Semiconductors -- October 2002

Thermodynamic Stability of Bulk and Epitaxial Ge_1 – xSn_x Semiconductor Alloys
V. G. Deibuk and Yu. G. Korolyuk
pp. 1073-1076    Full Text: PDF (56 kB)

The Effect of the Concentration of the Majority Charge Carriers and Irradiation Intensity on the Efficiency of Radiation-Defect Production in n-Si Crystals
T. A. Pagava and Z. V. Basheleishvili
pp. 1077-1078    Full Text: PDF (35 kB)

Dependence of the Annealing Kinetics of A Centers and Divacancies on Temperature, Particle Energy, and Irradiation Dose for n-Si Crystals
T. A. Pagava
pp. 1079-1082    Full Text: PDF (64 kB)

Chalcogen Dimers in Silicon
A. A Taskin
pp. 1083-1090    Full Text: PDF (110 kB)

Chemical Bonding and Elastic Constants of Certain Ternary III–V Solid Solutions
V. G. Deibuk and Ya. I. Viklyuk
pp. 1091-1096    Full Text: PDF (74 kB)

The Nucleation of Coherent Semiconductor Islands during the Stranski–Krastanov Growth Induced by Elastic Strains
S. A. Kukushkin, A. V. Osipov, F. Schmitt, and P. Hess
pp. 1097-1105    Full Text: PDF (140 kB)

Investigation of Vacancy-Type Complexes in GaN and AlN using Positron Annihilation
N. Yu. Arutyunov, A. V. Mikhailin, V. Yu. Davydov, V. V. Emtsev, G. A. Oganesyan, and E. E. Haller
pp. 1106-1110    Full Text: PDF (69 kB)

The Influence of Shallow Impurities on the Temperature Dependence of Microhardness and the Photomechanical Effect in Semiconductors
A. B. Gerasimov and G. D. Chiradze
pp. 1111-1113    Full Text: PDF (43 kB)

Neutron-Irradiation-Induced Effects Caused by Divacancy Clusters with a Tetravacancy Core in Float-Zone Silicon
P. F. Ermolov, D. E. Karmanov, A. K. Leflat, V. M. Manankov, M. M. Merkin, and E. K. Shabalina
pp. 1114-1122    Full Text: PDF (103 kB)

Electronic Properties of Liquid Tl₂Te, Tl₂Se, Ag₂Te, Cu₂Te, and Cu₂Se Alloys
V. M. Sklyarchuk and Yu. O. Plevachuk
pp. 1123-1127    Full Text: PDF (73 kB)

Dependence of GaN Photoluminescence on the Excitation Intensity
V. N. Bessolov, V. V. Evstropov, M. E. Kompan, and M. V. Mesh
pp. 1128-1131    Full Text: PDF (57 kB)

Photosensitivity of Structures Based on I–III_n–VI_m Ternary Compounds Containing Ordered Vacancies
I. V. Bodnar', V. Yu. Rud', Yu. V. Rud', and M. V. Yakushev
pp. 1132-1135    Full Text: PDF (55 kB)

Effect of the State of the Silicon Surface on Hydrogen Sensitivity of Pd/n-Si Barrier Structures
V. M. Kalygina, L. S. Khludkova, V. I. Balyuba, and T. A. Davydova
pp. 1136-1137    Full Text: PDF (30 kB)

Electrical Properties of Narrow-Gap HgMnTe Schottky Diodes
L. A. Kosyachenko, A. V. Markov, S. É. Ostapov, I. M. Rarenko, V. M. Sklyarchuk, and Ye. F. Sklyarchuk
pp. 1138-1145    Full Text: PDF (105 kB)

Anisotropy of Magnetooptical Absorption of Quantum Dot–Impurity Center Complexes
V. D. Krevchik, A. B. Grunin, and R. V. Zaitsev
pp. 1146-1153    Full Text: PDF (106 kB)

Dependence of the Optical Gap of Si Quantum Dots on the Dot Size
V. A. Burdov
pp. 1154-1158    Full Text: PDF (61 kB)

Dependence of Scattering of Quasi-Two-Dimensional Electrons by Acoustic Phonons on the Parameters of a GaAs/Al_xGa_1 – xAs Superlattice
S. I. Borisenko
pp. 1159-1162    Full Text: PDF (53 kB)

Temperature Dependence of Conductance of Electrostatically Disordered Quasi-2D Semiconductor Systems Near an Insulator–Metal Percolation Transition
A. B. Davydov, B. A. Aronzon, D. A. Bakaushin, and A. S. Vedeneev
pp. 1163-1168    Full Text: PDF (92 kB)

Photoluminescence and Recombination Luminescence in Amorphous Molecular Semiconductors Doped with Organic Dyes
N. A. Davidenko, S. L. Studzinskii, N. A. Derevyanko, A. A. Ishchenko, Yu. A. Skryshevskii, and A. J. Al-Kahdymi
pp. 1169-1179    Full Text: PDF (135 kB)

Crystallization of Amorphous Hydrogenated Silicon Films Deposited under Various Conditions
O. A. Golikova^[dagger], E. V. Bogdanova, and U. S. Babakhodzhaev
pp. 1180-1183    Full Text: PDF (55 kB)

Electroluminescence from Porous Silicon in the Cathodic Reduction of Persulfate Ions: Degree of Reversibility of the Tuning Effect
A. A. Saren, S. N. Kuznetsov, V. B. Pikulev, Yu. E. Gardin, and V. A. Gurtov
pp. 1184-1187    Full Text: PDF (59 kB)

Space Charge Limited Current in Porous Silicon and Anatase (TiO₂)
É. A. Lebedev and T. Dittrich
pp. 1188-1191    Full Text: PDF (57 kB)

Influence of the Design and Material Parameters on the Current–Voltage Characteristics of Two-Island Single-Electron Chains
I. I. Abramov, S. A. Ignatenko, and E. G. Novik
pp. 1192-1197    Full Text: PDF (81 kB)