Semiconductors -- November 2000
Volume 34, Issue 11,
pp. 1229-1354
REVIEWS
Silicon–Germanium Nanostructures with Quantum Dots: Formation Mechanisms and Electrical Properties
O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenskii, L. V. Sokolov, A. I. Nikiforov, A. I. Yakimov, and B. Voigtländer
pp. 1229-1247
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ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Internal Microstrain and Distribution of Composition and Cathodoluminescence over Lapped AlxGa1 – xN Epilayers on Sapphire
A. S. Usikov, V. V. Tret'yakov, A. V. Bobyl', R. N. Kyutt, W. V. Lundin, B. V. Pushnyi, and N. M. Shmidt
pp. 1248-1254
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Epitaxial Deposition of InGaAsP Solid Solutions in the Miscibility Gap
L. S. Vavilova, V. A. Kapitonov, A. V. Murashova, and I. S. Tarasov
pp. 1255-1258
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Influence of Heat Treatment on Luminescence of Semi-Insulating Undoped GaAs Crystals
K. D. Glinchuk, N. M. Litovchenko, A. V. Prokhorovich, and O. N. Stril'chuk
pp. 1259-1263
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Basic Principles of Postgrowth Annealing of CdTe:Cl Ingot to Obtain Semi-Insulating Crystals
O. A. Matveev and A. I. Terent'ev
pp. 1264-1269
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A Quasi-Linear Photorefractive Effect in Silicon
A. L. Filatov
pp. 1270-1274
Full Text: PDF (63 kB)
Fabrication and Photoelectronic Properties of ZnTe Single Crystals and Schottky Diodes
G. A. Il'chuk, V. I. Ivanov-Omskii, V. Yu. Rud', Yu. V. Rud', R. N. Bekimbetov, and N. A. Ukrainets
pp. 1275-1280
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Quasi-localized States and Resonance Scattering of Particles by Defects in Semiconductor Crystals with Band Spectrum Structure
S. E. Savotchenko
pp. 1281-1286
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Magneto-Optical Study of Bismuth at 80–280 K
V. M. Grabov, K. G. Ivanov, and A. A. Zaitsev
pp. 1287-1289
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Stimulation of Luminescence in Graded-Gap AlxGa1 – xAs Semiconductors
K. Pozela, R.-A. Bendorius, J. Pozela, and A. Silenas
pp. 1290-1294
Full Text: PDF (72 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photoelectric Properties of Isotype and Anisotype Si/GaN:O Heterojunctions
S. E. Aleksandrov, T. A. Gavrikova, and V. A. Zykov
pp. 1295-1300
Full Text: PDF (90 kB)
Nanorelief of a GaN Surface: the Effect of Sulfide Treatment
V. N. Bessolov, Yu. V. Zhilyaev, E. E. Zavarin, M. E. Kompan, E. V. Konenkova, A. S. Usikov, and V. A. Fedirko
pp. 1301-1304
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The Dislocation Origin and Model of Excess Tunnel Current in GaP p–n Structures
V. V. Evstropov, M. Dzhumaeva, Yu. V. Zhilyaev, N. Nazarov, A. A. Sitnikova, and L. M. Fedorov
pp. 1305-1310
Full Text: PDF (161 kB)
LOW-DIMENSIONAL SYSTEMS
Photoresistance of Si/Ge/Si Structures with Germanium Quantum Dots
O. A. Shegai, K. S. Zhuravlev, V. A. Markov, A. I. Nikiforov, and O. P. Pchelyakov
pp. 1311-1315
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The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3–1.4 µm
B. V. Volovik, D. S. Sizov, A. F. Tsatsul'nikov, Yu. G. Musikhin, N. N. Ledentsov, V. M. Ustinov, V. A. Egorov, V. N. Petrov, N. K. Polyakov, and G. É. Tsyrlin
pp. 1316-1320
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A Nonlinear Theory of Coherent Oscillations in a Resonance-Tunnel Diode in a Wide Frequency Range
V. F. Elesin, I. Yu. Kateev, and A. I. Podlivaev
pp. 1321-1326
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Optical-Absorption Spectra of PbS/C-Based Fibonacci Superlattices with Phonon-Assisted Transitions
S. F. Musikhin, O. V. Rabizo, V. I. Il'in, A. S. Fedorov, and L. V. Sharonova
pp. 1327-1329
Full Text: PDF (38 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Electrical Properties of Hydrogenated Amorphous Ge0.90Si0.1:Hx Films
B. A. Nadzhafov
pp. 1330-1333
Full Text: PDF (61 kB)
Photoresponse and Electroluminescence of Silicon–– Structures
L. V. Belyakov, D. N. Goryachev, and O. M. Sreseli
pp. 1334-1337
Full Text: PDF (56 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Laser Waveguide with a Reverse Gradient of the Refractive Index
E. Yu. Kotel'nikov, I. V. Kudryashov, M. G. Rastegaeva, A. A. Katsnel'son, A. S. Shkol'nik, and V. P. Evtikhiev
pp. 1338-1340
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The Power Density Giving Rise to Optical Degradation of Mirrors in InGaAs/AlGaAs/GaAs-Based Laser Diodes
E. Yu. Kotel'nikov, A. A. Katsnel'son, I. V. Kudryashov, M. G. Rastegaeva, W. Richter, V. P. Evtikhiev, I. S. Tarasov, and Zh. I. Alferov
pp. 1341-1342
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InAsSb/InAsSbP Double-Heterostructure Lasers Emitting at 3–4 µm: Part I
T. N. Danilova, A. N. Imenkov, V. V. Sherstnev, and Yu. P. Yakovlev
pp. 1343-1350
Full Text: PDF (110 kB)
A Coherent Laser Based on a Two-Well Structure
V. F. Elesin and A. V. Tsukanov
pp. 1351-1354
Full Text: PDF (55 kB)