Semiconductors -- August 2002

Measurements of Parameters of the Low-Temperature Molecular-Beam Epitaxy of GaAs
V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
pp. 837-840    Full Text: PDF (60 kB)

Threshold of Inelastic Strain Formation in Si and GaAs Surface Layers under Multiple Pulsed Laser Irradiation
S. V. Vintsents, A. V. Zoteev, and G. S. Plotnikov
pp. 841-844    Full Text: PDF (58 kB)

Dissociation Energies of a C_iC_s Complex and the A Center in Silicon
N. I. Boyarkina, S. A. Smagulova, and A. A. Artem'ev
pp. 845-847    Full Text: PDF (46 kB)

Initial Stages of Growth of Diamond Island Films on Crystalline Silicon
N. A. Feoktistov, V. V. Afanas'ev, V. G. Golubev, S. A. Grudinkin, S. A. Kukushkin, and V. G. Melekhin
pp. 848-851    Full Text: PDF (141 kB)

Local Structure of Zinc Impurity Centers in Lead Chalcogenides and Pb_1 – xSn_xTe Solid Solutions
S. A. Nemov and N. P. Seregin
pp. 852-854    Full Text: PDF (100 kB)

Influence of Tellurium Impurity on the Properties of Ga_1 – XIn_XAs_YSb_1 – Y (X > 0.22) Solid Solutions
T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, M. A. Sipovskaya, and Yu. P. Yakovlev
pp. 855-862    Full Text: PDF (104 kB)

Optical Properties of Bulk and Epitaxial Unordered Ga_xIn_1 – xP Semiconductor Alloys
Ya. I. Vyklyuk, V. G. Deibuk, and S. V. Zolotarev
pp. 863-868    Full Text: PDF (89 kB)

Electrical and Thermoelectric Properties of p-Ag₂Te
F. F. Aliev, E. M. Kerimova, and S. A. Aliev
pp. 869-873    Full Text: PDF (74 kB)

Photoconductivity of Coarse-Grained CdTe Polycrystals
S. A. Medvedev, Yu. V. Klevkov, S. A. Kolosov, V. S. Krivobok, and A. F. Plotnikov
pp. 874-877    Full Text: PDF (51 kB)

Time-Resolved Photoluminescence of Polycrystalline GaN Layers on Metal Substrates
A. V. Andrianov, K. Yamada, H. Tampo, H. Asahi, V. Yu. Nekrasov, Z. N. Petrovskaya, O. M. Sreseli, and N. N. Zinov'ev
pp. 878-882    Full Text: PDF (66 kB)

Low-Threshold Defect Formation and Modification of Ge Surface Layer under Elastic and Elastoplastic Pulsed Laser Effects
S. V. Vintsents, V. B. Zaitsev, A. V. Zoteev, G. S. Plotnikov, A. I. Rodionov, and A. V. Chervyakov
pp. 883-888    Full Text: PDF (79 kB)

Electron Tunneling through a Double Barrier in a Reverse-Biased Metal–Oxide–Silicon Structure
G. G. Kareva, M. I. Vexler, I. V. Grekhov, and A. F. Shulekin
pp. 889-894    Full Text: PDF (89 kB)

Structure of Heterointerfaces and Photoluminescence Properties of GaAs/AlAs Superlattices Grown on (311)A and (311)B Surfaces: Comparative Analysis
G. A. Lyubas, N. N. Ledentsov, D. Litvinov, B. R. Semyagin, I. P. Soshnikov, V. M. Ustinov, V. V. Bolotov, and D. Gerthsen
pp. 895-898    Full Text: PDF (138 kB)

Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound
A. E. Zhukov, A. R. Kovsh, E. S. Semenova, V. M. Ustinov, L. Wei, J.-S. Wang, and J. Y. Chi
pp. 899-902    Full Text: PDF (66 kB)

Two-Dimensional p–n Junction under Equilibrium Conditions
A. Sh. Achoyan, A. É. Yesayan, É. M. Kazaryan, and S. G. Petrosyan
pp. 903-907    Full Text: PDF (70 kB)

Calculations of the Charge-Carrier Mobility and the Thermoelectric Figure of Merit for Multiple-Quantum-Well Structures
D. A. Pshenai-Severin and Yu. I. Ravich
pp. 908-915    Full Text: PDF (91 kB)

Nonlinear Response and Nonlinear Coherent Generation in Resonant-Tunneling Diode in a Broad Frequency Range
V. F. Elesin, I. Yu. Kateev, and A. I. Podlivaev
pp. 916-920    Full Text: PDF (61 kB)

Anomalies of the Fractional Quantum Hall Effect in a Wide Ballistic Wire
Z. D. Kvon, E. B. Olshanetsky, A. E. Plotnikov, A. I. Toropov, and J. C. Portal
pp. 921-923    Full Text: PDF (46 kB)

Special Features of Electrical Conductivity in a Parabolic Quantum Well in a Magnetic Field
E. P. Sinyavskii and R. A. Khamidullin
pp. 924-928    Full Text: PDF (59 kB)

Manifestation of A(+) Centers in the Luminescence of Two-Dimensional GaAs/AlGaAs Structures
Yu. L. Ivanov, N. V. Agrinskaya, P. V. Petrov, V. M. Ustinov, and G. É. Tsyrlin
pp. 929-931    Full Text: PDF (43 kB)

One-Dimensional Photonic Crystal Obtained by Vertical Anisotropic Etching of Silicon
V. A. Tolmachev, L. S. Granitsyna, E. N. Vlasova, B. Z. Volchek, A. V. Nashchekin, A. D. Remenyuk, and E. V. Astrova
pp. 932-935    Full Text: PDF (263 kB)

Gamma-Irradiation-Induced Metastable States of Undoped Amorphous Hydrogenated Silicon
M. S. Ablova, G. S. Kulikov, and S. K. Persheev
pp. 936-940    Full Text: PDF (73 kB)

Fabrication and Properties of Amorphous Hydrogenated Boron Carbide Films
A. S. Anan'ev, O. I. Kon'kov, V. M. Lebedev, A. N. Novokhatski, E. I. Terukov, and I. N. Trapeznikova
pp. 941-943    Full Text: PDF (47 kB)

Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov, and E. A. Kognovitskaya
pp. 944-949    Full Text: PDF (71 kB)

Viktor Il'ich Fistul' (on his 75th birthday)

pp. 950-951    Full Text: PDF (71 kB)