Semiconductors -- September 2000
Volume 34, Issue 9,
pp. 983-1102
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Long-Range Effects of Ion Irradiation, Chemical Etching, and Mechanical Grinding on Relaxation of a Solid Solution of Iron in Gallium Phosphide
E. S. Demidov, A. B. Gromoglasova, and V. V. Karzanov
pp. 983-988
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Oxygen-Containing Radiation Defects in Si1 – xGex
Yu. V. Pomozov, M. G. Sosnin, L. I. Khirunenko, V. I. Yashnik, N. V. Abrosimov, W. Schröder, and M. Höhne
pp. 989-993
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Specific Features of the Behavior of Oxygen in Sn-Doped Silicon
Yu. V. Pomozov, M. G. Sosnin, L. I. Khirunenko, and V. I. Yashnik
pp. 994-997
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Early Stages of Oxygen Precipitation in Silicon: The Effect of Hydrogen
V. P. Markevich, L. I. Murin, J. L. Lindström, and M. Suezawa
pp. 998-1003
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Generation of Bulk Defects in Some Semiconductors by Laser Radiation in the Transparency Region of the Crystal
S. V. Plyatsko
pp. 1004-1010
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Electron Mobility and Electron Scattering by Polar Optical Phonons in Heterostructure Quantum Wells
J. Pozela, K. Pozela, and V. Juciene
pp. 1011-1015
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Radiation Defects in n-4H-SiC Irradiated with 8-MeV Protons
A. A. Lebedev, A. I. Veinger, D. V. Davydov, V. V. Kozlovskii, N. S. Savkina, and A. M. Strel'chuk
pp. 1016-1020
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Breakdown of Shallow-Level Donors in Si and Ge on the Insulating Side of a Strain-Induced Metal–Insulator Transition
S. I. Budzulyak, E. F. Venger, Yu. P. Dotsenko, V. N. Ermakov, V. V. Kolomoets, V. F. Machulin, and L. I. Panasyuk
pp. 1021-1023
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Mechanism of High Radiation Stability of Electrical Parameters of SmS Thin Films
L. N. Vasil'ev, V. V. Kaminskii, S. M. Solov'ev, and N. V. Sharenkova
pp. 1024-1026
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Influence of Erbium Ion Implantation Dose on Characteristics of (111) Si:(Er, O) Light-Emitting Diodes Operating in p–n-Junction Breakdown Mode
N. A. Sobolev, A. M. Emel'yanov, and Yu. A. Nikolaev
pp. 1027-1030
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Optical Bistability and Instability in a Semiconductor in the Case Where the Relaxation Time of Free Charge Carriers and Their Equilibrium Concentration are Temperature-Dependent
O. S. Bondarenko, T. M. Lysak, and V. A. Trofimov
pp. 1031-1044
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Generalized Multilayer Model for the Quantitative Analysis of the Electromodulation Components of the Electroreflectance and Photoreflectance Spectra of Semiconductors in the Region of the E0 Fundamental Transition
R. V. Kuz'menko, A. V. Ganzha, É. P. Domashevskaya, V. Kircher, and S. Hildebrandt
pp. 1045-1051
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Thermal EMF in a Bipolar Semiconductor with Phonon Drag of Carriers
A. Konin and R. Raguotis
pp. 1052-1053
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SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Electrical Conductivity of Silicon-on-Insulator Structures Prepared by Bonding Silicon Wafers to a Substrate Using Hydrogen Implantation
I. V. Antonova, V. F. Stas', V. P. Popov, V. I. Obodnikov, and A. K. Gutakovskii
pp. 1054-1057
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Fabrication and Photoelectric Properties of Oxide/CdTe Structures
G. A. Il'chuk, V. I. Ivanov-Omskii, V. Yu. Rud', Yu. V. Rud', R. N. Bekimbetov, and N. A. Ukrainets
pp. 1058-1061
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The Transient Photomagnetic Effect in Multilayer Structures with p–n Junctions
V. N. Agarev and V. I. Stafeev
pp. 1062-1063
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Photovoltaic Effect in a-Si:H/n-InSe Heterostructures
R. N. Bekimbetov, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 1064-1067
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LOW-DIMENSIONAL SYSTEMS
Accumulation of Majority Charge Carriers in GaAs Layers Containing Arsenic Nanoclusters
P. N. Brunkov, V. V. Chaldyshev, A. V. Chernigovskii, A. A. Suvorova, N. A. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
pp. 1068-1072
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Diagnostics of the Hot-Hole Distribution Function in Quantum Wells in a Strong Electric Field
V. Ya. Aleshkin, D. M. Gaponova, V. I. Gavrilenko, Z. F. Krasil'nik, D. G. Revin, B. N. Zvonkov, and E. A. Uskova
pp. 1073-1078
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Size-Quantization Stark Effect in Quasi-Zero-Dimensional Semiconductor Structures
S. I. Pokutnii
pp. 1079-1084
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AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Nanostructured a-Si:H Films Obtained by Silane Decomposition in a Magnetron Chamber
O. A. Golikova, M. M. Kazanin, A. N. Kuznetsov, and E. V. Bogdanova
pp. 1085-1089
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On the Mechanism of Porous Silicon Formation
D. N. Goryachev, L. V. Belyakov, and O. M. Sreseli
pp. 1090-1093
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PHYSICS OF SEMICONDUCTOR DEVICES
Elemental Composition and Electrical Properties of (a-C:H):Cu Films Prepared by Magnetron Sputtering
T. K. Zvonareva, V. M. Lebedev, T. A. Polyanskaya, L. V. Sharonova, and V. I. Ivanov-Omskii
pp. 1094-1099
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Tunable InAsSb/InAsSbP Laser with a Low Radiation Divergence in the p–n-Junction Plane
A. P. Astakhova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, V. V. Sherstnev, and Yu. P. Yakovlev
pp. 1100-1102
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