Semiconductors -- December 2000
Volume 34, Issue 12,
pp. 1355-1411
REVIEWS
The Scanning Tunneling Microscopy and Scanning Tunneling Spectroscopy of Amorphous Carbon
V. I. Ivanov-Omskii, A. B. Lodygin, and S. G. Yastrebov
pp. 1355-1362
Full Text: PDF (385 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Influence of Sn Resonance States on the Electrical Homogeneity of Bi2Te3 Single Crystals
M. K. Zhitinskaya, S. A. Nemov, T. E. Svechnikova, P. Reinshaus, and E. Müller
pp. 1363-1364
Full Text: PDF (41 kB)
The In/PbTe Barrier Structures with a Thin Intermediate Insulating Layer
O. A. Aleksandrova, A. T. Akhmedzhanov, R. Ts. Bondokov, V. A. Moshnikov, I. V. Saunin, Yu. M. Tairov, V. I. Shtanov, and L. V. Yashina
pp. 1365-1369
Full Text: PDF (70 kB)
The Formation Kinetics of a Strongly Absorbing State in a Bistable Excitonic Noncavity System
Yu. V. Gudyma
pp. 1370-1375
Full Text: PDF (66 kB)
Photoluminescence of Ga1 – xInxAsySb1 – y Solid Solutions Lattice-Matched to InAs
K. D. Moiseev, A. A. Toropov, Ya. V. Terent'ev, M. P. Mikhailova, and Yu. P. Yakovlev
pp. 1376-1380
Full Text: PDF (98 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Type II Broken-Gap InAs/GaIn0.17As0.22Sb Heterostructures with Abrupt Planar Interface
K. D. Moiseev, A. A. Sitnikova, N. N. Faleev, and Yu. P. Yakovlev
pp. 1381-1385
Full Text: PDF (149 kB)
Special Features of Alpha-Particle Detection with Thin Semi-Insulating 6H-SiC Films
N. B. Strokan, A. A. Lebedev, A. M. Ivanov, D. V. Davydov, and V. V. Kozlovskii
pp. 1386-1390
Full Text: PDF (82 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Vibration Modes of Carbon in Hydrogenated Amorphous Carbon Modified with Copper
V. I. Ivanov-Omskii, T. K. Zvonareva, and G. S. Frolova
pp. 1391-1396
Full Text: PDF (99 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
On the Internal Quantum Efficiency and Carrier Ejection in InGaAsP/InP-based Quantum-Well Lasers
A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, G. V. Skrynnikov, Z. N. Sokolova, I. S. Tarasov, and N. V. Fetisova
pp. 1397-1401
Full Text: PDF (66 kB)
Long-wavelength Light-Emitting Diodes (lambda = 3.4–3.9 µm) Based on InAsSb/InAs Heterostructures Grown by Vapor-Phase Epitaxy
N. V. Zotova, S. S. Kizhaev, S. S. Molchanov, T. B. Popova, and Yu. P. Yakovlev
pp. 1402-1405
Full Text: PDF (59 kB)
Emission-Line Broadening of Current Tunable InAsSbP/InAsSb/InAsSbP Heterostructure Lasers
A. N. Imenkov, N. M. Kolchanova, P. Kubat, S. Civish, and Yu. P. Yakovlev
pp. 1406-1409
Full Text: PDF (60 kB)
IN MEMORIAM
Sergei Petrovich Solov'ev (1932–2000)
V. N. Brudnyi, V. T. Bublik, B. N. Goshitskii, V. V. Emtsev, Yu. A. Kazanskii, R. F. Konopleva, Yu. V. Konobeev, N. G. Kolin, I. I. Kuz'min, M. G. Mil'vidskii, R. P. Ozerov, V. B. Osvenskii, V. G. Plotnikov, A. P. Simonov, L. S. Smirnov, and V. A. Kharchenko
pp. 1410-1411
Full Text: PDF (52 kB)