Semiconductors -- March 1999

Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review
E. G. Guk, A. V. Kamanin, N. M. Shmidt, V. B. Shuman, and T. A. Yurre
Full Text: PDF (175 kB)

Dielectric properties of the semiconducting compounds Cd_1–xFe_xTe
P. V. Zukowski, J. Partyka, P. Wegierek, J. W. Sidorenko, J. A. Szostak, and A. Rodzik
Full Text: PDF (56 kB)

Current-illumination characteristics of CdHgTe crystals with photoactive inclusions
A. I. Vlasenko and Z. K. Vlasenko
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Temperature dependences of the photoconducitivty of CdHgTe crystals with photoactive inclusions
A. I. Vlasenko and Z. K. Vlasenko
Full Text: PDF (117 kB)

Raman scattering spectroscopy of Zn_{1 – x}Cd_xSe films grown on GaAs substrates by molecular-beam epitaxy
L. K. Vodop'yanov, N. N. Mel'nik, and Yu. G. Sadof'ev
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Optical and photoelectric properties of Zn_{1 – x}Fe_xTe crystals
Yu. P. Gnatenko, I. A. Farina, and R. V. Gamernyk
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Calculating the band structure of InSb_{1 – x}Bi_x solid solutions
V. G. Deibuk, Ya. I. Viklyuk, and I. M. Rarenko
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Effective charge carrier lifetime in CdHgTe variable-gap structures
V. M. Osadchii, A. O. Suslyakov, V. V. Vasil'ev, and S. A. Dvoretsky
Full Text: PDF (84 kB)

Polarization photosensitivity of GaN/Si heterojunctions
V. M. Botnaruk, S. D. Raevsky, V. V. Belkov, Yu. V. Zhilyaev, Yu. V. Rud, L. M. Fedorov, and V. Yu. Rud
Full Text: PDF (103 kB)

Mechanism for heavy Fe doping of epitaxial GaAs/AlGaAs heterostructures
I. Ya. Gerlovin, Yu. K. Dolgikh, S. A. Eliseev, Yu. P. Efimov, I. A. Nodokus, V. V. Ovsyankin, V. V. Petrov, and B. Ya. Ber
Full Text: PDF (58 kB)

Ion neutralization effects at a semiconductor-insulator interface produced as a result of space-charge thermal depolarization of MOS structures
E. I. Goldman, A. G. Zhdan, and N. F. Kukharskaya
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Selective doping in hydride epitaxy and the electrical properties of quantum-well Ge/GeSi:B heterostructures
L. K. Orlov, R. A. Rubtsova, and N. L. Orlova
Full Text: PDF (94 kB)

Photoluminescence and transport properties of multilayer InAs/GaAs structures with quantum dots
V. A. Kul'bachinskii, V. G. Kytin, R. A. Lunin, A. V. Golikov, I. G. Malkina, B. N. Zvonkov, and Yu. N. Saf'yanov
Full Text: PDF (124 kB)

Comparative study of the optical properties of porous silicon and the oxides SiO and SiO₂
A. N. Obraztsov, V. Yu. Timoshenko, H. Okushi, and H. Watanabe
Full Text: PDF (72 kB)

Photosensitive structures based on porous silicon
É. B. Kaganovich, É. G. Manoilov, and S. V. Svechnikov
Full Text: PDF (84 kB)

Photoconductivity of amorphous hydrated silicon doped by ion implantation
A. G. Kazanskii, N. V. Ryzhkova, and S. M. Pietruszko
Full Text: PDF (74 kB)

Electronic properties and structure of a-Si : H films with higher photosensitivity
O. A. Golikova and M. M. Kazanin
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Electrical and photoelectric characteristics of n-Si/porous silicon/Pd diode structures and the effect of gaseous hydrogen on them
S. V. Slobodchikov, D. N. Goryachev, Kh. M. Salikhov, and O. M. Sreseli
Full Text: PDF (95 kB)

Temperature dependence of the quantum efficiency of silicon p – n photodiodes
Yu. A. Goldberg, V. V. Zabrodsky, O. I. Obolensky, T. V. Petelina, and V. L. Suhanov
Full Text: PDF (51 kB)

Planar-doped gallium-arsenide structures for bulk potential barrier microwave diodes
N. A. Maleev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, V. V. Volkov, and M. F. Kokorev
Full Text: PDF (87 kB)

Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions
G. G. Zegrya, M. P. Mikhailova, T. N. Danilova, A. N. Imenkov, K. D. Moiseev, V. V. Sherstnev, and Yu. P. Yakovlev
Full Text: PDF (107 kB)

Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure
B. E. Zhurtanov, K. D. Moiseev, M. P. Mikhailova, T. I. Voronina, N. D. Stoyanov, and Yu. P. Yakovlev
Full Text: PDF (104 kB)

Effect of heat treatment on the photoelectric properties of Si(Zn) photodetectors
E. V. Astrova, V. B. Voronkov, A. A. Lebedev, A. N. Lodygin, and A. D. Remenyuk
Full Text: PDF (144 kB)

Vertical double-collector, strain-sensitive transistor with accelerating electric fields in the base and in the emitter
G. G. Babichev, S. I. Kozlovskii, and V. A. Romanov
Full Text: PDF (151 kB)