Semiconductors -- April 2000
Volume 34, Issue 4,
pp. 371-494
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Thermodynamics of Complex Formation and Defect Clustering in Semiconductors
S. V. Bulyarskii, V. V. Svetukhin, and P. E. L'vov
pp. 371-375
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Highly Efficient n-(Bi, Sb)2Te3 Thermoelectric Materials for Temperatures Below 200 K
V. A. Kutasov, L. N. Luk'yanova, and P. P. Konstantinov
pp. 376-380
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Tunneling Spectroscopy of Impurity Atoms in a Single-Crystal Semiconductor Matrix
A. V. Kartavykh, N. S. Maslova, V. I. Panov, V. V. Rakov, and S. V. Savinov
pp. 381-385
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Saturation of Interband Absorption in Semiconductors
A. O. Melikyan and G. R. Minasyan
pp. 386-388
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Scattering of Phonons by a Spatially Correlated System of Fe Atoms and the Low-Temperature Anomaly of Thermal Conductivity in HgSe:Fe Crystals
I. G. Kuleev, A. T. Lonchakov, and I. Yu. Arapova
pp. 389-397
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Activation-Controlled Conduction and MetalInsulator Transition in the Impurity Band of Narrow-Gap p-Hg1 xCdxTe Doped Crystals
V. V. Bogoboyashchii, S. G. Gasan-zade, and G. A. Shepel'skii
pp. 398-404
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Cathodoluminescence and Raman Scattering in Ga1 xAlxP Epitaxial Films
L. K. Vodop'yanov, V. I. Kozlovskii, and N. N. Mel'nik
pp. 405-409
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Participation of the Electron Subsystem of a Crystal in the Reactions of Defect-Complex Decomposition in Semiconductors
N. I. Boyarkina
pp. 410-414
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Bandgap and Intrinsic Carrier Concentration in HgCdMnTe and HgCdZnTe
O. A. Bodnaruk, A. V. Markov, S. É. Ostapov, I. M. Rarenko, and A. F. Slonetskii
pp. 415-417
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Fission of Longitudinal Autosolitons in InSb in a Magnetic Field
I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev
pp. 418-421
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Nonlinearity of Acoustic Effects and High-Frequency Electrical Conductivity in GaAs/AlGaAs Heterostructures under Conditions of the Integer Quantum Hall Effect
I. L. Drichko, A. M. D'yakonov, I. Yu. Smirnov, and A. I. Toropov
pp. 422-428
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Variation in the Defect Structure of p-CdTe Single Crystals at the Passage of the Laser Shock Wave
A. Baidullaeva, A. I. Vlasenko, B. L. Gorkovenko, A. V. Lomovtsev, and P. E. Mozol'
pp. 429-432
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Optical Spectra and Electronic Structure of Cubic Silicon Carbide
V. V. Sobolev and A. N. Shestakov
pp. 433-437
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SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
On the Theory of Anomalous Photovoltage in Multilayer Structures with pn Junctions
V. N. Agarev and N. A. Stepanova
pp. 438-440
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Equilibrium Distributions of Shallow-Level Impurity and Potential in the Near-Surface Region of a Semiconductor in a Model with a Completely Depleted Layer
V. V. Gavrilovets, V. B. Bondarenko, Yu. A. Kudinov, and V. V. Korablev
pp. 441-444
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LOW-DIMENSIONAL SYSTEMS
On the Static Conductivity of a Disordered Quantum System with the Mirror Symmetry
A. G. Moiseev
pp. 445-447
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A Numerical Calculation of Auger Recombination Coefficients for InGaAsP/InP Quantum Well Heterostructures
N. A. Gun'ko, A. S. Polkovnikov, and G. G. Zegrya
pp. 448-452
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Recombination Emission from InAs Quantum Dots Grown on Vicinal GaAs Surfaces
V. G. Talalaev, B. V. Novikov, S. Yu. Verbin, A. B. Novikov, Dinh Son Thath, I. V. Shchur, G. Gobsch, R. Goldhahn, N. Stein, A. Golombek, G. É. Tsyrlin, V. N. Petrov, V. M. Ustinov, A. E. Zhukov, and A. Yu. Egorov
pp. 453-461
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Charge Carrier Interference in Modulated Quantum Wires
N. T. Bagraev, W. Gehlhoff, V. K. Ivanov, L. E. Klyachkin, A. M. Malyarenko, and I. A. Shelykh
pp. 462-472
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Dependence of the Energy Spectrum of a Strained ZnSe/ZnS Superlattice on the Charge-Carrier Concentration
R. M. Peleshchak and B. A. Lukiyanets
pp. 473-476
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AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Structure and Properties of a-Si:H Films Grown by Cyclic Deposition
V. P. Afanas'ev, A. S. Gudovskikh, O. I. Kon'kov, M. M. Kazanin, K. V. Kougiya, A. P. Sazanov, I. N. Trapeznikova, and E. I. Terukov
pp. 477-480
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PHYSICS OF SEMICONDUCTOR DEVICES
Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots
I. L. Krestnikov, A. V. Sakharov, W. V. Lundin, Yu. G. Musikhin, A. P. Kartashova, A. S. Usikov, A. F. Tsatsul'nikov, N. N. Ledentsov, Zh. I. Alferov, I. P. Soshnikov, E. Hahn, B. Neubauer, A. Rosenauer, D. Litvinov, D. Gerthsen, A. C. Plaut, A. A. Hoffmann, and D. Bimberg
pp. 481-487
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Spectral Characteristics of Lasers Based on InGaAsSb/InAsSbP Double Heterostructures (lambda = 3.03.6 µm)
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', G. N. Talalakin, T. Beyer, and R. Brunner
pp. 488-492
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IN MEMORIAM
Aleksandr Aleksandrovich Rogachev
pp. 493-494
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