Semiconductors -- October 2000

Evaluation of Compositional Intermixing at Interfaces in Si(Ge)/Si_1 – xGe_x Heteroepitaxial Structures Grown by Molecular Beam Epitaxy with Combined Sources of Si and GeH₄
L. K. Orlov, N. L. Ivina, and A. V. Potapov
pp. 1103-1108    Full Text: PDF (88 kB)

Hot-Electron Capture by Negatively Charged Centers in an Approximation of Quasi-elastic Scattering
Z. S. Kachlishvili and N. K. Metreveli
pp. 1109-1111    Full Text: PDF (43 kB)

A Verification of the Applicability of the Monovalent-Defect Model to the Description of Properties of the Vacancy–Oxygen Complex in Silicon
L. F. Makarenko
pp. 1112-1115    Full Text: PDF (64 kB)

Space-Charge-Limited Currents in a Synthetic Semiconducting Diamond
Yu. A. Detchuev, V. A. Kryachkov, É. G. Pel', and N. G. Sanzharlinskii
pp. 1116-1119    Full Text: PDF (67 kB)

Optical Properties of Ca₄Ga₂S₇:Eu²⁺
B. G. Tagiev, U. F. Kasumov, N. N. Musaeva, R. B. Dzhabbarov, and A. S. Abushov
pp. 1120-1123    Full Text: PDF (62 kB)

Dielectric Properties of Cd_1 – xFe_xSe Compounds
P. V. Zukowski, J. Partyka, P. Wagierek, Yu. Shostak, Yu. Sidorenko, and A. Rodzik
pp. 1124-1127    Full Text: PDF (79 kB)

Luminescent ZnS:Cu Films Prepared by Chemical Methods
S. V. Svechnikov, L. V. Zav'yalova, N. N. Roshchina, V. E. Rodionov, V. S. Khomchenko, L. I. Berezhinskii, I. V. Prokopenko, P. M. Litvin, O. S. Litvin, Yu. V. Kolomzarov, and Yu. A. Tsyrkunov
pp. 1128-1132    Full Text: PDF (307 kB)

Structural Defects and Deep-Level Centers in 4H-SiC Epilayers Grown by Sublimational Epitaxy in Vacuum
A. A. Lebedev, D. V. Davydov, N. S. Savkina, A. S. Tregubova, M. P. Shcheglov, R. Yakimova, M. Syväjärvi, and E. Janzén
pp. 1133-1136    Full Text: PDF (50 kB)

Special Features of Photoelectric Properties of p-Cd_xHg_1 – xTe Crystals at Low Temperatures: The Effects of the Freezing-Out of Holes and Elastic Stress
S. G. Gasan-Zade, S. V. Staryi, M. V. Strikha, and G. A. Shepel'skii
pp. 1137-1143    Full Text: PDF (82 kB)

Instability of DX-like Impurity Centers in PbTe:Ga at Annealing
D. E. Dolzhenko, V. N. Demin, I. I. Ivanchik, and D. R. Khokhlov
pp. 1144-1146    Full Text: PDF (44 kB)

Effect of Doping with Gadolinium on the Physical Properties of Hg₃In₂Te₆
O. G. Grushka, P. M. Gorlei, A. V. Bestsennyi, and Z. M. Grushka
pp. 1147-1150    Full Text: PDF (64 kB)

Comparison of the Polarizations of the 1.2-eV Photoluminescence Band in n-GaAs:Te under Uniaxial Pressure and Resonance Polarized Excitation
A. A. Gutkin, M. A. Reshchikov, and V. E. Sedov
pp. 1151-1156    Full Text: PDF (85 kB)

Evolution of the Density of States during Phase Transitions in Films of Cadmium Sulfotellurides Synthesized under Profoundly Nonequilibrium Conditions
A. P. Belyaev, V. P. Rubets, and M. Yu. Nuzhdin
pp. 1157-1160    Full Text: PDF (62 kB)

Band Gap Estimation for a Triaminotrinitrobenzene Molecular Crystal by the Density-Functional Method
K. F. Grebenkin and A. L. Kutepov
pp. 1161-1162    Full Text: PDF (22 kB)

Static and High-Frequency Transverse Electrical Conductivity of Isotypical Silicon Structures Obtained by Direct Bonding
V. A. Stuchinskii and G. N. Kamaev
pp. 1163-1171    Full Text: PDF (135 kB)

Influence of an Electric Field on the Strained State of a Heterostructure
R. M. Peleshchak, B. A. Lukiyanets, and G. G. Zegrya
pp. 1172-1176    Full Text: PDF (62 kB)

Effect of Low-Temperature Interphase Charge Transport at the Si/SiO₂ Interface on the Photoresponse of Silicon Barrier Structures
N. I. Bochkareva and S. A. Khorev
pp. 1177-1182    Full Text: PDF (110 kB)

A Study of an Al–Ge₃N₄–Ge Structure by the Method of Photo-Capacitance–Voltage Characteristics
R. B. Dzhanelidze, M. B. Dzhanelidze, and M. R. Katsiashvili
pp. 1183-1185    Full Text: PDF (42 kB)

ZnMgSe/ZnCdSe-Based Distributed Bragg Mirrors Grown by Molecular-Beam Epitaxy on ZnSe Substrates
V. I. Kozlovskii, P. A. Trubenko, Yu. V. Korostelin, and V. V. Roddatis
pp. 1186-1192    Full Text: PDF (381 kB)

On the Theory of Photoionization of Deep-Level Impurity Centers in a Parabolic Quantum Well
V. D. Krevchik, R. V. Zaitsev, and V. V. Evstifeev
pp. 1193-1198    Full Text: PDF (121 kB)

A Model of Conduction in Carbon Nanopipe Bundles and Films
V. É. Kaminskii
pp. 1199-1202    Full Text: PDF (52 kB)

Recombination of Self-Trapped Excitons in Silicon Nanocrystals Grown in Silicon Oxide
K. S. Zhuravlev and A. Yu. Kobitsky
pp. 1203-1206    Full Text: PDF (70 kB)

Anomalous Dispersion, Differential Gain, and Dispersion of the alpha-Factor in InGaAs/AlGaAs/GaAs Strained Quantum-Well Semiconductor Lasers
A. P. Bogatov, A. E. Boltaseva, A. E. Drakin, M. A. Belkin, and V. P. Konyaev
pp. 1207-1213    Full Text: PDF (89 kB)

An Artificially Anisotropic Thermoelectric Material with Semiconducting and Superconducting Layers
D. A. Pshenai-Severin, Yu. I. Ravich, and M. V. Vedernikov
pp. 1214-1218    Full Text: PDF (68 kB)

Injection Currents in Silicon Structures with Blocked Hopping Conduction
D. G. Esaev and S. P. Sinitsa
pp. 1219-1223    Full Text: PDF (65 kB)

Charge Transport Mechanism and Photoelectric Characteristics of n⁺-Si–n-Si–Al₂O₃–Pd Diode Structures
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
pp. 1224-1228    Full Text: PDF (79 kB)