Semiconductors -- July 2000

Investigation of Distribution and Redistribution of Silicon in Thin Doped Gallium-Arsenide Layers Grown by Molecular Beam Epitaxy on Substrates with (100), (111)Ga, and (111)As Orientations
G. B. Galiev, V. É. Kaminskii, V. G. Mokerov, V. K. Nevolin, V. V. Saraikin, and Yu. V. Slepnev
pp. 741-745    Full Text: PDF (126 kB)

The Magnetoresistance of Compensated Ge:As at Microwave Frequencies in the Vicinity of the Metal–Insulator Phase Transition
A. I. Veinger, A. G. Zabrodskii, and T. V. Tisnek
pp. 746-754    Full Text: PDF (138 kB)

The Role of Nonequilibrium Carriers in Linear Charge Transport (Ohm's Law)
Yu. G. Gurevich, G. N. Logvinov, G. Espejo, O. Yu. Titov, and A. Meriuts
pp. 755-758    Full Text: PDF (48 kB)

Liquid Phase Reflectivity under Conditions of Laser-Induced Silicon Melting
G. D. Ivlev and E. I. Gatskevich
pp. 759-762    Full Text: PDF (59 kB)

Far Infrared Stimulated and Spontaneous Radiation in Uniaxially Deformed Zero-Gap Hg_1 – xCd_xTe
E. F. Venger, S. G. Gasan-zade, M. V. Strikha, S. V. Staryi, and G. A. Shepel'skii
pp. 763-767    Full Text: PDF (68 kB)

Hysteresis of Magnetoresistance in Neutron-Transmutation-Doped Ge in the Region of Hopping Transport over the Coulomb-Gap States
A. G. Andreev, S. V. Egorov, A. G. Zabrodskii, R. V. Parfen'ev, and A. V. Chernyaev
pp. 768-774    Full Text: PDF (130 kB)

The Role of Impact Ionization in the Formation of Reverse Current–Voltage Characteristics of Al–SiO₂–n-Si Tunnel Structures
M. I. Vexler, I. V. Grekhov, and A. F. Shulekin
pp. 775-780    Full Text: PDF (86 kB)

Photosensitivity of Structures Based on ZnSe Single Crystals
G. A. Il'chuk, V. Yu. Rud', Yu. V. Rud', R. N. Bekimbetov, V. I. Ivanov-Omskii, and N. A. Ukrainets
pp. 781-785    Full Text: PDF (78 kB)

Analysis of Charges and Surface States at the Interfaces of Semiconductor–Insulator–Semiconductor Structures
L. S. Berman, E. I. Belyakova, L. S. Kostina, E. D. Kim, and S. C. Kim
pp. 786-789    Full Text: PDF (55 kB)

Polarization Photosensitivity of a-Si:H/c-Si Heterojunctions
Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 790-793    Full Text: PDF (57 kB)

Photosensitivity of In–SiO₂–Cd_0.28Hg_0.72Te Structures with a Nontransparent Field Electrode
V. N. Ovsyuk, V. V. Vasil'ev, and Yu. P. Mashukov
pp. 794-798    Full Text: PDF (70 kB)

The Hall Effect in Fe Submonolayer Systems on n- and p-type Si(111)
N. G. Galkin, D. L. Goroshko, A. V. Konchenko, E. S. Zakharova, and S. Ts. Krivoshchapov
pp. 799-802    Full Text: PDF (59 kB)

Negative Differential Conductance and the Bloch Oscillations in the Natural Superlattice of 8H Silicon Carbide Polytype
V. I. Sankin and A. A. Lepneva
pp. 803-806    Full Text: PDF (47 kB)

Plasma Oscillations in Two-Dimensional Semiconductor Superstructures
S. Yu. Glazov and S. V. Kryuchkov
pp. 807-809    Full Text: PDF (44 kB)

Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix
V. N. Petrov, N. K. Polyakov, V. A. Egorov, G. E. Cirlin, N. D. Zakharov, P. Werner, V. M. Ustinov, D. V. Denisov, N. N. Ledentsov, and Zh. I. Alferov
pp. 810-814    Full Text: PDF (811 kB)

Impurity Absorption of Light in Confined Systems Subjected to a Longitudinal Magnetic Field
É. P. Sinyavskii and S. M. Sokovnich
pp. 815-816    Full Text: PDF (39 kB)

Charge Carrier Interference in One-Dimensional Semiconductor Rings
N. T. Bagraev, A. D. Buravlev, V. K. Ivanov, L. E. Klyachkin, A. M. Malyarenko, S. A. Rykov, and I. A. Shelykh
pp. 817-824    Full Text: PDF (190 kB)

Simulation of Photochemical Transformations and Photodarkening in Photoresist Films Exposed to Pulsed Vacuum-Ultraviolet Radiation
N. A. Kaliteevskaya and R. P. Seisyan
pp. 825-828    Full Text: PDF (61 kB)

The Influence of Erbium on Electrical and Photoelectric Properties of Amorphous Silicon Produced by Radio-Frequency Silane Decomposition
E. I. Terukov, M. M. Kazanin, O. I. Kon'kov, V. Kh. Kudoyarova, K. V. Kougiya, Yu. A. Nikulin, and A. G. Kazanskii
pp. 829-834    Full Text: PDF (95 kB)

Fringing Field of High-Voltage Planar p–i–n Diodes with a Nonuniformly Doped Guard Ring
A. S. Kyuregyan
pp. 835-843    Full Text: PDF (109 kB)

Study of the Effect of Graded Gap Epilayers on the Performance of Cd_xHg_1 – xTe Photodiodes
V. V. Vasil'ev, D. G. Esaev, A. F. Kravchenko, V. M. Osadchii, and A. O. Suslyakov
pp. 844-847    Full Text: PDF (53 kB)

InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (lambda = 3.0–3.3 µm) for Diode Laser Spectroscopy
M. Aidaraliev, T. Beyer, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
pp. 848-852    Full Text: PDF (80 kB)

Properties of Wide-Mesastripe InGaAsP/InP Lasers
E. G. Golikova, V. A. Kureshov, A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, Yu. A. Ryaboshtan, G. A. Skrynnikov, I. S. Tarasov, and Zh. I. Alferov
pp. 853-856    Full Text: PDF (57 kB)

Zhores Ivanovich Alferov (dedicated to his 70th birthday)

pp. 857-860    Full Text: PDF (159 kB)