Semiconductors -- November 1999

Spatially inhomogeneous oxygen precipitation in silicon
S. V. Bulyarskii, V. V. Svetukhin, and O. V. Prikhod'ko
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Enhanced formation of thermal donors in irradiated germanium: local vibrational mode spectroscopy
A. A. Klechko, V. V. Litvinov, V. P. Markevich, and L. I. Murin
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Radiation defects in semiconductors under hydrostatic pressure
V.N. Brudnyi
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Photoconductivity spectral characteristics of semiconductors with exponential fundamental absorption edge
A. I. Vlasenko, Z. K. Vlasenko, and A. V. Lyubchenko
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The electron density of semiconductors with charged dislocations placed in external fields
Z. A. Veliev
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Activation of impurities in ZnSe crystals, stimulated by a laser shock wave
A. Baidullaeva, A. I. Vlasenko, B. L. Gorkovenko, and P. E. Mozol'
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Effects of heavy p doping on the polarized emission spectra and low-temperature luminescence spectra of GaAs/GaAsP strained-layer structures
A. V. Subashiev, Yu. A. Mamaev, B. D. Oskotskii, Yu. P. Yashin, and V. K. Kalevich
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Deep-level transient spectroscopy of radiation-induced levels in 6H-SiC
V. S. Ballandovich
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Physical properties of CdGeAs₂ crystals grown by solid-state synthesis
V. Yu. Rud', Yu. V. Rud', and T. N. Ushakova
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Change in the energy of Jahn–Teller configurations of vacancy–donor complexes induced by uniaxial strain
N. S. Averkiev, A. A. Gutkin, and M. A. Reshchikov
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Using the temperature-dependent photovoltage to investigate porous silicon/silicon structures
E. F. Venger, É. B. Kaganovich, S. I. Kirillova, É. G. Manoilov, V. E. Primachenko, and S. V. Svechnikov
Full Text: PDF (51 kB)

Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers
K. V. Vasilevskii, S. V. Rendakova, I. P. Nikitina, A. I. Babanin, A. N. Andreev, and K. Zekentes
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Effect of low-temperature charge redistributions on the conductivity of surface electron channels at the Si / SiO₂ interface
N. I. Bochkareva and S. A. Khorev
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Statistical delay of microplasma breakdown in GaP p–n junctions
S. V. Bulyarskii, Yu. N. Serëzhkin, and V. K. Ionychev
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On the transformation of the potential barrier at a GaAs/Au interface during heat treatment
B. I. Bednyi
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Absorption of a strong electromagnetic wave by electrons in a superlattice in a quantizing electric field
D. V. Zav'yalov and S. V. Kryuchkov
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X-Ray diffraction analysis of multilayer InAs–GaAs heterostructures with InAs quantum dots
N. N. Faleev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, K. M. Pavlov, V. I. Punegov, M. Tabuchi, and Y. Takeda
Full Text: PDF (536 kB)

Quantum Hall effect in a single-mode wire
Z. D. Kvon, E. B. Ol'shanestkii, M. I. Katkov, A. E. Plotnikov, A. I. Toropov, N. T. Moshegov, M. Casse, and J. C. Portal
Full Text: PDF (38 kB)

Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AlN/Si(111) for application in SAW devices
D. G. Kipshidze, H. P. Schenk, A. Fissel, U. Kaiser, J. Schulze, Wo. Richter, M. Weihnacht, R. Kunze, and J. Kräusslich
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Reversible and irreversible changes in the photoluminescence spectra of porous silicon held in water
B. R. Dzhumaev
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Conductivity and absorption edge of amorphous silicyne
A. I. Mashin and A. F. Khokhlov
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Classification of single-electron devices
I. I. Abramov and E. G. Novik
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Temperature dependence of the gain of lasers based on quantum-dot arrays with an inhomogeneously broadened density of states
A. E. Zhukov, A. R. Kovsh, and V. M. Ustinov
Full Text: PDF (73 kB)