Semiconductors -- June 2002
Volume 36, Issue 6,
pp. 605-716
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Formation of Selenium-Containing Complexes in Silicon
A. A. Taskin and E. G. Tishkovskii
pp. 605-614
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Growth of Diamond Films on Crystalline Silicon by Hot-Filament Chemical Vapor Deposition
M. V. Baidakova, A. Ya. Vul', V. G. Golubev, S. A. Grudinkin, V. G. Melekhin, N. A. Feoktistov, and A. Krüger
pp. 615-620
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Local Vibrational Modes of the OxygenVacancy Complex in Germanium
V. V. Litvinov, L. I. Murin, J. L. Lindstrom, V. P. Markevich, and A. N. Petukh
pp. 621-624
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Luminescent SiGe Solid Solution Layers Er-Doped in Molecular-Beam Epitaxy
V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, B. A. Andreev, Z. F. Krasil'nik, B. Ya. Ber, Yu. N. Drozdov, and A. N. Yablonsky
pp. 625-628
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Migration of Laser-Induced Point Defects in IVVI Compounds
S. V. Plyatsko
pp. 629-635
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Physical Properties of Semi-Insulating CdTe:Cl Single Crystals Grown from the Vapor Phase
V. D. Popovich, G. M. Grigorovich, P. M. Peleshchak, and P. N. Tkachuk
pp. 636-640
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Low-Temperature Time-Resolved Photoluminescence in InGaN/GaN Quantum Wells
A. V. Andrianov, V. Yu. Nekrasov, N. M. Shmidt, E. E. Zavarin, A. S. Usikov, N. N. Zinov'ev, and M. N. Tkachuk
pp. 641-646
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SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Silicon Nanocrystal Formation upon Annealing of SiO2 Layers Implanted with Si Ions
G. A. Kachurin, S. G. Yanovskaya, V. A. Volodin, V. G. Kesler, A. F. Leier, and M.-O. Ruault
pp. 647-651
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Role of Silicon Vacancies in Formation of Schottky Barriers at Ag and Au Contacts to 3C- and 6H-SiC
S. Yu. Davydov, A. A. Lebedev, O. V. Posrednik, and Yu. M. Tairov
pp. 652-654
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Measurements of Deep Trap Concentration in Diodes with a High Schottky Barrier by Deep-Level Transient Spectroscopy
E. N. Agafonov, A. N. Georgobiani, and L. S. Lepnev
pp. 655-658
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Simulation of the Energy Spectrum of Surface States in an MIS Structure Taking Current Leakage through the Insulator into Account
L. S. Berman
pp. 659-662
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LOW-DIMENSIONAL SYSTEMS
Mixed Vibrational Modes of PbTe Nanocrystallites
A. I. Belogorokhov, L. I. Belogorokhova, D. R. Khokhlov, and S. V. Lemeshko
pp. 663-669
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Electron States in (AlAs)M(AlxGa1 xAs)N Superlattices
G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov
pp. 670-673
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Electron Mobility in a AlGaAs/GaAs/AlGaAs Quantum Well
V. G. Mokerov, G. B. Galiev, J. Pozela, K. Pozela, and V. Juciene
pp. 674-678
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Resonance Transfer of Charge Carriers in Si/CaF2 Periodic Nanostructures via Trap States in Insulator Layers
Yu. A. Berashevich, A. L. Danilyuk, and V. E. Borisenko
pp. 679-684
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Inversion of the Electron Population in Subbands of Dimensional Quantization with Longitudinal Transport in Tunnel-Coupled Quantum Wells
V. Ya. Aleshkin and A. A. Dubinov
pp. 685-690
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AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Photoconductivity of Nanostructured Hydrogenated Silicon Films
O. A. Golikova
pp. 691-694
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Vibratonal Spectroscopy of a-C:H(Co)
T. K. Zvonareva, E. I. Ivanova, G. S. Frolova, V. M. Lebedev, and V. I. Ivanov-Omskii
pp. 695-700
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PHYSICS OF SEMICONDUCTOR DEVICES
Spontaneous and Stimulated Emission from Magnetron-Deposited ZnOSiO2Si Thin-Film Nanocavities
A. N. Gruzintsev, V. T. Volkov, C. Barthou, and P. Benalloul
pp. 701-705
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Photoelectric Properties of p+n Junctions Based on 4H-SiC Ion-Implanted with Aluminum
G. N. Violina, E. V. Kalinina, G. F. Kholujanov, G. A. Onushkin, V. G. Kossov, R. R. Yafaev, A. Hallén, and A. O. Konstantinov
pp. 706-709
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Silicon Carbide Detectors of High-Energy Particles
G. N. Violina, E. V. Kalinina, G. F. Kholujanov, V. G. Kossov, R. R. Yafaev, A. Hallén, and A. O. Konstantinov
pp. 710-713
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Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation Measurements at 1.55 µm
N. Yu. Gordeev, L. Ya. Karachinsky, I. I. Novikov, A. V. Lyutetsky, N. A. Pikhtin, N. V. Fetisova, I. S. Tarasov, and P. S. Kop'ev
pp. 714-716
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