Semiconductors -- March 2001

Electrical and Optical Properties of Pristine and Polymerized Fullerenes
T. L. Makarova
pp. 243-278    Full Text: PDF (791 kB)

Heteroepitaxy of II–VI Compound Semiconductors on Cooled Substrates
A. P. Belyaev and V. P. Rubets
pp. 279-282    Full Text: PDF (107 kB)

Molecular-Dynamics Simulation of Structural Properties of Ge_1 – xSn_x Substitutional Solid Solutions
V. G. Deibuk and Yu. G. Korolyuk
pp. 283-286    Full Text: PDF (60 kB)

Low-Temperature Diffusion of Indium into Germanium Assisted by Atomic Hydrogen
V. M. Matyushin
pp. 287-290    Full Text: PDF (51 kB)

A New Magnetic Semiconductor Cd_1 – xMn_xGeP₂
G. A. Medvedkin, T. Ishibashi, T. Nishi, and K. Sato
pp. 291-294    Full Text: PDF (133 kB)

Temperature Dependence of a Magnetoresistance Effect in the Films of Ferromagnetic Semiconductors Based on Oxides of Rare-Earth Elements
V. F. Kabanov, S. A. Karasev, and Ya. G. Fedorenko
pp. 295-297    Full Text: PDF (44 kB)

Specific Features of the Nonequilibrium Distribution Function for Electron Scattering by Polar Optical Phonons in III–V Semiconductors
S. I. Borisenko
pp. 298-301    Full Text: PDF (60 kB)

On the Stabilization of Electrical Properties of Compensated Silicon as a Result of Irradiation with ⁶⁰Co Gamma-Ray Quanta
M. S. Yunusov, M. Karimov, and M. A. Dzhalelov
pp. 302-305    Full Text: PDF (54 kB)

Generation–Recombination Processes in Semiconductors
I. N. Volovichev and Yu. G. Gurevich
pp. 306-315    Full Text: PDF (99 kB)

Capacitance–Voltage Characteristics of p–n Structures Based on (111)Si Doped with Erbium and Oxygen
A. M. Emel'yanov, N. A. Sobolev, and A. N. Yakimenko
pp. 316-320    Full Text: PDF (75 kB)

Negative Luminescence in p-InAsSbP/n-InAs Diodes
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
pp. 321-324    Full Text: PDF (78 kB)

Characterization of Electroluminescent Structures Based on Gallium Arsenide Ion-Implanted with Ytterbium and Oxygen
D. W. Palmer, V. A. Dravin, V. M. Konnov, E. A. Bobrova, N. N. Loiko, S. G. Chernook, and A. A. Gippius
pp. 325-330    Full Text: PDF (73 kB)

Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties
T. I. Voronina, B. E. Zhurtanov, T. S. Lagunova, M. P. Mikhailova, K. D. Moiseev, A. E. Rozov, and Yu. P. Yakovlev
pp. 331-337    Full Text: PDF (102 kB)

Extension of the Frequency Range of the Noise Spectral Density in Silicon p–n Structures Irradiated with Gamma-Ray Quanta
O. K. Baranovskii, P. V. Kuchinskii, V. M. Lutkovskii, A. P. Petrunin, and E. D. Savenok
pp. 338-342    Full Text: PDF (75 kB)

Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing
L. V. Asryan and R. A. Suris
pp. 343-346    Full Text: PDF (61 kB)

Composition Analysis of Coherent Nanoinsertions of Solid Solutions on the Basis of High-Resolution Electron Micrographs
I. P. Soshnikov, O. M. Gorbenko, A. O. Golubok, and N. N. Ledentsov
pp. 347-352    Full Text: PDF (615 kB)

Electrical and Photoelectric Properties of a-Si:H Layered Films: The Influence of Thermal Annealing
I. A. Kurova, N. N. Ormont, E. I. Terukov, I. N. Trapeznikova, V. P. Afanas'ev, and A. S. Gudovskikh
pp. 353-356    Full Text: PDF (68 kB)

Optically Pumped Mid-Infrared InGaAs(Sb) LEDs
N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', G. N. Talalakin, and V. V. Shustov
pp. 357-359    Full Text: PDF (56 kB)

Current-Tunable Lasers with a Narrow Emission Line Operating at 3.3 µm
A. N. Imenkov, N. M. Kolchanova, P. Kubat, K. D. Moiseev, C. Civis, and Yu. P. Yakovlev
pp. 360-364    Full Text: PDF (63 kB)

Record Power Characteristics of InGaAs/AlGaAs/GaAs Heterostructure Lasers
D. A. Livshits, A. Yu. Egorov, I. V. Kochnev^[dagger], V. A. Kapitonov, V. M. Lantratov, N. N. Ledentsov, T. A. Nalyot, and I. S. Tarasov
pp. 365-369    Full Text: PDF (66 kB)