Semiconductors -- December 1999
Volume 33, Issue 12,
pp. 1265-1330
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Distribution of hydrogen in silicon and silicon carbide following high-temperature proton irradiation
V. V. Kozlovskii and V. A. Kozlov
Full Text: PDF (28 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electronic properties of ZnGeP2 crystals obtained by a solid-phase reaction
A. A. Vaipolin, Yu. V. Rud', T. N. Ushakova, and V. Yu. Rud'
Full Text: PDF (61 kB)
Behavior of manganese impurities in Hg3In2Te6
O. G. Grushka, Z. M. Grushka, V. M. Frasunyak, and V. S. Gerasimenko
Full Text: PDF (127 kB)
Photoelectric properties of Hg1–xCdxTe single crystals grown from the vapor phase
S. S. Varshava, I. V. Kurilo, I. S. Virt, and D. I. Tsyutsyura
Full Text: PDF (44 kB)
Nature of the nuclei for thermal donor formation in silicon (or another variant of accelerated oxygen diffusion)
V. B. Neimash, E. A. Puzenko, A. N. Kabaldin, A. N. Kraichinskii, and N. N. Kras'ko
Full Text: PDF (54 kB)
Donor-acceptor photoluminescence of weakly compensated GaN:Mg
V. Yu. Nekrasov, L. V. Belyakov, O. M. Sreseli, and N. N. Zinov'ev
Full Text: PDF (131 kB)
Cascade capture of electrons by dislocations in many-valley semiconductors
Z. A. Veliev
Full Text: PDF (36 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Electrical properties of Hg1–xMnxTe-based photodiodes
L. A. Kosyachenko, I. M. Rarenko, O. A. Bodnaruk, and Sun Weiguo
Full Text: PDF (64 kB)
Drag current for ionization of impurities by an electromagnetic wave in a semiconductor superlattice
M. V. Vyazovskii and G. A. Syrodoev
Full Text: PDF (62 kB)
Position of the Fermi level on an indium arsenide surface treated in sulfur vapor
N. N. Bezryadin, E. A. Tatokhin, A. V. Budanov, A. V. Linnik, and I. N. Arsent'ev
Full Text: PDF (33 kB)
LOW-DIMENSIONAL SYSTEMS
Effect of anisotropy of band structure on optical gain in spherical quantum dots based on PbS and PbSe
A. D. Andreev and A. A. Lipovskii
Full Text: PDF (76 kB)
Superradiance in semiconductors
S. V. Zaitsev, L. A. Graham, D. L. Huffaker, N. Yu. Gordeev, V. I. Kopchatov, L. Ya. Karachinsky, I. I. Novikov, and P. S. Kop'ev
Full Text: PDF (80 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Effect of gamma irradiation on the photoluminescence kinetics of porous silicon
V. F. Agekyan, Yu. A. Stepanov, V. V. Emtsev, A. A. Lebedev, D. S. Poloskin, and A. D. Remenyuk
Full Text: PDF (42 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Photodetectors based on osmium-doped silicon
M. S. Yunusov, R. A. Muminov, G. Nurkuziev, N. Gapparov, and A. Kholboev
Full Text: PDF (27 kB)
Effect of liquid dielectrics on the efficiency of silicon solar cells
Yu. A. Abramyan, G. G. Karamyan, A. A. Murodyan, V. I. Stafeev, and V. I. Serago
Full Text: PDF (31 kB)
Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 µm
A. P. Danilova, A. N. Imenkov, N. M. Kolchanova, V. V. Sherstnev, Yu. P. Yakovlev, and S. Civis
Full Text: PDF (84 kB)
Nonpolarizing radiation detectors based on wide-gap semiconductor crystals
P. G. Kasherininov, A. N. Lodygin, S. S. Martynov, and V. S. Khrunov
Full Text: PDF (41 kB)