Semiconductors -- April 2002

Changes in the State of Phosphorus Atoms in the Silicon Lattice as a Result of Interaction with Radiation Defects
V. V. Bolotov, G. N. Kamaev, and L. S. Smirnov
pp. 363-366    Full Text: PDF (52 kB)

Ultrasonically Stimulated Low-Temperature Redistribution of Impurities in Silicon
I. V. Ostrovskii, A. B. Nadtochii, and A. A. Podolyan
pp. 367-369    Full Text: PDF (49 kB)

Simulation of Low-Temperature Arsenic Diffusion from a Heavily Doped Silicon Layer
O. V. Aleksandrov
pp. 370-374    Full Text: PDF (64 kB)

Generalized Character of the Dielectric Response of CdTe Crystals Grown from the Melt
I. A. Klimenko and V. P. Migal'
pp. 375-378    Full Text: PDF (51 kB)

Effect of the Radial Electric Field on Absorption in a Quantized Spherical Layer
V. A. Arutyunyan
pp. 379-381    Full Text: PDF (46 kB)

Photoelectric C–V Profiling of Majority Charge Carriers and Effective Lifetimes of Minority Charge Carriers in Gettered GaAs Wafers
V. F. Andrievskii, A. T. Gorelenok, N. A. Zagorel'skaya, A. V. Kamanin, and N. M. Shmidt
pp. 382-384    Full Text: PDF (51 kB)

Effective Electron Mass in Heavily Doped GaAs in the Ordering of Impurity Complexes
V. A. Bogdanova, N. A. Davletkil'deev, N. A. Semikolenova, and E. N. Sidorov
pp. 385-389    Full Text: PDF (74 kB)

Determination of the Matrix Element of the Quasi-Momentum Operator in the Zero-Gap Semiconductor HgSe by the Field-Effect Method in Electrolyte
O. Yu. Shevchenko, V. F. Radantsev, A. M. Yafyasov, V. B. Bozhevolnov, I. M. Ivankiv, and A. D. Perepelkin
pp. 390-393    Full Text: PDF (50 kB)

Energy Transfer of Ce³⁺ --> Eu²⁺ in the CaGa₂S₄ Compound
R. B. Dzhabbarov
pp. 394-397    Full Text: PDF (49 kB)

Features of Optical Properties of Al_xGa_1 – xN Solid Solutions
V. G. Deibuk, A. V. Voznyi, and M. M. Sletov
pp. 398-403    Full Text: PDF (74 kB)

Increase in Quantum Efficiency of IR Emission in Elastically Strained Narrow-Gap Semiconductors
S. G. Gasan-zade, M. V. Strikha, S. V. Staryi, G. A. Shepel'skii, and V. A. Boiko
pp. 404-409    Full Text: PDF (88 kB)

Analysis and Refinement of Mathematical Tools for Modified Time-of-Flight Method
S. P. Vikhrov, N. V. Vishnyakov, A. A. Maslov, and V. G. Mishustin
pp. 410-413    Full Text: PDF (52 kB)

Causes of Variation in the Static Current–Voltage Characteristics of the Structures with the Me/n–n⁺-GaAs Schottky Barrier on Hydrogenation
N. A. Torkhov
pp. 414-419    Full Text: PDF (81 kB)

Field Effect in a System Consisting of Electrolyte and (TlBiSe₂)_1 – x–(TlBiS₂)_x Solid Solution
O. Yu. Shevchenko, A. M. Yafyasov, V. B. Bozhevol'nov, I. M. Ivankiv, and A. D. Perepelkin
pp. 420-423    Full Text: PDF (68 kB)

Effect of Surface on the Excitonic Characteristics of Semiconductors
V. G. Litovchenko, N. L. Dmitruk, D. V. Korbutyak, and A. V. Sarikov
pp. 424-429    Full Text: PDF (81 kB)

Nature of the Edge Electroluminescence Peak in the Si:(Er,O) Diode Breakdown Mode
A. M. Emel'yanov, Yu. A. Nikolaev, and N. A. Sobolev
pp. 430-433    Full Text: PDF (66 kB)

Control of the Interband and Intersubband Transition Energy in Quantum Wells Using Localized Isoelectronic Perturbations
K. Durinyan, A. Zatikyan, and S. Petrosyan
pp. 434-438    Full Text: PDF (72 kB)

Quantized Conductance in Silicon Quantum Wires
N. T. Bagraev, A. D. Buravlev, L. E. Klyachkin, A. M. Malyarenko, W. Gehlhoff, V. K. Ivanov, and I. A. Shelykh
pp. 439-460    Full Text: PDF (389 kB)

Exciton Recombination in delta-Doped Type-II GaAs/AlAs Superlattices
K. S. Zhuravlev, A. K. Sulaimanov, A. M. Gilinskii, L. S. Braginskii, A. I. Toropov, and A. K. Bakarov
pp. 461-465    Full Text: PDF (76 kB)

The Effect of Adsorption on the Electrical Properties of Structures Based on Oxidized Porous Silicon
D. I. Bilenko, O. Ya. Belobrovaya, É. A. Zharkova, I. B. Mysenko, and E. I. Khasina
pp. 466-471    Full Text: PDF (75 kB)

Special Features of Electron Drift in Submicrometer GaAs Structures
V. A. Gergel', E. Yu. Kul'kova, V. G. Mokerov, M. V. Timofeev, and G. Yu. Khrenov
pp. 472-475    Full Text: PDF (51 kB)

Long-Term Variation of Electrical and Photoelectric Characteristics of Pd–p-InP Diode Structures
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
pp. 476-479    Full Text: PDF (63 kB)