Semiconductors -- May 2001

Oscillatory "Reactions" Involving the Oxygen and Carbon Background Impurities in Silicon Undergoing Heat Treatment
V. V. Lukjanitsa
pp. 491-498    Full Text: PDF (114 kB)

Thermal Conductivity and the Wiedemann–Franz Relation in Melts of Indium and Gallium Antimonides
Ya. B. Magomedov and A. R. Bilalov
pp. 499-501    Full Text: PDF (43 kB)

Specific Features of Photoconductivity in Thin n-PbTe:Ga Epilayers
B. A. Akimov, V. A. Bogoyavlenskii, L. I. Ryabova, and V. N. Vasil'kov
pp. 502-505    Full Text: PDF (61 kB)

Dynamic Effect of a Constant Electric Field on the Kinetics of Photons Interacting with Electrons in a Semiconductor
R. Kh. Amirov and V. N. Gusyatnikov
pp. 506-511    Full Text: PDF (142 kB)

Studies of the Infrared Luminescence of ZnSe Doped with Copper and Oxygen
N. K. Morozova, I. A. Karetnikov, V. V. Blinov, and E. M. Gavrishchuk
pp. 512-515    Full Text: PDF (51 kB)

On the Origin of the Luminescence Band with hnu_m = 1.5133 eV in Gallium Arsenide
K. D. Glinchuk, N. M. Litovchenko, A. V. Prokhorovich, and O. N. Stril'chuk
pp. 516-519    Full Text: PDF (62 kB)

BeCdSe: A New Material for the Active Region in Devices Operating in the Blue–Green Region of the Spectrum
O. V. Nekrutkina, S. V. Sorokin, V. A. Kaigorodov, A. A. Sitnikova, T. V. Shubina, A. A. Toropov, S. V. Ivanov, P. S. Kop'ev, G. Reuscher, V. Wagner, J. Geurts, A. Waag, and G. Landwehr
pp. 520-524    Full Text: PDF (95 kB)

Method for Determining the Stoichiometric Composition of a Mercury Cadmium Telluride Solid Solution from Capacitance–Voltage Characteristics
I. M. Ivankiv, A. M. Yafyasov, V. B. Bogevol'nov, and A. D. Perepelkin
pp. 525-528    Full Text: PDF (51 kB)

Mechanism of the Current Flow in Pd–(Heavily Doped p-Al_xGa_1 – xN) Ohmic Contact
T. V. Blank, Yu. A. Goldberg, E. V. Kalinina, O. V. Konstantinov, A. E. Nikolaev, A. V. Fomin, and A. E. Cherenkov
pp. 529-532    Full Text: PDF (60 kB)

Thermodynamic Analysis of the Growth of GaAsN Ternary Compounds by Molecular Beam Epitaxy
V. A. Odnoblyudov, A. R. Kovsh, A. E. Zhukov, N. A. Maleev, E. S. Semenova, and V. M. Ustinov
pp. 533-538    Full Text: PDF (67 kB)

An Analysis of the Charge-Transport Mechanisms Defining the Reverse Current–Voltage Characteristics of the Metal–GaAs Barriers
S. V. Bulyarskii and A. V. Zhukov
pp. 539-542    Full Text: PDF (67 kB)

Photoelectric Spectroscopy of InAs/GaAs Quantum Dot Heterostructures in a Semiconductor/Electrolyte System
I. A. Karpovich, A. P. Gorshkov, S. B. Levichev, S. V. Morozov, B. N. Zvonkov, and D. O. Filatov
pp. 543-549    Full Text: PDF (104 kB)

Manifestation of the Upper Hubbard Band in the Electrical Conductivity of Two-Dimensional p-GaAs–AlGaAs Structures
N. V. Agrinskaya, Yu. L. Ivanov, V. M. Ustinov, and D. A. Poloskin
pp. 550-553    Full Text: PDF (61 kB)

Superlattice Conductivity under the Action of a Nonlinear Electromagnetic Wave
D. V. Zav'yalov and S. V. Kryuchkov
pp. 554-556    Full Text: PDF (42 kB)

Nonlinear Interaction of Waves in a Semiconductor Superlattice
A. A. Bulgakov and O. V. Shramkova
pp. 557-564    Full Text: PDF (97 kB)

The Distribution Function of Hot Charge Carriers under Conditions of Resonance Scattering
A. A. Prokof'ev, M. A. Odnoblyudov, and I. N. Yassievich
pp. 565-572    Full Text: PDF (102 kB)

Electron Transport in Silicon Carbide Natural Superlattices under the Wannier–Stark Quantization Conditions: Basic Issues and Application Prospects
V. I. Sankin and P. P. Shkrebii
pp. 573-578    Full Text: PDF (129 kB)

Silicon Network in a-Si:H Films Containing Ordered Inclusions
O. A. Golikova, E. V. Bogdanova, M. M. Kazanin, A. N. Kuznetsov, V. A. Terekhov, V. M. Kashkarov, and O. V. Ostapenko
pp. 579-582    Full Text: PDF (61 kB)

Excitation of Luminescence in Porous Silicon with Adsorbed Ozone Molecules
S. N. Kuznetsov, V. B. Pikulev, A. A. Saren, Yu. E. Gardin, and V. A. Gurtov
pp. 583-587    Full Text: PDF (66 kB)

Drift Mobility of Carriers in Porous Silicon
N. S. Averkiev, L. P. Kazakova, É. A. Lebedev, and N. N. Smirnova
pp. 588-590    Full Text: PDF (39 kB)

The Effect of Bombardment with Carbon Ions on the Nanostructure of Diamond-like Films
I. A. Faizrakhmanov, V. V. Bazarov, V. A. Zhikharev, and I. B. Khaibullin
pp. 591-597    Full Text: PDF (93 kB)

Light Emitting Diodes for the Spectral Range lambda = 3.3–4.3 µm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20–180°C (Part 2¹)
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
pp. 598-604    Full Text: PDF (106 kB)

A New Structure of the CdS-Based Surface-Barrier Ultraviolet Sensor
S. Yu. Pavelets, Yu. N. Bobrenko, A. V. Komashchenko, and T. E. Shengeliya
pp. 605-607    Full Text: PDF (56 kB)

Impact Ionization Wave Breakdown of Drift Step Recovery Diodes
V. A. Kozlov, A. F. Kardo-Sysoev, and V. I. Brylevskii
pp. 608-611    Full Text: PDF (58 kB)