Semiconductors -- November 2002

Vadim Fedorovich Masterov, a Scientist and a Teacher
V. K. Ivanov and B. P. Popov
pp. 1199-1201    Full Text: PDF (58 kB)

International Symposium on Photoluminescence and Electroluminescence of Rare-Earth Elements in Semiconductors and Insulators
E. I. Terukov
pp. 1202-1203    Full Text: PDF (19 kB)

V. F. Masterov's School and Fullerene Research at the Department of Experimental Physics, St. Petersburg State Technical University
A. V. Prikhodko and O. I. Konkov
pp. 1204-1208    Full Text: PDF (84 kB)

A Model for the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions
O. V. Aleksandrov and A. O. Zakhar'in
pp. 1209-1214    Full Text: PDF (70 kB)

Emission from Rare-Earth Centers in (ZnTe:Yb):O/GaAs
V. M. Konnov, N. N. Loiko, Yu. G. Sadof'ev, A. S. Trushin, and E. I. Makhov
pp. 1215-1220    Full Text: PDF (75 kB)

Temperature Dependences of Photoluminescence Spectra of Single-Crystal Ca₂GeO₄:Cr⁴⁺ Films
O. N. Gorshkov, E. S. Demidov, E. M. Dianov, A. P. Kasatkin, V. F. Lebedev, G. A. Maksimov, S. A. Tyurin, A. B. Chigineva, Yu. I. Chigirinskii, and A. N. Shushunov
pp. 1221-1224    Full Text: PDF (60 kB)

Effect of Surface State Density on Room Temperature Photoluminescence from Si–SiO₂ Structures in the Range of Band-to-Band Recombination in Silicon
A. M. Emel'yanov, N. A. Sobolev, and S. Pizzini
pp. 1225-1226    Full Text: PDF (34 kB)

Buried Nanoscale Damaged Layers Formed in Si and SiC Crystals as a Result of High-Dose Proton Implantation
V. A. Kozlov, V. V. Kozlovskii, A. N. Titkov, M. S. Dunaevskii, and A. K. Kryzhanovskii
pp. 1227-1234    Full Text: PDF (502 kB)

The Formation of beta-FeSi₂ Precipitates in Microcrystalline Si
E. I. Terukov, O. I. Kon'kov, V. Kh. Kudoyarova, O. B. Gusev, V. Yu. Davydov, and G. N. Mosina
pp. 1235-1239    Full Text: PDF (164 kB)

Erbium Electroluminescence in p–i–n Amorphous Hydrogenated Silicon Structures
E. I. Terukov, O. B. Gusev, O. I. Kon'kov, Yu. K. Undalov, M. Stutzmann, A. Janotta, H. Mell, and J. P. Kleider
pp. 1240-1243    Full Text: PDF (50 kB)

Photoluminescence and Excitation Features of Nd³⁺ Ions in (La_0.97Nd_0.03)₂S₃ · 2Ga₂O₃ Glasses
A. A. Babaev, E. M. Zobov, V. V. Sokolov, and A. Kh. Sharapudinova
pp. 1244-1247    Full Text: PDF (59 kB)

Conductivity and Structure of Er-Doped Amorphous Hydrogenated Silicon Films
O. I. Kon'kov, E. I. Terukov, and L. S. Granitsina
pp. 1248-1251    Full Text: PDF (131 kB)

Nature of Impurity Centers of Rare-Earth Metals and Self-Organization Processes in a-Si:H Films
M. M. Mezdrogina, I. N. Trapeznikova, E. I. Terukov, F. S. Nasredinov, N. P. Seregin, and P. P. Seregin
pp. 1252-1259    Full Text: PDF (227 kB)

The Influence of Sinks of Intrinsic Point Defects on Phosphorus Diffusion in Si
O. V. Aleksandrov
pp. 1260-1266    Full Text: PDF (87 kB)

Possibility of Observing Bose–Einstein Condensation in Semiconductors via Mössbauer Spectroscopy using the ⁶⁷Zn Isotope
S. A. Nemov, N. P. Seregin, and S. M. Irkaev
pp. 1267-1269    Full Text: PDF (49 kB)

Radiation Hardness of Wide-Gap Semiconductors (using the Example of Silicon Carbide)
A. A. Lebedev, V. V. Kozlovski, N. B. Strokan, D. V. Davydov, A. M. Ivanov, A. M. Strel'chuk, and R. Yakimova
pp. 1270-1275    Full Text: PDF (64 kB)

Kinetic Theory of Negative Magnetoresistance as an Alternative to Weak Localization in Semiconductors
V. É. Kaminskii
pp. 1276-1282    Full Text: PDF (85 kB)

The Influence of Adsorbate on the Work Function and Penetrability of the Surface Potential Barrier of GaAs(110) Single Crystal
Yu. I. Asalkhanov and V. N. Abarykov
pp. 1283-1287    Full Text: PDF (62 kB)

ZnMnSe/ZnSSe Type-II Semimagnetic Superlattices: Growth and Magnetoluminescence Properties
A. A. Toropov, A.V. Lebedev, S. V. Sorokin, D. D. Solnyshkov, S. V. Ivanov, P. S. Kop'ev, I. A. Buyanova, W. M. Chen, and B. Monemar
pp. 1288-1293    Full Text: PDF (79 kB)

Ordering of Nanostructures in a Si/Ge_0.3Si_0.7/Ge System during Molecular Beam Epitaxy
G. E. Cirlin, V. A. Egorov, L. V. Sokolov, and P. Werner
pp. 1294-1298    Full Text: PDF (405 kB)

Effect of Fullerene on the Photogeneration and Transport of Charge Carriers in Triphenylamine-Containing Polyimides
E. L. Aleksandrova
pp. 1299-1302    Full Text: PDF (56 kB)

Flattening of Dynamic Dielectric Phase Grating and Single-Mode Lasing under the Conditions of Transverse Oscillations of Luminous Flux
A. P. Astakhova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, and Yu. P. Yakovlev
pp. 1303-1307    Full Text: PDF (59 kB)

High Power Single-Mode (lambda = 1.3–1.6 µm) Laser Diodes Based on Quantum Well InGaAsP/InP Heterostructures
A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Yu. A. Ryaboshtan, and I. S. Tarasov
pp. 1308-1314    Full Text: PDF (91 kB)

High Efficiency (eta_D > 80%) Long Wavelength (lambda > 1.25 µm) Quantum Dot Diode Lasers on GaAs Substrates
S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, A. P. Vasil'ev, E. S. Semenova, V. M. Ustinov, M. M. Kulagina, E. V. Nikitina, I. P. Soshnikov, Yu. M. Shernyakov, D. A. Livshits, N. V. Kryjanovskaya, D. S. Sizov, M. V. Maksimov, A. F. Tsatsul'nikov, N. N. Ledentsov, D. Bimberg, and Zh. I. Alferov
pp. 1315-1321    Full Text: PDF (94 kB)