Semiconductors -- February 2000
Volume 34, Issue 2,
pp. 123-249
REVIEW
Modification of Semiconductors with Proton Beams. A Review
V. V. Kozlovskii, V. A. Kozlov, and V. N. Lomasov
pp. 123-140
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ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Electronic Properties of Variably Charged Defects in Crystalline Semiconductors
A. N. Kraichinskii, L. I. Shpinar, and I. I. Yaskovets
pp. 141-145
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electrical Properties of InP Irradiated with Fast Neutrons in a Nuclear Reactor
N. G. Kolin, D. I. Merkurisov, and S. P. Solov'ev
pp. 146-149
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Electrical Properties of Transmutation-Doped Indium Phosphide
N. G. Kolin, D. I. Merkurisov, and S. P. Solov'ev
pp. 150-154
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Thermal Acceptors in Irradiated Silicon
V. F. Stas', I. V. Antonova, E. P. Neustroev, V. P. Popov, and L. S. Smirnov
pp. 155-160
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Influence of Au and Pt on the Concentration Profile of Mn in Si
G. S. Kulikov and Sh. A. Yusupova
pp. 161-162
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Variation in Resistance of a Nitrogen-Enriched Silicon Layer as a Result of the Long-Range Effect of Ion Implantation
E. S. Demidov, V. V. Karzanov, and K. A. Markov
pp. 163-165
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Contribution of the Electron Subsystem of Crystal into Reactions between Multicharge Centers in Semiconductors
N. I. Boyarkina and A. V. Vasil'ev
pp. 166-170
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Control of the Excitation Conditions and the Parameters of Self-Sustained Oscillations of Current in Compensated Silicon Doped with Manganese
M. K. Bakhadyrkhanov, Kh. Azimkhuzhaev, N. F. Zikrillaev, A. B. Sabdullaev, and É. Arzikulov
pp. 171-173
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SEMICONDUCTORS STRUCTURES, INTERFACES, AND SURFACES
Reconstruction Transition (4 × 2) [long right-arrow] (2 × 4) on the (001) Surfaces of InAs and GaAs
Yu. G. Galitsyn, S. P. Moshchenko, and A. S. Suranov
pp. 174-180
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Physicochemical Properties of the Surface and Near-Surface Region of Epitaxial n-GaAs Layers Modified by Atomic Hydrogen
N. A. Torkhov and S. V. Eremeev
pp. 181-188
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Magnetotransport in a Semimetal Channel in p-Ga1 – xInxAsySb1 – y / p-InAs Heterostructures with Various Compositions of the Solid Solution
T. I. Voronina, T. S. Lagunova, M. P. Mikhailova, K. D. Moiseev, A. E. Rozov, and Yu. P. Yakovlev
pp. 189-194
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LOW-DIMENSIONAL SYSTEMS
Thermal Annealing of Defects in InGaAs/GaAs Heterostructures with Three-Dimensional Islands
M. M. Sobolev, I. V. Kochnev, V. M. Lantratov, N. A. Bert, N. A. Cherkashin, N. N. Ledentsov, and D. A. Bedarev
pp. 195-204
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On the Constriction of the Hall Current in the Corbino Disk under Quantum Hall Effect Conditions
V. B. Shikin and Yu. V. Shikina
pp. 205-212
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AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
The Effect of Ultrafast Low-Temperature Doping of Vitreous As–Se Films with Copper, Silver, Gold, and Chromium (The Khan Effect)
M. A. Korzhuev
pp. 213-216
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Scanning Tunneling Microscopy of Films of Amorphous Carbon Doped with Copper
A. O. Golubok, O. M. Gorbenko, T. K. Zvonareva, S. A. Masalov, V. V. Rozanov, S. G. Yastrebov, and V. I. Ivanov-Omskii
pp. 217-220
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Mechanisms of Transport and Injection of Carriers into a Porous Silicon: Electroluminescence in Electrolytes
D. N. Goryachev, G. Polisskii, and O. M. Sreseli
pp. 221-227
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PHYSICS OF SEMICONDUCTOR DEVICES
Quantum-Mechanical Features of the Field Effect in Heterotransistors with Modulation- and delta-Doped Regions
V. A. Gergel', V. G. Mokerov, and M. V. Timofeev
pp. 228-232
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Ultraquasi-Hydrodynamic Electron Transport in Submicrometer Field Effect MIS Transistors and Heterotransistors
V. A. Gergel', V. G. Mokerov, M. V. Timofeev, and Yu. V. Fedorov
pp. 233-236
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Single-Mode InAsSb/InAsSbP Laser (lambda [approximate] 3.2 µm) Tunable over 100 Å
A. P. Danilova, A. N. Imenkov, N. M. Kolchanova, S. Civis, V. V. Sherstnev, and Yu. P. Yakovlev
pp. 237-242
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6H-SiC Epilayers as Nuclear Particle Detectors
A. A. Lebedev, N. S. Savkina, A. M. Ivanov, N. B. Strokan, and D. V. Davydov
pp. 243-249
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