Semiconductors -- April 2001

The Effect of Various Types of Shallow Impurities and Their Concentration on Microhardness and Photomechanical Properties of Semiconductors
A. B. Gerasimov and G. D. Chiradze
pp. 371-373    Full Text: PDF (39 kB)

Laser Beam Epitaxy of HgCdTe/Si Heterostructures
S. V. Plyatsko and N. N. Bergush
pp. 374-376    Full Text: PDF (53 kB)

Emission from Hot Charge Carriers during the Formation of High-Field Autosolitons in Electron–Hole Plasma in n-Ge
M. N. Vinoslavskii and A. V. Kravchenko
pp. 377-383    Full Text: PDF (105 kB)

An Analysis of the Shape of a Luminescence Band Induced by Transitions of Free Electrons to Carbon Atoms in Semi-Insulating Undoped GaAs Crystals
K. D. Glinchuk, N. M. Litovchenko, A. V. Prokhorovich, and O. N. Stril'chuk
pp. 384-390    Full Text: PDF (112 kB)

Relaxation Features of the Dielectric Response of Cd_1 – xZn_xTe Crystals Grown from the Melt
I. A. Klimenko, V. K. Komar', V. P. Migal', and D. P. Nalivaiko
pp. 391-393    Full Text: PDF (53 kB)

Semiempirical Model of Carrier Mobility in Silicon Carbide for Analyzing Its Dependence on Temperature and Doping Level
T. T. Mnatsakanov, L. I. Pomortseva, and S. N. Yurkov
pp. 394-397    Full Text: PDF (50 kB)

Dipole Moments of Ligands and Stark Splitting of Levels of Rare-Earth Ions
M. M. Chumachkova and A. B. Roitsin^[dagger]
pp. 398-404    Full Text: PDF (83 kB)

Mechanisms of Incorporation of an Antimony Impurity into Cadmium Telluride Crystals
E. S. Nikonyuk, Z. I. Zakharuk, V. L. Shlyakhovyi, P. M. Fochuk, and A. I. Rarenko
pp. 405-408    Full Text: PDF (73 kB)

A Study of the Electrical and Optical Properties of Si Delta-Doped GaAs Layers Grown by MBE on a (111)A GaAs Surface Misoriented toward the [21-bar 1-bar ] Direction
G. B. Galiev, V. G. Mokerov, É. R. Lyapin, V. V. Saraikin, and Yu. V. Khabarov
pp. 409-414    Full Text: PDF (267 kB)

The Use of the Amphoteric Nature of Impurity Silicon Atoms for Obtaining Planar p–n Junctions on GaAs (111)A Substrates by Molecular Beam Epitaxy
G. B. Galiev, V. É. Kaminskii, V. G. Mokerov, and L. É. Velikhovskii
pp. 415-418    Full Text: PDF (178 kB)

Structural, Luminescent, and Transport Properties of Hybrid AlAsSb/InAs/Cd(Mg)Se Heterostructures Grown by Molecular Beam Epitaxy
V. A. Solov'ev, I. V. Sedova, A. A. Toropov, Ya. V. Terent'ev, S. V. Sorokin, B. Ya. Mel'tser, S. V. Ivanov, and P. S. Kop'ev
pp. 419-423    Full Text: PDF (143 kB)

Interface States and Capacitance–Voltage Characteristics of n-SnO₂:Ni/p-Si Heterostructures under Gas-Adsorption Conditions
R. B. Vasil'ev, A. M. Gas'kov, M. N. Rumyantseva, L. I. Ryabova, and B. A. Akimov
pp. 424-426    Full Text: PDF (54 kB)

The Transition Layer in TiB₂–GaAs and Au–TiB₂–GaAs Schottky Contacts
E. F. Venger, R. V. Konakova, O. B. Okhrimenko, S. Yu. Sapko, L. V. Shekhovtsov, and V. N. Ivanov
pp. 427-432    Full Text: PDF (79 kB)

Hot-Hole Lateral Transport in a Two-Dimensional GaAs/Al_0.3Ga_0.7As Structure
Yu. L. Ivanov, I. V. Elizarov, V. M. Ustinov, and A. E. Zhukov
pp. 433-435    Full Text: PDF (48 kB)

Conductance of Quasi-Two-Dimensional Semiconductor Systems with Electrostatic Disorder in the Region of the Percolation Metal–Insulator Transition
B. A. Aronzon, D. A. Bakaushin, A. S. Vedeneev, A. B. Davydov, E. Z. Meilikhov, and N. K. Chumakov
pp. 436-443    Full Text: PDF (128 kB)

Plasma Oscillations in Two-Dimensional Semiconductor Superstructures in the Presence of a High Electric Field
S. Yu. Glazov and S. V. Kryuchkov
pp. 444-446    Full Text: PDF (46 kB)

Magnetic-Field-Induced Transitions between Minibands in GaAs/Al_xGa_1 – xAs Superlattices
V. F. Sapega, D. N. Mirlin, T. Ruf, M. Cardona, W. Winter, and K. Eberl
pp. 447-450    Full Text: PDF (58 kB)

The Effect of Pulsed Laser Annealing on the Parameters of Cd_xHg_1 – xTe Photoresistors
V. N. Ryzhkov, M. I. Ibragimova, and N. S. Baryshev
pp. 451-452    Full Text: PDF (37 kB)

Photodiodes for a 1.5–4.8 µm Spectral Range Based on Type-II GaSb/InGaAsSb Heterostructures
N. D. Stoyanov, M. P. Mikhailova, O. V. Andreichuk, K. D. Moiseev, I. A. Andreev, M. A. Afrailov, and Yu. P. Yakovlev
pp. 453-458    Full Text: PDF (98 kB)

Photoelectric Characteristics of Infrared Photodetectors with Blocked Hopping Conduction
D. G. Esaev and S. P. Sinitsa
pp. 459-463    Full Text: PDF (64 kB)

Suppression of Current by Light in p-Si–n⁺-ZnO–n-ZnO–Pd Diode Structures
S. V. Slobodchikov, Kh. M. Salikhov, E. V. Russu, and Yu. G. Malinin
pp. 464-467    Full Text: PDF (55 kB)

A Study of Deep Traps at the SiO₂/6H-SiC Interface Relying upon the Nonequilibrium Field Effect
P. A. Ivanov, T. P. Samsonova, V. N. Panteleev, and D. Yu. Polyakov
pp. 468-473    Full Text: PDF (85 kB)

Consideration of the "Island" Background Charge in Single-Electron Transistor Simulation
I. I. Abramov and E. G. Novik
pp. 474-476    Full Text: PDF (40 kB)

The Effect of Dislocations Formed during Growth on the Structure and Photoluminescence of i–n^––n–n⁺-GaAs Epilayers and on the Related Microwave Transistors Parameters
M. P. Lisitsa, F. V. Motsnyi, V. F. Motsnyi, and I. V. Prokopenko
pp. 477-480    Full Text: PDF (151 kB)

Radiation Hardness of SiC Ion Detectors under Relativistic Protons
A. M. Ivanov, N. B. Strokan, D. V. Davydov, N. S. Savkina, A. A. Lebedev, Yu. T. Mironov, G. A. Ryabov, and E. M. Ivanov
pp. 481-484    Full Text: PDF (55 kB)

The Thermal Cross-Interference Effects in the Arrays of Vertical-Cavity Surface-Emitting Lasers
S. M. Zakharov
pp. 485-489    Full Text: PDF (69 kB)