Semiconductors -- December 2002
Volume 36, Issue 12,
pp. 1323-1402
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Influence of Segregation on the Composition of GaAs1 – xSbx Solid Solutions Grown by Liquid-Phase Epitaxy
Yu. F. Biryulin
pp. 1323-1325
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Temperature Dependence of the Width of the Deep-Level Band in Silicon with a High Concentration of Defects
J. Partyka, P. W. Zukowski, P. Wegierek, A. Rodzik, Yu. V. Sidorenko, and Yu. A. Shostak
pp. 1326-1331
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The Mechanisms of Hole Scattering in p-Hg0.8Cd0.2Te Crystals at Low Temperatures
V. V. Bogoboyashchii
pp. 1332-1340
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A DLTS Study of Deep Levels in the Band Gap of Textured Stoichiometric p-CdTe Polycrystals
E. A. Bobrova, Yu. V. Klevkov, S. A. Medvedev, and A. F. Plotnikov
pp. 1341-1346
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Electron Spin Resonance in Cd1 – xMnxTe and Zn1 – xMnxTe Compounds
J. Partyka, P. W. Zukowski, P. Wegierek, A. Rodzik, Yu. V. Sidorenko, and Yu. A. Shostak
pp. 1347-1351
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SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Deep Levels in the Band Gap of GaN Layers Irradiated with Protons
M. M. Sobolev, N. A. Sobolev, A. S. Usikov, N. M. Shmidt, A. N. Yakimenko, G. M. Gusinskii, and V. O. Naidenov
pp. 1352-1354
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Band-Edge Line-up in GaAs/GaAsN/InGaAs Heterostructures
A. Yu. Egorov, V. A. Odnoblyudov, N. V. Krizhanovskaya, V. V. Mamutin, and V. M. Ustinov
pp. 1355-1359
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LOW-DIMENSIONAL SYSTEMS
Analysis of Inelastic Scattering of Quasi-Two-Dimensional Electrons of a Superlattice by Acoustic Phonons with Allowance Made for the Miniband Dispersion
S. I. Borisenko
pp. 1360-1363
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Damping of Bloch Oscillations in Quantum Dot Superlattices: A General Approach
I. A. Dmitriev and R. A. Suris
pp. 1364-1374
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Damping of Bloch Oscillations in One-, Two-, and Three-Dimensional Quantum-Dot Superlattices
I. A. Dmitriev and R. A. Suris
pp. 1375-1384
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MBE Growth and Photoluminescent Properties of InAsSb/AlSbAs Quantum Wells
V. A. Solov'ev, Ya. V. Terent'ev, A. A. Toropov, B. Ya. Meltser, A. N. Semenov, A. A. Sitnikova, S. V. Ivanov, J. R. Meyer, and P. S. Kop'ev
pp. 1385-1388
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Weak Antilocalization and Spin–Orbit Interaction in a In0.53Ga0.47As/InP Quantum Well in the Persistent Photoconductivity State
D. D. Bykanov, S. V. Novikov, T. A. Polyanskaya, and I. G. Savel'ev
pp. 1389-1397
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PHYSICS OF SEMICONDUCTOR DEVICES
Isotope-Pure 28Si Layers Grown by VPE
O. N. Godisov, A. K. Kaliteevsky, A. Yu. Safronov, V. I. Korolev, P. N. Aruev, B. Ya. Ber, V. Yu. Davydov, N. V. Zabrodskaya, V. V. Zabrodsky, M. A. Kaliteevsky, P. S. Kop'ev, A. P. Kovarsky, and V. L. Sukhanov
pp. 1398-1399
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Isotope-Pure Silicon Layers Grown by MBE
O. N. Godisov, A. K. Kaliteevsky, A. Yu. Safronov, V. I. Korolev, B. Ya. Ber, V. Yu. Davydov, D. V. Denisov, M. A. Kaliteevsky, P. S. Kop'ev, A. P. Kovarsky, V. M. Ustinov, and H.-J. Pohl
pp. 1400-1402
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