Semiconductors -- March 2002

Clustering of Defects and Impurities in Hydrogenated Single-Crystal Silicon
Kh. A. Abdulin, Yu. V. Gorelkinskii, B. N. Mukashev, and S. Zh. Tokmoldin
pp. 239-249    Full Text: PDF (141 kB)

Rapid Thermal Annealing of Gallium Arsenide Implanted with Sulfur Ions
V. M. Ardyshev and M. V. Ardyshev
pp. 250-253    Full Text: PDF (45 kB)

The Preexponential Factor in Mott's Law for Variable-Range-Hopping Conduction in Lightly Compensated p-Hg_0.8Cd_0.2Te Crystals
V. V. Bogoboyashchii
pp. 254-258    Full Text: PDF (81 kB)

E₀ Photoreflectance Spectra of GaAs: Identification of the Features Related to Impurity Transitions
R. V. Kusmenko and É. P. Domashevskaya
pp. 259-262    Full Text: PDF (53 kB)

Temperature Dependence of Thermoelectric Power in n-InSb in a Transverse Quantizing Magnetic Field
M. M. Gadzhialiev
pp. 263-264    Full Text: PDF (38 kB)

Effect of Annealing in Oxygen Radicals on Luminescence and Electrical Conductivity of ZnO:N Films
A. N. Georgobiani, A. N. Gruzintsev, V. T. Volkov, and M. O. Vorob'ev
pp. 265-269    Full Text: PDF (64 kB)

Effective Exciton Mass in III–V Semiconductors
N. S. Averkiev and K. S. Romanov
pp. 270-272    Full Text: PDF (41 kB)

Special Features of Charge Transport in PbGa₂Se₄ Crystals
B. G. Tagiev, N. N. Musaeva, and R. B. Dzhabbarov
pp. 273-275    Full Text: PDF (50 kB)

Efficiency of the Intercalation of Aluminum Atoms under a Monolayer and Submonolayer Two-Dimensional Graphite Film on a Metal
N. R. Gall, E. V. Rut'kov, and A. Ya. Tontegode
pp. 276-281    Full Text: PDF (74 kB)

Simulation of Hydrogen Penetration into p-Type Silicon under Wet Chemical Etching
O. V. Feklisova, E. B. Yakimov, and N. A. Yarykin
pp. 282-285    Full Text: PDF (54 kB)

Internal Ionization Energy in II–VI Compounds
A. V. Komashchenko, V. N. Komashchenko, K. V. Kolezhuk, G. I. Sheremetova, V. D. Fursenko, and Yu. N. Bobrenko
pp. 286-289    Full Text: PDF (55 kB)

Influence of the Misfit-Dislocation Screw Component on the Formation of Threading Dislocations in Semiconductor Heterostructures
E. M. Trukhanov, A. V. Kolesnikov, A. P. Vasilenko, and A. K. Gutakovskii
pp. 290-297    Full Text: PDF (169 kB)

Optical Properties of Ultradisperse CdSe_xTe_1 – x (0 <= x <= 1) Particles in a Silicate Glass Matrix
I. V. Bodnar, V. S. Gurin, A. P. Molochko, N. P. Solovei, P. V. Prokoshin, and K. V. Yumashev
pp. 298-306    Full Text: PDF (267 kB)

Soliton Shape Stabilization in a Superlattice with Next-to-Nearest Neighbor Spectrum in a Field of a Nonlinear Wave
S. V. Kryuchkov and É. G. Fedorov
pp. 307-310    Full Text: PDF (54 kB)

Resonance Transitions between Split Levels in Three-Barrier Nanostructures and the Prospects of Using these Structures in Devices Operating in the Submillimeter-Wave Band
E. I. Golant and A. B. Pashkovskii
pp. 311-318    Full Text: PDF (91 kB)

Microwave Photoconductivity in Nanocrystalline Porous Titanium Oxide Subjected to Pulsed Laser Excitation
E. A. Konstantinova, V. Yu. Timoshenko, P. K. Kashkarov, V. G. Kytin, V. Ya. Gaivoronskii, H. Porteanu, Th. Dittrich, and F. Koch
pp. 319-324    Full Text: PDF (85 kB)

Special Features of Recombination of Nonequilibrium Charge Carriers in Porous Silicon with Different Nanostructure Morphologies
M. G. Lisachenko, E. A. Konstantinov, V. Yu. Timoshenko, and P. K. Kashkarov
pp. 325-329    Full Text: PDF (63 kB)

Changes in Properties of a /Silicon System during Gradual Etching off of the Porous Silicon Layer
E. F. Venger, T. Ya. Gorbach, S. I. Kirillova, V. E. Primachenko, and V. A. Chernobai
pp. 330-335    Full Text: PDF (124 kB)

Carrier Transport in Porous Silicon
N. S. Averkiev, L. P. Kazakova, and N. N. Smirnova
pp. 336-339    Full Text: PDF (65 kB)

Solar Cells Based on CuIn_1 – xGa_xSe₂ Films Obtained by Pulsed Laser Evaporation
V. F. Gremenok, I. V. Bodnar', V. Yu. Rud', Yu. V. Rud', and H.-W. Schock
pp. 340-343    Full Text: PDF (57 kB)

Analysis of Threshold Current Density and Optical Gain in InGaAsP Quantum Well Lasers
N. A. Pikhtin, S. O. Sliptchenko, Z. N. Sokolova, and I. S. Tarasov
pp. 344-353    Full Text: PDF (120 kB)

The Use of SiC Triode Structures as Detectors of Nuclear Particles
N. B. Strokan, A. M. Ivanov, N. S. Savkina, D. V. Davydov, E. V. Bogdanova, and A. A. Lebedev
pp. 354-357    Full Text: PDF (56 kB)

Electrical Properties of Silicon Layers Implanted with Erbium and Oxygen Ions in a Wide Dose Range and Thermally Treated in Different Temperature Conditions
O. V. Aleksandrov, A. O. Zakhar'in, N. A. Sobolev, and Yu. A. Nikolaev
pp. 358-361    Full Text: PDF (60 kB)

Igor' Georgievich Neizvestnyi (on his 70th birthday)

p. 362    Full Text: PDF (85 kB)