Semiconductors -- July 2002

Wannier–Stark Localization in the Natural Superlattice of Silicon Carbide Polytypes
V. I. Sankin
pp. 717-739    Full Text: PDF (428 kB)

Effect of Long-Term Annealing on Accumulation of Impurities
Yu. A. Bykovskii^[dagger], G. M. Voronkova, V. V. Grigor'ev, V. V. Zuev, A. V. Zuev, A. D. Kiryukhin, V. I. Chmyrev, and S. A. Shcherbakov
pp. 740-742    Full Text: PDF (41 kB)

Analysis of the Size-Distribution Function of Metallic Nanoclusters in a Hydrogenated Amorphous Carbon Host
V. I. Ivanov-Omskii, A. B. Lodygin, and S. G. Yastrebov
pp. 743-746    Full Text: PDF (156 kB)

Modification of the Electrical and Photoelectric Properties of Mg_0.15Cd_0.85Te Solid Solutions as a Result of Pulsed Laser Irradiation within the Transparency Range
A. Baidullaeva, E. F. Venger, A. I. Vlasenko, A. V. Lomovtsev, and P. E. Mozol'
pp. 747-750    Full Text: PDF (54 kB)

Titanium, Vanadium, and Nickel Impurities in 3C-SiC: Electronic Structure and Lattice Relaxation Effects
N. I. Medvedeva, É. I. Yuryeva, and A. L. Ivanovskii
pp. 751-754    Full Text: PDF (99 kB)

Parameters of Excitons in Monoclinic Zinc Diarsenide
A. I. Kozlov, S. G. Kozlova, A. V. Matveev, and V. V. Sobolev
pp. 755-757    Full Text: PDF (49 kB)

Structure and Properties of Silicon Carbide Grown on Porous Substrate by Vacuum Sublimation Epitaxy
N. S. Savkina, V. V. Ratnikov, A. Yu. Rogachev, V. B. Shuman, A. S. Tregubova, and A. A. Volkova
pp. 758-762    Full Text: PDF (158 kB)

The Effect of Composition on the Properties and Defect Structure of the CdS–Ga₂S₃ Solid Solution
E. F. Venger, I. B. Ermolovich, V. V. Milenin, and V. P. Papusha
pp. 763-771    Full Text: PDF (127 kB)

Microwave Magnetoresistance of Compensated p-Ge:Ga in the Region of the Insulator–Metal Phase Transition
A. I. Veinger, A. G. Zabrodskii, and T. V. Tisnek
pp. 772-781    Full Text: PDF (115 kB)

Thermally Stimulated Currents in MnIn₂S₄ Single Crystals
N. N. Niftiev
pp. 782-783    Full Text: PDF (50 kB)

E₀ Photoreflectance Spectra of Semiconductor Structures with a High Density of Interface States
R. V. Kuz'menko and É. P. Domashevskaya
pp. 784-788    Full Text: PDF (59 kB)

Switching Effect in Si–CdS Heterojunctions Synthesized in Highly Nonequilibrium Conditions
A. P. Belyaev and V. P. Rubets
pp. 789-792    Full Text: PDF (80 kB)

Special Features of the Magnetodiode Effect in Multivalley Semiconductors at Low Temperatures
A. A. Abramov and I. N. Gorbatyi
pp. 793-799    Full Text: PDF (97 kB)

Behavior of Charge in a Buried Insulator of Silicon-on-Insulator Structures Subjected to Electric Fields
D. V. Nikolaev, I. V. Antonova, O. V. Naumova, V. P. Popov, and S. A. Smagulova
pp. 800-804    Full Text: PDF (70 kB)

Study of the Effect of Electron Irradiation on a GaSe–SiO₂ Structure by Spectroscopic Methods
T. D. Ibragimov, E. A. Dzhafarova, and Z. B. Safarov
pp. 805-807    Full Text: PDF (45 kB)

Calculation of the Low-Field Mobility of Quasi-Two-Dimensional Electrons in a GaAs/Al_0.36Ga_0.64As Superlattice at Temperatures in the Region of 77 K
S. I. Borisenko
pp. 808-815    Full Text: PDF (103 kB)

GaAs in GaSb: Strained Nanostructures for Mid-Infrared Optoelectronics
V. A. Solov'ev, A. A. Toropov, B. Ya. Meltser, Ya. A. Terent'ev, R. N. Kyutt, A. A. Sitnikova, A. N. Semenov, S. V. Ivanov, Motlan, E. M. Goldys, and P. S. Kop'ev
pp. 816-820    Full Text: PDF (178 kB)

Inhomogeneous Broadening of the Ground Electron Level in a Quantum Dot Array
V. I. Belyavskii and S. V. Shevtsov
pp. 821-827    Full Text: PDF (85 kB)

Optically Pumped "Immersion-Lens" Infrared Light Emitting Diodes Based on Narrow-Gap III–V Semiconductors
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
pp. 828-831    Full Text: PDF (58 kB)

Amorphization of the Surface Region in Epitaxial n-GaAs Treated with Atomic Hydrogen
N. A. Torkhov, I. V. Ivonin, and E. V. Chernikov
pp. 832-836    Full Text: PDF (253 kB)