Semiconductors -- September 2001

THIS ISSUE IS DEDICATED TO THE MEMORY OF ANATOLI VASIL'EVICH RZHANOV (1920–2000)

A Scientist, a Mentor, a Soldier
I. G. Neizvestnyi
pp. 981-984    Full Text: PDF (92 kB)

Atomic Processes in Semiconductor Crystals
L. S. Smirnov
pp. 985-987    Full Text: PDF (30 kB)

Investigation of Ge Film Growth on the Si(100) Surface by Recording Diffractometry
A. I. Nikiforov, V. A. Cherepanov, and O. P. Pchelyakov
pp. 988-991    Full Text: PDF (154 kB)

A Study of Galvanomagnetic Phenomena in MBE-Grown n-Cd_xHg_1 – xTe Films
V. S. Varavin, A. F. Kravchenko, and Yu. G. Sidorov
pp. 992-996    Full Text: PDF (65 kB)

Numerical Simulation of Intrinsic Defects in SiO₂ and Si₃N₄
V. A. Gritsenko, Yu. N. Novikov, A. V. Shaposhnikov, and Yu. N. Morokov
pp. 997-1005    Full Text: PDF (271 kB)

Oxidation of Semiconductors and the Constitution of Interfaces
S. M. Repinskii
pp. 1006-1017    Full Text: PDF (159 kB)

Diffusion of Cu over a Clean Si(111) Surface
A. E. Dolbak, R. A. Zhachuk, and B. Z. Olshanetsky
pp. 1018-1021    Full Text: PDF (50 kB)

The Simulation of Epitaxy, Sublimation, and Annealing Processes in a 3D Silicon Surface Layer
A. V. Zverev, I. G. Neizvestnyi, N. L. Shvarts, and Z. Sh. Yanovitskaya
pp. 1022-1029    Full Text: PDF (242 kB)

Properties of Silicon-on-Insulator Structures and Devices
V. P. Popov, A. I. Antonova, A. A. Frantsuzov, L. N. Safronov, G. N. Feofanov, O. V. Naumova, and D. V. Kilanov
pp. 1030-1037    Full Text: PDF (198 kB)

In situ Study of the Interaction of Oxygen with the Si(111) Surface by Ultrahigh-Vacuum Reflection Electron Microscopy
S. S. Kosolobov, A. L. Aseev, and A. V. Latyshev
pp. 1038-1044    Full Text: PDF (439 kB)

Molecular-Beam Epitaxy of Mercury–Cadmium–Telluride Solid Solutions on Alternative Substrates
Yu. G. Sidorov, S. A. Dvoretskii, V. S. Varavin, N. N. Mikhailov, M. V. Yakushev, and I. V. Sabinina
pp. 1045-1053    Full Text: PDF (103 kB)

Epitaxial Growth, Electronic Properties, and Photocathode Applications of Strained Pseudomorphic InGaAsP/GaAs Layers
V. L. Alperovich, Yu. B. Bolkhovityanov, S. I. Chikichev, A. G. Paulish, A. S. Terekhov, and A. S. Yaroshevich
pp. 1054-1062    Full Text: PDF (123 kB)

Electronic Properties of InAs-Based Metal–Insulator–Semiconductor (MIS) Structures
G. L. Kuryshev, A. P. Kovchavtsev, and N. A. Valisheva
pp. 1063-1071    Full Text: PDF (131 kB)

Recombination of Point Defects and Their Interaction with the Surface in the Course of the Clusterization of these Defects in Si
L. I. Fedina
pp. 1072-1080    Full Text: PDF (420 kB)

Spin Response of 2D Electrons to a Lateral Electric Field
L. I. Magarill, A. V. Chaplik, and M. V. Éntin
pp. 1081-1087    Full Text: PDF (276 kB)

Germanium Quantum Dots in an Unstrained GaAs/ZnSe/Ge/ZnSe Heterosystem
I. G. Neizvestnyi, S. P. Suprun, A. B. Talochkin, V. N. Shumsky, and A. V. Efanov
pp. 1088-1094    Full Text: PDF (258 kB)

Type-II Ge/Si Quantum Dots
A. V. Dvurechenskii and A. I. Yakimov
pp. 1095-1105    Full Text: PDF (137 kB)

Switching Characteristics of Electron-Irradiated MOS-Controlled Thyristors
E. V. Chernyavskii, V. P. Popov, Yu. S. Pakhmutov, Yu. I. Krasnikov, and L. N. Safronov
pp. 1106-1109    Full Text: PDF (154 kB)

Arrays of 128 × 128 Photodetectors Based on HgCdTe Layers and Multilayer Heterostructures with GaAs/AlGaAs Quantum Wells
V. N. Ovsyuk, Yu. G. Sidorov, V. V. Vasil'ev, and V. V. Shashkin
pp. 1110-1116    Full Text: PDF (252 kB)