Semiconductors -- August 2001

Growth of Fractal Lithium Clusters in Germanium
S. V. Bulyarskii, V. V. Svetukhin, O. V. Agafonova, A. G. Grishin, and P. A. Il'in
pp. 861-863    Full Text: PDF (49 kB)

Vibration Modes of Oxygen Dimers in Germanium
V. V. Litvinov, L. I. Murin, L. Lindström, V. P. Markevich, and A. A. Klechko
pp. 864-869    Full Text: PDF (105 kB)

Effect of Deviations from Stoichiometry on Electrical Conductivity and Photoconductivity of CuInSe₂ Crystals
M. A. Abdullaev, Dz. Kh. Magomedova, R. M. Gadzhieva, E. I. Terukov, Yu. A. Nikolaev, Yu. V. Rud', and P. P. Khokhlachev
pp. 870-872    Full Text: PDF (61 kB)

The Onset of Double Limiting Cycle in the Impurity-Assisted Electric Breakdown of a Compensated Semiconductor with a Shorted Hall Voltage
K. M. Jandieri and Z. S. Kachlishvili
pp. 873-876    Full Text: PDF (56 kB)

Preparation and Properties of Isotopically Pure Polycrystalline Silicon
O. N. Godisov, A. K. Kaliteevskii, V. I. Korolev, B. Ya. Ber, V. Yu. Davydov, M. A. Kaliteevskii, and P. S. Kop'ev
pp. 877-879    Full Text: PDF (46 kB)

Electrical Properties of Cd_xHg_1 – xTe/CdZnTe Heterostructures
A. G. Belov, A. I. Belogorokhov, and V. M. Lakeenkov
pp. 880-882    Full Text: PDF (44 kB)

Native and Impurity Defects in ZnSe:In Single Crystals Prepared by Free Growth
Yu. F. Vaksman, Yu. A. Nitsuk, Yu. N. Purtov, and P. V. Shapkin
pp. 883-889    Full Text: PDF (88 kB)

Origin of an Absorption Band Peaked at 5560 cm^–1 and Related to Divacancies in Si_1 – xGe_x
Yu. V. Pomozov, M. G. Sosnin, L. I. Khirunenko, N. V. Abrosimov, and W. Schröder
pp. 890-894    Full Text: PDF (71 kB)

Photoluminescence Kinetics in GaAs under the Influence of Surface Acoustic Waves
K. S. Zhuravlev, A. M. Gilinskii, A. V. Tsarev, and A. E. Nikolaenko
pp. 895-899    Full Text: PDF (71 kB)

Optical Band Gap of Cd_1 – xMn_xTe and Zn_1 – xMn_xTe Semiconductors
P. V. Zhukovskii, Ya. Partyka, P. Vengerek, Yu. V. Sidorenko, Yu. A. Shostak, and A. Rodzik
pp. 900-903    Full Text: PDF (64 kB)

The Role of Lead in Growing Ga_1 – XIn_XAs_YSb_1 – Y Solid Solutions by Liquid-Phase Epitaxy
T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, D. A. Vasyukov, and Yu. P. Yakovlev
pp. 904-911    Full Text: PDF (105 kB)

Interface States and Deep-Level Centers in Silicon-on-Insulator Structures
I. V. Antonova, J. Stano, D. V. Nikolaev, O. V. Naumova, V. P. Popov, and V. A. Skuratov
pp. 912-917    Full Text: PDF (80 kB)

Simultaneous Doping of Silicon Layers with Erbium and Oxygen in the Course of Molecular-Beam Epitaxy
V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, G. A. Maksimov, Z. F. Krasil'nik, B. A. Andreev, M. V. Stepikhova, D. V. Shengurov, L. Palmetshofer, and H. Ellmer
pp. 918-923    Full Text: PDF (147 kB)

Pulsed Laser-Stimulated Surface Acoustic Waves in p-CdTe Crystals
A. Baidullaeva, A. I. Vlasenko, É. I. Kuznetsov, A. V. Lomovtsev, P. E. Mozol', and A. B. Smirnov
pp. 924-926    Full Text: PDF (194 kB)

Analysis of Inherent Potential Nonuniformities at the Extrinsic-Semiconductor Surface
V. B. Bondarenko, M. V. Kuz'min, and V. V. Korablev
pp. 927-931    Full Text: PDF (65 kB)

Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As–GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy
N. N. Faleev, Yu. G. Musikhin, A. A. Suvorova, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, M. Tabuchi, and Y. Takeda
pp. 932-940    Full Text: PDF (238 kB)

Optical Properties of Germanium Monolayers on Silicon
T. M. Burbaev, T. N. Zavaritskaya, V. A. Kurbatov, N. N. Mel'nik, V. A. Tsvetkov, K. S. Zhuravlev, V. A. Markov, and A. I. Nikiforov
pp. 941-946    Full Text: PDF (75 kB)

The Effect of External Factors on Photoelectric Parameters of Amorphous Hydrogenated Silicon in Relation to the Initial Characteristics of the Films
N. Rakhimov, U. Babakhodzhaev, Kh. Mavlyanov, and R. Ikramov
pp. 947-948    Full Text: PDF (38 kB)

Anomalous Polarization of Raman Scattering by Transverse and Longitudinal Phonons in Porous Doped GaAs
V. N. Denisov, B. N. Mavrin, and V. A. Karavanskii
pp. 949-952    Full Text: PDF (61 kB)

Effect of Temperature on Photoconductivity and Its Decay in Microcrystalline Silicon
A. G. Kazanskii, H. Mell, E. I. Terukov, and P. A. Forsh
pp. 953-955    Full Text: PDF (54 kB)

X-ray Spectroscopic Study of Electronic Structure of Amorphous Silicon and Silicyne
A. I. Mashin, A. F. Khokhlov, É. P. Domashevskaya, V. A. Terekhov, and N. I. Mashin
pp. 956-961    Full Text: PDF (161 kB)

Threshold Characteristics of lambda = 1.55 µm InGaAsP/InP Heterolasers
G. G. Zegrya, N. A. Pikhtin, G. V. Skrynnikov, S. O. Slipchenko, and I. S. Tarasov
pp. 962-969    Full Text: PDF (96 kB)

An Ionization-Type Si:S-Based Semiconductor Converter of Infrared Images with Sensitivity in the Spectral Range of CO₂-Laser Radiation
V. T. Tulanov, Kh. B. Siyabekov, A. Sh. Davletova, and K. A. Ortaeva
pp. 970-973    Full Text: PDF (51 kB)

A Study of Technological Processes in the Production of High-Power High-Voltage Bipolar Transistors Incorporating an Array of Inclusions in the Collector Region
N. I. Volokobinskaya, I. N. Komarov, T. V. Matyukhina, V. I. Reshetnikov, A. A. Rush, I. V. Falina, and A. S. Yastrebov
pp. 974-978    Full Text: PDF (404 kB)

Erratum: "Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing" [Semiconductors 35 (3), 343 (2001)]
L. V. Asryan and R. A. Suris
p. 979    Full Text: PDF (6 kB)