Semiconductors -- January 1999

Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0 – 1.6 µm
V. Yu. Davydov, V. V. Lundin, A. N. Smirnov, N. A. Sobolev, A. S. Usikov, A. M. Emel'yanov, M. I. Makoviichuk, and E. O. Parshin
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Thermally stimulated currents and instabilities of the photoresponse in PbTe(In) alloys at low temperatures
B. A. Akimov, V. A. Bogoyavlenskii, L. I. Ryabova, V. N. Vasil'kov, and E. I. Slyn'ko
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Influence of the energy transport of electrons by optical phonon emission on the superluminescence and reversible bleaching of a thin GaAs layer excited by a strong picosecond light pulse
I. L. Bronevoi and A. N. Krivonosov
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Fano effect in the magnetoabsorption spectra of gallium arsenide
D. V. Vasilenko, N. V. Luk'yanova, and R. P. Seisyan
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Correlation between the material parameters and conditions for the excitation of recombination waves in Si<S>
M. K. Bakhadyrkhanov, U. Kh. Kurbanova, and N. F. Zikrillaev
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Self-compensation in PbSe:Tl thin films
V. A. Zykov, T. A. Gavrikova, S. A. Nemov, and P. A. Osipov
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Electronic structure of C₆₀ films
V. V. Sobolev and E. L. Busypina
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Quasi-gapless semiconductor: p-type indium arsenide
M. I. Daunov, I. K. Kamilov, A. B. Magomedov, and A. Sh. Kirakosyan
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Optical absorption in PbGa₂Se₄ single crystals
B. G. Tagiev, N. N. Musaeva, and R. B. Dzhabbarov
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Characteristic features of the temperature dependence of the photoluminescence polarization of {Ga vacancy}–Sn_Ga(Si_Ga) complexes in GaAs produced as a result of resonant polarized excitation
A. A. Gutkin, M. A. Reshchikov, and V. E. Sedov
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Photoconductivity spectra of CdHgTe crystals with photoactive inclusions
A. I. Vlasenko, Z. K. Vlasenko, and A. V. Lyubchenko
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Theory of photovoltaic effects in crystals without an inversion center
R. Ya. Rasulov, Yu. E. Salenko, A. Tukhtamatov, T. Éski, and A. É. Avliyaev
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Ultrashallow p⁺ – n junctions in Si(111): electron-beam diagnostics of the surface region
N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, A. A. Andronov, and S. V. Robozerov
Full Text: PDF (130 kB)

Investigating the photosensitivity spectra of n-type GaAs–As₂Se₃ heterojunctions
I. P. Arzhanukhina, K. P. Kornev, and U. V. Seleznev
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Charging of deep-level centers and negative persistent photoconductivity in modulation-doped AlGaAs/GaAs heterostructures
V. I. Borisov, V. A. Sablikov, I. V. Borisova, and A. I. Chmil'
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Conductivity of thin nanocrystalline silicon films
V. G. Golubev, L. E. Morozova, A. B. Pevtsov, and N. A. Feoktistov
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Vertical screening in doped, intentionally disordered semiconductor superlattices
I. P. Zvyagin and M. A. Ormont
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Optical intersubband transitions in strained quantum wells utilizing In_{1 – x}Ga_xAs/InP solid solutions
S. A. Stoklitskii, V. N. Murzin, Yu. A. Mityagin, B. Monemar, and P. O. Holtz
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Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix
Zhao Zhen, D. A. Bedarev, B. V. Volovik, N. N. Ledentsov, A. V. Lunev, M. V. Maksimov, A. F. Tsatsul'nikov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, and P. S. Kop'ev
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Nonradiative recombination at shallow bound states in quantum-confined systems in an electric field
É. P. Sinyavskii and A. M. Rusanov
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Radiative tunneling recombination and luminescence of trapezoidal delta-doped superlattices
V. V. Osipov, A. Yu. Selyakov, and M. Foygel
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Influence of thermal annealing on the intensity of the 1.54-µm photoluminescence band in erbium-doped amorphous hydrogenated silicon
A. A. Andreev, V. B. Voronkov, V. G. Golubev, A. V. Medvedev, and A. B. Pevtsov
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Amorphous hydrogenated silicon films exhibiting enhanced photosensitivity
O. A. Golikova and M. M. Kazanin
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Effect of ion implantation on redistribution of erbium during solid-phase epitaxial crystallization of silicon
O. V. Aleksandrov, Yu. A. Nikolaev, and N. A. Sobolev
Full Text: PDF (99 kB)