown by molecular-beam epitaxy
V. G. Mokerov, Yu. V. Fedorov, A. V. Guk, G. B. Galiev, V. A. Strakhov, and N. G. Yaremenko
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Mobility of charge carriers in double-layer PbTe/PbS structures
O. A. Aleksandrova, R. Ts. Bondokov, I. V. Saunin, and Yu. M. Tairov
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Many-body effects and electron tunneling in metal-insulator-p-type semiconductor structures
G. M. Min'kov, A. V. Germanenko, and O. É. Rut
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Current transport in porous p-Si and Pd-porous Si structures
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
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Determining surface recombination rates in epitaxial layers of n-Cd_xHg_{1 – x}Te from measurements of the planar magnetoresistance and relaxation times for nonequilibrium charge carriers
P. A. Borodovskii, A. F. Buldygin, and V. S. Varavin
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Physical model and results of numerical simulation of the degradation of a Si/SiO₂ structure as a result of annealing in vacuum
G. V. Gadiyak and J. H. Stathis
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The effect of a nonmonotonic potential profile on edge magnetic states
E. B. Gorokhov, D. A. Romanov, S. A. Studenikin, V. A. Tkachenko, and O. A. Tkachenko
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Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma
I. A. Karpovich, A. V. Anshon, and D. O. Filatov
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Localized states near the band gap of GaAs caused by tetrahedral arsenic clusters
S. N. Grinyaev and V. A. Chaldyshev
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Weak-field magnetoresistance of two-dimensional electrons in In_0.53Ga_0.47As/InP heterostructures in the persistent photoconductivity regime
D. D. Bykanov, A. M. Kreshchuk, S. V. Novikov, T. A. Polyanskaya, and I. G. Savel'ev
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Energy spectrum of a nonideal quantum well in an electric field
O. L. Lazarenkova and A. N. Pikhtin
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Effect of the quantum-dot surface density in the active region on injection-laser characteristics
A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, Yu. M. Shernyakov, M. V. Maksimov, A. F. Tsatsul'nikov, B. V. Volovik, A. V. Lunev, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
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Powerful far-infrared radiation of hot holes in a strained two-dimensional InGaAs/AlGaAs structure
Yu. L. Ivánov, S. A. Morozov, V. M. Ustinov, and A. E. Zhukov
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Composition and porosity of multicomponent structures: porous silicon as a three-component system
L. V. Belyakov, T. L. Makarova, V. I. Sakharov, I. T. Serenkov, and O. M. Sreseli
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Charge limit effects in emission from GaAs photocathodes at high optical excitation intensities
B. I. Reznikov and A. V. Subashiev
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Use of two low-temperature emitters to determine the cutoff wavelength of the photosensitivity of infrared photodetectors
V. V. Vasil'ev and Yu. P. Mashukov
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Spectral and mode characteristics of InAsSbP/InAsSb/InAsSbP lasers in the spectral region near 3.3 µm
A. A. Popov, V. V. Sherstnev, and Yu. P. Yakovlev
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Photocurrent amplification in Au/SiO₂/n-6H-SiC MOS structures with a tunnel-thin insulator
I. V. Grekhov, M. I. Veksler, P. A. Ivanov, T. P. Samsonova, and A. F. Shulekin
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Vladimir Idelevich Perel' (On His 70th Birthday)

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