Semiconductors -- February 2001
Volume 35, Issue 2,
pp. 125-241
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Study of Photoluminescence of SiOxNy Films Implanted with Ge+ Ions and Annealed under the Conditions of Hydrostatic Pressure
I. E. Tyschenko, K. S. Zhuravlev, E. N. Vandyshev, A. Misiuk, R. A. Yankov, L. Rebohle, and W. Skorupa
pp. 125-131
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Quasi-Local Impurity States in Uniaxially Compressed p-Type Ge
A. A. Abramov, V. N. Tulupenko, and D. A. Firsov
pp. 132-134
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The Effect of Stress Fields Produced by Growth Defects on the Dielectric Photoresponse of Cd1 xZnxTe Crystals
I. A. Klimenko, V. K. Komar', V. P. Migal', and D. P. Nalivaiko
pp. 135-137
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Nickel Impurity Excitons and Photoinduced Lattice Distortion in ZnSe1 ySy:Ni and Zn1 xCdxSe:Ni Solid Solutions
V. I. Sokolov and V. N. Starovoitova
pp. 138-143
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The Edge Ultraviolet Luminescence of GaN:Zn Films Activated in a Nitrogen Plasma
A. N. Georgobiani, A. N. Gruzintsev, U. A. Aminov, M. O. Vorob'ev, and I. I. Khodos
pp. 144-148
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Reflection Spectra of Doped BismuthAntimony Crystals in the Far-Infrared Region of the Spectrum
V. M. Grabov and N. P. Stepanov
pp. 149-152
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The Effect of High-Temperature Epitaxial SiC Layer Growth on the Structure of Porous Silicon Carbide
N. S. Savkina, V. V. Ratnikov, and V. B. Shuman
pp. 153-157
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Hopping Transport in Doped (Pb0.78Sn0.22)1 xInxTe Solid Solutions
Yu. I. Ravich and S. A. Nemov
pp. 158-163
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The Spread of Cross Section for Electron Capture by a Trap with a Discrete Energy Level in gamma-La2S3 Crystals
E. M. Zobov and M. A. Rizakhanov
pp. 164-169
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Photoluminescence of CuGaTeAs and CuGaSnGa Complexes in n-GaAs under Resonance Polarized Excitation
N. S. Averkiev, A. A. Gutkin, and V. E. Sedov
pp. 170-174
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Electrical Conductivity of n-InSb Films in Strong Electric Fields
Yu. A. Nikol'skii and S. E. Zyuzin
pp. 175-176
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Surface Gettering of Background Impurities and Defects in GaAs Wafers
L. S. Vlasenko, A. T. Gorelenok, V. V. Emtsev, A. V. Kamanin, D. S. Poloskin, and N. M. Shmidt
pp. 177-180
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SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Mechanism of Reverse Current in the Al/p-InP Schottky Diodes
P. A. Pipinys, A. K. Rimeika, V. A. Lapeika, and A. V. Pipiniene
pp. 181-184
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Quasi-Static Ion Currents in Thin Insulating Films of MetalInsulatorSemiconductor Structures and the Distribution of Ions in the Films
S. G. Dmitriev and Yu. V. Markin
pp. 185-192
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Simulation of Hysteresis in a MetalFerroelectricSemiconductor Structure
L. S. Berman
pp. 193-195
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Investigation of a Change in the Chemical Composition of the Surface of CdxHg1 xTe Samples as a Result of Treatment by N2O and H2 Gases Activated in a High-Frequency Discharge
V. V. Vasil'ev, T. I. Zakhar'yash, V. G. Kesler, I. O. Parm, and A. P. Solov'ev
pp. 196-198
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Tunneling via Impurity States Related to the X Valley in a Thin AlAs Barrier
Yu. N. Khanin, K. S. Novoselov, and E. E. Vdovin
pp. 199-203
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Spectra of the Field and Current Oscillations in Superlattices Exposed to Terahertz Laser Radiation
Yu. A. Romanov and Yu. Yu. Romanova
pp. 204-208
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Investigation of the SiC/(SiC)1 x(AlN)x Heterostructures by the Method of CapacitanceVoltage Characteristics
M. K. Kurbanov, B. A. Bilalov, Sh. A. Nurmagomedov, and G. K. Safaraliev
pp. 209-211
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LOW-DIMENSIONAL SYSTEMS
Electron Localization and Bloch Oscillations in Quantum-Dot Superlattices under a Constant Electric Field
I. A. Dmitriev and R. A. Suris
pp. 212-219
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AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Optical Properties of Amorphous Carbon Films Deposited by Magnetron Sputtering of Graphite
V. I. Ivanov-Omskii, A. V. Tolmatchev, and S. G. Yastrebov
pp. 220-225
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Contrast Enhancement in Image Transfer via Interaction of UV Radiation with Inorganic Photoresist Films
N. A. Kaliteevskaya and R. P. Seisyan
pp. 226-229
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Investigation of Surface Morphology of Copper-Modified Amorphous Carbon Films
T. K. Zvonareva, V. I. Ivanov-Omskii, S. G. Yastrebov, A. O. Golubok, O. M. Gorbenko, and V. V. Rozanov
pp. 230-234
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Optical Study of InP Quantum Dots
D. A. Vinokurov, V. A. Kapitonov, D. N. Nikolaev, Z. N. Sokolova, and I. S. Tarasov
pp. 235-237
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PHYSICS OF SEMICONDUCTOR DEVICES
High-Power High-Voltage Bipolar Transistors Based on Complex Semiconductor Structures
M. Yu. Volokobinskii, I. N. Komarov, T. V. Matyukhina, V. I. Reshetnikov, A. A. Rush, I. V. Falina, and A. S. Yastrebov
pp. 238-241
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