Semiconductors -- April 1999

Low-temperature relaxation of a solid solution of iron in gallium phosphide
E. S. Demidov, V. V. Karzanov, A. B. Gromoglasova, and O. N. Morozkin
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Modeling Si nanoprecipitate formation in SiO₂ layers with excess Si atoms
A. F. Leier, L. N. Safronov, and G. A. Kachurin
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Optical spectra and electronic structure of indium nitride
V. V. Sobolev and M. A. Zlobina
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Electrostatic model of the energy gap between Hubbard bands for boron atoms in silicon
N. A. Poklonskii and A. I. Syaglo
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The influence of defect clusters on redistribution of doping impurities in n- and p-type Si_0.7Ge_0.3 irradiated by reactor neutrons
A. P. Dolgolenko
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Acoustostimulated activation of bound defects in CdHgTe alloys
A. I. Vlasenko, Ya. M. Olikh, and R. K. Savkina
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A model of how the thermal ionization energy of impurities in semiconductors depends on their concentration and compensation
N. A. Poklonskii, A. I. Syaglo, and G. Biskupski
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Low-temperature photoluminescence in holmium-doped silicon
B. A. Andreev, N. A. Sobolev, Yu. A. Nikolaev, D. I. Kuritsin, M. I. Makovijchuk, and E. O. Parshin
Full Text: PDF (61 kB)

Generation-recombination instabilities in thin-film structures
V. V. Kolobaev
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Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures
V. M. Botnaryuk, Yu. V. Zhilyaev, Yu. V. Rud', and V. Yu. Rud'
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Surface of n-type InP (100) passivated in sulfide solutions
V. N. Bessolov, M. V. Lebedev, and D. R. T. Zahn
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Electrical and photoelectric characteristics of an isotypic n-ZnO–n-Si structure
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
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Analysis of mechanisms for electron scattering in GaAs/Al_xGa_{1 – x}As superlattices with doped quantum wells for longitudinal resonant current flow in high electric fields and at low temperatures
S. I. Borisenko and G. F. Karavaev
Full Text: PDF (149 kB)

Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells
V. E. Kudryashov, A. N. Turkin, A. É. Yunovich, A. N. Kovalev, and F. I. Manyakhin
Full Text: PDF (138 kB)

Photoionization of deep impurity centers in quantum well structures
V. I. Belyavskii and Yu. A. Pomerantsev
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Photovoltaic effect in the impurity absorption region of Si-structures with blocked impurity conductivity
B. A. Aronzon, V. V. Rylkov, L. Asadauskas, R. Brazis, D. Yu. Kovalev, and J. Leotin
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Defects in a-Si:H films induced by Si ion implantation
O. A. Golikova
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Absorption and the optical gap of a-C:H films produced from acetylene plasmas
E. A. Konshina
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Conductivity relaxation in coated porous silicon after annealing
S. P. Zimin and A. N. Bragin
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Photomemory in CdTe thin-film solar cells
É. N. Voronkov, A. E. Sharonov, and V. V. Kolobaev
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Polarization photosensitivity of ZnO/CdS/Cu(In,Ga)Se₂ solar cells
V. Yu. Rud', Yu. V. Rud', and H. W. Schock
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Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
A. F. Tsatsul'nikov, B. V. Volovik, N. N. Ledentsov, M. V. Maksimov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, P. S. Kop'ev, Zh. I. Alfërov, I. É. Kozin, M. V. Belousov, and D. Bimberg
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Influence of deep traps on current transport in Pd–p(n)–CdTe structures
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
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Determination of the parameters of deep levels from the relaxational delay of breakdown of a p–n junction
S. V. Bulyarskii, Yu. N. Serëzhkin, and V. K. Ionychev
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Effect of laser radiation on GaP epitaxial diode structures
V. V. Inyakov, E. N. Moos, and Yu. A. Shrainer
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Vitali[i-breve] Ivanovich Stafeev (on his 70th birthday)

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Aleksandr Aleksandrovich Lebedev (on his 70th birthday)

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