Semiconductors -- November 2001
Volume 35, Issue 11,
pp. 1223-1346
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Physical Foundations of Metastable Impurity Center Reconstruction in Semiconductors
D. E. Onopko and A. I. Ryskin
pp. 1223-1230
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A Model of High- and Low-Temperature Phosphorus Diffusion in Silicon by a Dual Pair Mechanism
O. V. Aleksandrov
pp. 1231-1241
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
The Impurity Optical Absorption and Conduction Band Structure in 6H-SiC
I. S. Gorban'[dagger] and A. P. Krokhmal'
pp. 1242-1248
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Magnetic Properties of Pb1 xGexTe Alloys Doped with Ytterbium
E. P. Skipetrov, N. A. Chernova, L. A. Skipetrova, A. V. Golubev, and E. I. Slyn'ko
pp. 1249-1251
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On the Charge Transport Mechanism in n-InSb Films
Yu. A. Nikol'skii
pp. 1252-1253
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Effect of Bismuth Impurity on Carrier Density in PbSe:Bi:Se Epitaxial Layers
V. A. Zykov, T. A. Gavrikova, V. I. Il'in, S. A. Nemov, and P. V. Savintsev
pp. 1254-1258
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Photoelectric Phenomena in (µcxa1 x)-Si:H/c-Si Heterostructures
H. Mell, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 1259-1262
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A Pulsed Synthesis of beta-FeSi2 Layers on Silicon Implanted with Fe+ Ions
R. I. Batalov, R. M. Bayazitov, E. I. Terukov, V. Kh. Kudoyarova, G. Weiser, and H. Kuehne
pp. 1263-1269
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SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
GenerationRecombination and Diffusion Currents in HgMnTe n+p Junctions
L. A. Kosyachenko, A. V. Markov, S. É. Ostapov, and I. M. Rarenko
pp. 1270-1278
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Effect of Surface Orientation of CdxHg1 xTe Crystals on the Properties of Surface Anodic Oxides
V. G. Sredin, Yu. S. Mezin, and V. M. Ukrozhenko
pp. 1279-1281
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Photosensitivity of a - C:H/c -Si Heterojunctions
V. G. Baryshnikov, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 1282-1284
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Reverse Current in Graded-Gap pn Structure with Nonmonotonic Coordinate Dependence of the Band Gap
B. S. Sokolovskii
pp. 1285-1290
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Role of Sulfide Ion Solvation in the Modification of GaAs Surface Electronic Structure
M. V. Lebedev
pp. 1291-1299
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LOW-DIMENSIONAL SYSTEMS
Analogue of Gunn Effect in Tunneling between Quantum Wells with Different Mobilities
P. I. Biryulin, A. A. Gorbatsevich, V. V. Kapaev, Yu. V. Kopaev, and V. T. Trofimov
pp. 1300-1304
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Electron Nonelastic Scattering by Confined and Interface Polar Optical Phonons in a Modulation-Doped AlGaAs/GaAs/AlGaAs Quantum Well
K. Pozela
pp. 1305-1308
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Electrical Characteristics of Single-Gate Interference Transistors Based on Various Semiconductor Materials
I. I. Abramov and A. I. Rahachou
pp. 1309-1313
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Medium-Range Order and Optoelectronic Properties of a Tetrahedrally Coordinated Hydrogenated Amorphous Semiconductor
O. A. Golikova
pp. 1314-1319
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Structural and Photonic Properties of OpalGaN Nanocomposites
V. G. Golubev, D. A. Kurdyukov, A. V. Medvedev, A. B. Pevtsov, L. M. Sorokin, and J. L. Hutchison
pp. 1320-1323
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PHYSICS OF SEMICONDUCTOR DEVICES
MOCVD-Grown Broad Area InGaAs/GaAs/InGaP Laser Diodes
D. A. Vinokurov, V. A. Kapitonov, D. N. Nikolaev, A. L. Stankevich, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, I. N. Arsent'ev, and I. S. Tarasov
pp. 1324-1328
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Photoluminescence Properties of Polycrystalline ZnO/CdS/CuInGaSe2 Solar Cells at a Low Temperature
G. A. Medvedkin, E. I. Terukov, K. Sato, Yu. Hasegava, and K. Hirose
pp. 1329-1334
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Simulation of CurrentVoltage Characteristics of a Ferroelectric Field-Effect Transistor
L. S. Berman
pp. 1335-1339
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Improved Degradation Stability of BlueGreen IIVI Light-Emitting Diodes with Excluded Nitrogen-Doped ZnSe-Based Layers
N. Yu. Gordeev, S. V. Ivanov, V. I. Kopchatov, I. I. Novikov, T. V. Shubina, N. D. Il'inskaya, P. S. Kop'ev, G. Reuscher, A. Waag, and G. Landwehr
pp. 1340-1344
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PERSONALIA
In Memory of Aleksei Petrovich Shotov
Zh. I. Alferov, V. S. Bagaev, B. A. Volkov, A. A. Gippius, A. I. Golovashkin, S. P. Grishechkina, A. I. Demeshina, I. I. Zasavitskii, A. I. Isakov, L. V. Keldysh, Yu. V. Kopaev, B. D. Kopylovskii, O. N. Krokhin, A. I. Nadezhdinskii, I. G. Neizvestnyi, N. A. Penin, Yu. M. Popov, N. N. Sibel'din, V. I. Stafeev, V. A. Chuenkov, V. V. Shestakov, and A. É. Yunovich
pp. 1345-1346
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