Semiconductors -- July 2001

Doping of Semiconductors Using Radiation Defects Produced by Irradiation with Protons and Alpha Particles
V. A. Kozlov and V. V. Kozlovski
pp. 735-761    Full Text: PDF (280 kB)

The Microstructure and Physical Properties of Thin SnO₂ Films
S. I. Rembeza, T. V. Svistova, E. S. Rembeza, and O. I. Borsyakova
pp. 762-765    Full Text: PDF (233 kB)

The Accuracy of Reconstructing the Semiconductor Doping Profile from Capacitance–Voltage Characteristics Measured during Electrochemical Etching
I. R. Karetnikova, I. M. Nefedov, and V. I. Shashkin
pp. 766-772    Full Text: PDF (83 kB)

Optical Properties of Cd_1 – xZn_xTe (0 < x < 0.1) Single Crystals in the Infrared Spectral Region
A. I. Belogorokhov, V. M. Lakeenkov^[dagger], and L. I. Belogorokhova
pp. 773-776    Full Text: PDF (54 kB)

Metallic Conductivity over an Acceptor Band of Lightly Compensated Copper-Doped p-Hg_0.78Cd_0.22Te Crystals
V. V. Bogoboyashchii
pp. 777-783    Full Text: PDF (93 kB)

Fermi Level Pinning and Electrical Properties of Irradiated Cd_xHg_1 – xTe Alloys
V. N. Brudnyi and S. N. Grinyaev
pp. 784-787    Full Text: PDF (55 kB)

Effect of Ballistic Electron Transport in Metal–n-GaAs–n⁺-GaAs Schottky-Barrier Structures
N. A. Torkhov
pp. 788-795    Full Text: PDF (102 kB)

Calculation of the Variation in the Work Function Caused by Adsorption of Metal Atoms on Semiconductors
S. Yu. Davydov and A. V. Pavlyk
pp. 796-799    Full Text: PDF (45 kB)

Charge Transport in HgCdTe-based n⁺–p Photodiodes
J. V. Gumenjuk-Sichevskaja, F. F. Sizov, V. N. Ovsyuk, V. V. Vasil'ev, and D. G. Esaev
pp. 800-806    Full Text: PDF (96 kB)

Electronic State Mixing in X_x and X_y Valleys in AlAs/GaAs (001)
G. F. Karavaev and V. N. Chernyshov
pp. 807-815    Full Text: PDF (110 kB)

Adsorption-based Porosimetry Using Capacitance Measurements
E. A. Tutov, A. Yu. Andryukov, and E. N. Bormontov
pp. 816-820    Full Text: PDF (53 kB)

Structural Transformations and Silicon Nanocrystallite Formation in SiO_x Films
V. Ya. Bratus', V. A. Yukhimchuk, L. I. Berezhinsky, M. Ya. Valakh, I. P. Vorona, I. Z. Indutnyi, T. T. Petrenko, P. E. Shepeliavyi, and I. B. Yanchuk
pp. 821-826    Full Text: PDF (96 kB)

Luminescence Spectra and Efficiency of GaN-based Quantum-Well Heterostructure Light Emitting Diodes: Current and Voltage Dependence
V. E. Kudryashov, S. S. Mamakin, A. N. Turkin, A. É. Yunovich, A. N. Kovalev, and F. I. Manyakhin
pp. 827-834    Full Text: PDF (133 kB)

Interaction of Metal Nanoparticles with a Semiconductor in Surface-Doped Gas Sensors
S. V. Ryabtsev, E. A. Tutov, E. N. Bormontov, A. V. Shaposhnik, and A. V. Ivanov
pp. 835-839    Full Text: PDF (59 kB)

Cross-Sectional Electrostatic Force Microscopy of Semiconductor Laser Diodes
A. V. Ankudinov, E. Yu. Kotel'nikov, A. A. Kantsel'son, V. P. Evtikhiev, and A. N. Titkov
pp. 840-846    Full Text: PDF (371 kB)

Comparative Analysis of Long-Wavelength (1.3 µm) VCSELs on GaAs Substrates
N. A. Maleev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, A. P. Vasil'ev, V. M. Ustinov, N. N. Ledentsov, and Zh. I. Alferov
pp. 847-853    Full Text: PDF (91 kB)

1.3 µm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them
A. V. Sakharov, I. L. Krestnikov, N. A. Maleev, A. R. Kovsh, A. E. Zhukov, A. F. Tsatsul'nikov, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, J. A. Lott, and Zh. I. Alferov
pp. 854-859    Full Text: PDF (97 kB)