Semiconductors -- December 2001
Volume 35, Issue 12,
pp. 1347-1417
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Paramagnetic Defects in Silicon Carbide Crystals Irradiated with Gamma-Ray Quanta
I. V. Ilyin, E. N. Mokhov, and P. G. Baranov
pp. 1347-1354
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Interaction of Hydrogen with Radiation Defects in p-Si Crystals
O. V. Feklisova, N. A. Yarykin, E. B. Yakimov, and J. Weber
pp. 1355-1360
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Electrical Properties of the Proton-Irradiated Semi-Insulating GaAs:Cr
V. N. Brudnyi and A. I. Potapov
pp. 1361-1365
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Dynamics of Nonequilibrium Gratings Induced in Silicon Films by Femtosecond Laser Pulses
M. F. Galyautdinov, V. S. Lobkov, S. A. Moiseev, and I. V. Negrashov
pp. 1366-1368
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Radiative Recombination via Direct Optical Transitions in In1 – xGaxAs (0 <= x <= 0.16) Solid Solutions
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
pp. 1369-1371
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Effect of Structural Imperfection on the Spectrum of Deep Levels in 6H-SiC
A. A. Lebedev, D. V. Davydov, A. S. Tregubova, E. V. Bogdanova, M. P. Shcheglov, and M. V. Pavlenko
pp. 1372-1374
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SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
The Contact of Metal with Silicon Carbide: Schottky Barrier Height in Relation to SiC Polytype
S. Yu. Davydov, A. A. Lebedev, O. V. Posrednik, and Yu. M. Tairov
pp. 1375-1377
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LOW-DIMENSIONAL SYSTEMS
Ostwald Ripening of Quantum-Dot Nanostructures
R. D. Vengrenovich, Yu. V. Gudyma, and S. V. Yarema
pp. 1378-1382
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Kinetics of Exciton Photoluminescence in Low-Dimensional Silicon Structures
A. V. Sachenko, É. B. Kaganovich, É. G. Manoilov, and S. V. Svechnikov
pp. 1383-1389
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Renormalization of Energy Spectrum of Quantum Dots under Vibrational Resonance Conditions
A. V. Fedorov, A. V. Baranov, A. Itoh, and Y. Masumoto
pp. 1390-1397
Full Text: PDF (111 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Scanning Tunneling Spectroscopy of a-C:H and a-C:(H, Cu) Films Prepared by Magnetron Sputtering
T. K. Zvonareva, V. I. Ivanov-Omskii, V. V. Rozanov, and L. V. Sharonova
pp. 1398-1403
Full Text: PDF (78 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
InAsSb/InAsSbP Double-Heterostructure Lasers Emitting in the 3–4 µm Spectral Range
T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, and Yu. P. Yakovlev
pp. 1404-1417
Full Text: PDF (183 kB)