Semiconductors -- June 1999

Semiconductors -- June 1999

Volume 33, Issue 6, pp. 595-705

PUBLICATION OF THE SEMINAR PROCEEDINGS IS DEDICATED TO THE MEMORY OF V. F MASTEROV INTAS–RFBR Seminar on Rare-Earth Impurities in Semiconductors and Low-Dimensional Semiconductor Structures, St. Petersburg State Technical University, October 26, 1998 OPENING ADDRESS

Erbium-doped silicon epilayers grown by liquid-phase epitaxy

Photoluminescence of erbium-doped silicon: excitation power dependence

Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium

Redistribution of erbium during the crystallization of buried amorphous silicon layers

Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium- and dysprosium-implanted silicon

Influence of the orientation of the silicon substrate on the properties of avalanche Si:Er:O light-emitting structures

Mechanisms of excitation of the f – f emission in silicon codoped with erbium and oxygen

Mechanism of erbium electroluminescence in hydrogenated amorphous silicon

Effect of annealing on the optical and structural properties of GaN:Er

Optical activity of Yb in GaAs and low-dimensional GaAs/GaAlAs structures

ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS

Photothermoacoustic and photoelectric microscopy of silicon

Radiation-thermal activation of silicon implanted in gallium arsenide

ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS

Photoionization of short-range acceptor states in uniaxially deformed semiconductors

Electric and luminescence properties of GaAs–A^IIB^IVC₂^V single crystals

Reciprocal drag of electrons and phonons in strongly doped HgFeSe semiconductors

SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES

Scanning tunneling microscopy investigation of the microtopography of SiO₂ and Si surfaces at the Si/SiO₂ interface in SIMOX structures

Reconstruction and electron states of a Ga₂Se₃–GaAsheterointerface

Sulfide passivation of GaAs power diodes

Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor

Deep-level recombination spectroscopy in GaP light-emitting diodes

Influence of temperature on the spectral composition of the breakdown electroluminescence of silicon carbide p-n structures

LOW-DIMENSIONAL SYSTEMS

Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy

Dimensionality effects in the hot-electron photoluminescence of gallium arsenide: 2D–quasi-3D transition

AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS

Effect of substrate material on the rate of growth and the optical parameters of a-C : H layers

PHYSICS OF SEMICONDUCTOR DEVICES

Photosensitivity of GaAlAs/GaAs heterophotoelements in linearly polarized light

Increasing the power of broad-waveguide lasers by additional selection of transverse modes

Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers

PERSONALIA

In Memory of Vadim Fedorovich Masterov