Semiconductors -- June 2000

Investigation of the Influence of External Effects on the Behavior of Gold Impurity in Silicon
S. Z. Zainabidinov, O. O. Mamatkarimov, I. G. Tursunov, and U. A. Tuichiev
pp. 615-617    Full Text: PDF (42 kB)

Internal Friction Related to Changes in the Shape of Small Inclusions
Yu. N. Andreev, B. M. Darinskii, V. A. Moshnikov, D. S. Saiko, and N. P. Yaroslavtsev
pp. 618-620    Full Text: PDF (41 kB)

Specifics of MOCVD Formation of In_xGa_1 – xN Inclusions in a GaN Matrix
I. P. Soshnikov, V. V. Lundin, A. S. Usikov, I. P. Kalmykova, N. N. Ledentsov, A. Rosenauer, B. Neubauer, and D. Gerthsen
pp. 621-625    Full Text: PDF (200 kB)

Interband Emission of Cadmium Thiogallate
A. I. Machuga, V. F. Zhitar', and E. D. Arama
pp. 626-628    Full Text: PDF (39 kB)

Redistribution of Phosphorus Implanted into Silicon Doped Heavily with Boron
E. G. Tishkovskii, V. I. Obodnikov, A. A. Taskin, K. V. Feklistov, and V. G. Seryapin
pp. 629-633    Full Text: PDF (64 kB)

Multiphonon Capture of Charge Carriers by Deep-Level Centers in a Depletion Region of a Semiconductor
M. A. Dem'yanenko, V. N. Ovsyuk, and V. V. Shashkin
pp. 634-640    Full Text: PDF (97 kB)

Temperature Dependences of Electrical Properties of n-type PbSe Single-Crystalline Films Subjected to alpha-Particle Bombardment
Ya. P. Salii and R. Ya. Salii
pp. 641-643    Full Text: PDF (45 kB)

Charge Carrier Mobility in n-Cd_xHg_1 – xTe Crystals Subjected to Dynamic Ultrasonic Stressing
A. I. Vlasenko, Ya. M. Olikh, and R. K. Savkina
pp. 644-649    Full Text: PDF (86 kB)

On the Origin of the Thermal–Field Asymmetry in Ionic Polarization/Depolarization of Oxide in Si-MOS Structures
E. I. Gol'dman, A. G. Zhdan, and G. V. Chucheva
pp. 650-654    Full Text: PDF (77 kB)

Equilibrium Energy Distribution of Localized Carriers in Disordered Semiconductors Subjected to an External Electric Field at Low Temperature
D. V. Nikolaenkov, V. I. Arkhipov, and V. R. Nikitenko
pp. 655-657    Full Text: PDF (40 kB)

Photoelectric Phenomena in a-Si:H/p-CuInSe₂ Heterostructures
Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 658-661    Full Text: PDF (63 kB)

Thermoelectric and Photoelectric Properties of the p–n CuInSe₂/CdS Heterostructures Obtained by the Quasi-Equilibrium Deposition Method
M.-R. A. Magomedov, Sh. M. Ismailov, Dzh. Kh. Magomedova, and P. P. Khokhlachev
pp. 662-664    Full Text: PDF (50 kB)

Critical Voltage Growth Rate when Initiating the Ultrafast Impact Ionization Front in a Diode Structure
A. M. Minarskii and P. B. Rodin
pp. 665-667    Full Text: PDF (48 kB)

Special Features of Generation–Recombination Processes in the p–n Junctions Based on HgMnTe
L. A. Kosyachenko, S. É. Ostapov, and Sun Weiguo
pp. 668-670    Full Text: PDF (48 kB)

Influence of SiO₂ Protective Films on the Diffusion of Atomic Hydrogen during the Hydrogenation of Epitaxial n-GaAs
A. V. Panin and N. A. Torkhov
pp. 671-676    Full Text: PDF (457 kB)

Photosensitivity of a-Si:H/n-InSe Heterocontacts
Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 677-679    Full Text: PDF (54 kB)

Surface Magnetoplasma Waves in a Ferromagnetic Semiconductor and their Excitation by a Magnetic Dipole
V. L. Fal'ko, S. I. Khankina, and V. M. Yakovenko
pp. 680-685    Full Text: PDF (75 kB)

Reflection Coefficient of a Semiconductor Superlattice Subjected to a Magnetic Field
A. A. Bulgakov and O. V. Shramkova
pp. 686-692    Full Text: PDF (96 kB)

Low-Temperature Photoluminescence and X-ray Diffractometry Study of In_xGa_1 – xAs Quantum Wells
S. V. Evstigneev, R. M. Imamov, A. A. Lomov, Yu. G. Sadof'ev, Yu. V. Khabarov, M. A. Chuev, and D. S. Shipitsin
pp. 693-699    Full Text: PDF (93 kB)

Self-Ordered Microcavities Embedded in Ultrashallow Silicon p–n Junctions
N. T. Bagraev, A. D. Buravlev, L. E. Klyachkin, A. M. Malyarenko, and S. A. Rykov
pp. 700-711    Full Text: PDF (652 kB)

Ballistic Conductance of a Quantum Wire at Finite Temperatures
N. T. Bagraev, V. K. Ivanov, L. E. Klyachkin, A. M. Malyarenko, and I. A. Shelykh
pp. 712-716    Full Text: PDF (65 kB)

Kinetics of Light-Induced Degradation in a-Si:H Films Investigated by Computer Simulation
M. N. Meytin, M. Zeman, B. G. Budaguan, and J. W. Metselaar
pp. 717-722    Full Text: PDF (92 kB)

The Staebler–Wronski Effect and Temperature Dependences of Photoconductivity in p-type a-Si:H
S. V. Kuznetsov
pp. 723-727    Full Text: PDF (83 kB)

Modification of Optoelectronic Properties of Porous Silicon Produced in an Electrolyte Based on Heavy Water
B. V. Kamenev, E. A. Konstantinova, P. K. Kashkarov, and V. Yu. Timoshenko
pp. 728-731    Full Text: PDF (231 kB)

Optical and Electrical Properties of Porous Gallium Arsenide
N. S. Averkiev, L. P. Kazakova, É. A. Lebedev, Yu. V. Rud', A. N. Smirnov, and N. N. Smirnova
pp. 732-736    Full Text: PDF (79 kB)

Effect of Nanocrystalline Inclusions on the Photosensitivity of Amorphous Hydrogenated Silicon Films
O. A. Golikova and M. M. Kazanin
pp. 737-740    Full Text: PDF (60 kB)