Semiconductors -- August 1999

Distinctive features of the creation of radiation-induced defects in p-Si by photon-assisted low-dose ion implantation
M. Yu. Barabanenkov, A. V. Leonov, V. N. Mordkovich, and N. M. Omelyanovskaya
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Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
M. D. Vilisova, I. V. Ivonin, L. G. Lavrentieva, S. V. Subach, M. P. Yakubenya, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, Yu. G. Musikhin, and V. V. Chaldyshev
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Band-edge photoluminescence of heavily doped In_xGa_{1 – x}As_{1 – y}P_y (lambda = 1.2 µm)
M. V. Karachevtseva, V. A. Strakhov, and N. G. Yaremenko
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Determining the position of antimony impurity atoms in PbS by ¹¹⁹Sb(^119mSn) emission Mössbauer spectroscopy
V. F. Masterov, F. S. Nasredinov, P. P. Seregin, N. P. Seregin, A. V. Ermolaev, and S. I. Bondarevskii
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Intrinsic photoconductivity of copper-doped gallium phosphide
N. N. Pribylov, V. A. Buslov, S. I. Rembeza, A. I. Spirin, and S. A. Sushkov
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Determining the energy levels of elementary primary defects in silicon
V. V. Luk'yanitsa
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The influence of an external electric field and irradiation energy on the efficiency of Frenkel pair formation in silicon crystals
Z. V. Basheleishvili and T. A. Pagava
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Electrical properties of InSb irradiated with fast neutrons from a nuclear reactor
N. G. Kolin, D. I. Merkurisov, and S. P. Solov'ev
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Avalanche light-emitting diodes operating at room temperature based on single-crystal Si : Ho : O
N. A. Sobolev, A. M. Emel'yanov, and Yu. A. Nikolaev
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Conductivity of the insulating (oxide) layer on the surface of a semiconductor caused by electron-ion interaction at the insulator-semiconductor boundary
E. I. Goldman, A. G. Zhdan, and G. V. Chucheva
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Determination of the valence-band offset and its temperature dependence in isotypic heterojunctions p-Al_xGa_{1 – x}As/p-Al_yGa_{1 – y}As from C – V measurements
V. I. Zubkov, M. A. Mel'nik, A. V. Solomonov, A. N. Pikhtin, and F. Bugge
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Langevin-recombination-controlled explosive kinetics of electroluminescence in organic semiconductors
V. I. Arkhipov and V. R. Nikitenko
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Formation and thermal stability of contacts based on titanium borides and titanium nitrides with gallium arsenide
E. F. Venger, V. V. Milenin, I. B. Ermolovich, R. V. Konakova, V. N. Ivanov, and D. I. Voitsikhovskii
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Photosensitivity of structures produced by heat treatment of CuInSe₂ in different media
V. Yu. Rud' and Yu. V. Rud'
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Investigation of the effect of surface treatment of a semiconductor on the characteristics of 6H-SiC Schottky diodes
A. A. Lebedev, D. V. Davydov, V. V. Zelenin, and M. L. Korogodskii
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Free ion transport in the insulator layer and electron–ion exchange at an insulator–semiconductor phase boundary produced as a result of thermally stimulated ionic depolarization of silicon MOS structures
E. I. Gol'dman, A. G. Zhdan, and G. V. Chucheva
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Transformation of a metal–oxide–silicon structure into a resonance-tunneling structure with quasi-zero-dimensional quantum states
G. G. Kareva
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Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface
A. F. Tsatsul'nikov, D. A. Bedarev, B. V. Volovik, S. V. Ivanov, M. V. Maksimov, Yu. G. Musikhin, N. N. Ledentsov, B. Ya. Mel'tser, V. A. Solov'ev, P. S. Kop'ev, A. Yu. Chernyshov, and M. V. Belousov
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Submillimeter photoconductivity of two-dimensional electron structures in Corbino geometry
S. D. Suchalkin, Yu. B. Vasil'ev, S. V. Ivanov, and P. S. Kop'ev
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Interaction of surface acoustic waves with a two-dimensional electron gas in the presence of spin splitting of the Landau bands
I. L. Drichko, A. M. D'yakonov, I. Yu. Smirnov, V. V. Preobrazhenskii, and A. I. Toropov
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New approach to the analysis of negative magnetostriction in two-dimensional structures
G. M. Min'kov, S. A. Negashev, O. É. Rut, A. V. Germanenko, O. I. Khrykin, V. I. Shashkin, and V. M. Danil'tsev
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Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
B. V. Volovik, A. F. Tsatsul'nikov, D. A. Bedarev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, N. N. Ledentsov, M. V. Maksimov, N. A. Maleev, Yu. G. Musikhin, A. A. Suvorova, V. M. Ustinov, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg, and P. Werner
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Pulsed breakdown of chalcogenide glass semiconductor films in a magnetic field
É. N. Voronkov
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Multiple bonds in hydrogen-free amorphous silicon
A. I. Mashin and A. F. Khokhlov
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Current-voltage characteristics of Si:As blocked impurity band photodetectors with hopping conductivity (BIB-II)
D. G. Esaev, S. P. Sinitsa, and E. V. Chernyavskii
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Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval lambda = 3 – 5 µm
N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
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Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions
A. P. Danilova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev
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Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures
A. R. Kovsh, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul'nikov, M. V. Maksimov, B. V. Volovik, D. A. Bedarev, Yu. M. Shernyakov, E. Yu. Kondrat'eva, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
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