Semiconductors -- May 2000
Volume 34, Issue 5,
pp. 495-613
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Interaction between Copper and Antimony in a Solid Solution Based on Germanium with the Formation of a Charged Complex
V. M. Glazov and A. Ya. Potemkin
pp. 495-501
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Special Features of the Sublimational Molecular-Beam Epitaxy of Si and Its Potentialities for Growing Si:Er/Si Structures
V. P. Kuznetsov and R. A. Rubtsova
pp. 502-509
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The Influence of Electrically Inactive Impurities on the Formation of Donor Centers in Silicon Layers Implanted with Erbium
O. V. Aleksandrov, A. O. Zakhar'in, N. A. Sobolev, and Yu. A. Nikolaev
pp. 510-513
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Carbon-Stimulated Increase in the Concentration of Gallium Divacancies in Semi-Insulating Undoped GaAs Crystals
K. D. Glinchuk, N. M. Litovchenko, A. V. Prokhorovich, and O. N. Stril'chuk
pp. 514-516
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Effect of Diffusion Length and Surface Recombination on the Photopleochroism of Anisotropic Crystals
G. A. Medvedkin
pp. 517-520
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Effect of Diffusion Length and Surface Recombination on the Polarization Quantum Efficiency of Anisotropic Crystals
G. A. Medvedkin
pp. 521-524
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Thermoelectric Power of the n-InSb in a Transverse Quantizing Magnetic Field at a Large Temperature Gradient
M. M. Gadzhialiev
pp. 525-526
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Influence of Annealing on the Dislocation-Related Electrical Conductivity of Germanium
S. A. Shevchenko
pp. 527-533
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Optical Spectroscopy of Excitonic States in CuInSe2
A. V. Mudryi, M. V. Yakushev, R. D. Tomlinson, A. E. Hill, R. D. Pilkington, I. V. Bodnar', I. A. Viktorov, V. F. Gremenok, I. A. Shakin, and A. I. Patuk
pp. 534-537
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Effect of Uniaxial Deformation on Electrophysical Parameters of 6H-SiC p–n Structures
A. A. Lebedev
pp. 538-540
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Deep-Level Centers in Undoped p-GaAs Layers Grown by Liquid Phase Epitaxy
L. S. Berman, V. G. Danil'chenko, V. I. Korol'kov, and F. Yu. Soldatenkov
pp. 541-544
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SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photocapacitance Effect in a Monopolar Metal–Insulator–Semiconductor Capacitor at Low Temperatures
N. A. Penin
pp. 545-549
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Conditions for Negative Differential Resistance and Switching in a Tunnel Diode under the Effect of an External Microwave Signal
D. A. Usanov, A. V. Skripal', N. V. Ugryumova, S. B. Venig, and V. E. Orlov
pp. 550-554
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Hot Carrier Electromotive Force Caused by Surface Potential Modulation in a Strong Microwave Field
G. Gulyamov, M. G. Dadamirzaev, and S. R. Boidedaev
pp. 555-557
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Photosensitivity of Thin-Film Structures Based on (CuInSe2)x(2ZnSe)1 – x Solid Solutions
V. Yu. Rud', Yu. V. Rud', R. N. Bekimbetov, V. F. Gremenok, I. V. Bodnar', and L. V. Rusak
pp. 558-562
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LOW-DIMENSIONAL SYSTEMS
Shallow Acceptors in Strained Ge/Ge1 – xSix Heterostructures with Quantum Wells
V. Ya. Aleshkin, B. A. Andreev, V. I. Gavrilenko, I. V. Erofeeva, D. V. Kozlov, and O. A. Kuznetsov
pp. 563-567
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Exciton Energy States and Photoluminescence Spectra of the Strained-Layer ZnS–ZnSe Superlattices
N. V. Bondar', V. V. Tishchenko, and M. S. Brodin
pp. 568-574
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Zero-Phonon and Dipole Gamma–X Electron Transitions in GaAs/AlAs Quantum-Well Heterostructures in a Longitudinal Electric Field
V. Ya. Aleshkin and A. A. Andronov
pp. 575-582
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On the Spectra of Electrons and Holes in an Open Spherical Nanoheterostructure (through the Example of GaAs/AlxGa1 – xAs/GaAs)
N. V. Tkach, V. A. Holovatsky, and O. N. Voitsekhivska
pp. 583-588
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Study of Decay of Elastically Strained Germanium Film at the Silicon Surface
I. V. Zakurdaev, M. V. Baizer, S. Yu. Sadof'ev, and M. M. Rzaev
pp. 589-593
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Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 µm Wavelength Range
N. A. Maleev, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, D. A. Bedarev, B. V. Volovik, I. L. Krestnikov, I. N. Kayander, V. A. Odnoblyudov, A. A. Suvorova, A. F. Tsatsul'nikov, Yu. M. Shernyakov, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
pp. 594-597
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AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Current–Voltage Characteristics of Electroluminescent Me/(a-Si:H):Er/c-Si Structures Prepared by Magnetron Sputtering
P. A. Ivanov, O. I. Kon'kov, and E. I. Terukov
pp. 598-602
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Charge-Carrier Transport in a Double-Collector Magnetotransistor
M. A. Glauberman, V. V. Kozel, and A. V. Nakhabin
pp. 603-605
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PHYSICS OF SEMICONDUCTOR DEVICES
A Method for Modulation of the Charge-Carrier Mobility in a Semiconductor
V. V. Novikov, R. R. Vardanyan, and É. E. Pakhomov
pp. 606-608
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Power Conversion Efficiency of Quantum Dot Laser Diodes
A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, N. A. Maleev, V. A. Odnoblyudov, V. M. Ustinov, Yu. M. Shernyakov, E. Yu. Kondrat'eva, D. A. Livshits, I. S. Tarasov, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
pp. 609-613
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