Semiconductors -- January 2003
Volume 37, Issue 1,
pp. 1-118
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Multifrequency Kinks in Multifrequency External Fields
M. E. Polyakov
pp. 1-5
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Electrical Activity of Dislocations and Point Defects of Deformation Origin in CdxHg1 – xTe Crystals
S. G. Gasan-zade, S. V. Staryi, M. V. Strikha, and G. A. Shepel'skii
pp. 6-14
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Determination of Deformation Potential Constants for n- and p-Si from the Concentration Anharmonicity
A. A. Skvortsov, O. V. Litvinenko, and A. M. Orlov
pp. 15-19
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Influence of Electronic (Charge) State of E Traps on Their Introduction Rate in Irradiated n-GaAs
V. N. Brudnyi and V. V. Peshev
pp. 20-27
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SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Study of Photocapacitance in Diodes Fabricated from Silicon Doped with Vanadium
Kh. T. Igamberdiev, A. T. Mamadalimov, R. A. Muminov, T. A. Usmanov, and Sh. A. Shoyusupov
pp. 28-30
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Investigation of Magnetosensitivity of Transistor Structures with Diffusive Transport of Injected Charge Carriers
M. A. Glauberman, V. V. Yegorov, V. V. Kozel, and N. A. Kanishcheva
pp. 31-37
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Size Effect in Two-Photon Absorption of Recombination Radiation in Graded-Gap AlxGa1 – xAs Solid Solutions
V. F. Kovalenko and S. V. Shutov
pp. 38-43
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Mathematical Simulation of the Kinetics of High-Temperature Silicon Oxidation and the Structure of the Boundary Layer in the Si–SiO2 System
G. Ya. Krasnikov, N. A. Zaitsev, and I. V. Matyushkin
pp. 44-49
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Effect of Thermal Annealing of Radiation Defects on the Noise Characteristics of Silicon p–n Structures with a Thin Multiplication Region
A. K. Baranouskii, P. V. Kuchinskii, and E. D. Savenok
pp. 50-52
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Photoelectric Properties of Heterojunctions between Silicon and Polyhomoconjugated Organometallic Compounds
N. V. Blinova, E. L. Krasnopeeva, Yu. A. Nikolaev, A. Yu. Osadchev, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, and V. V. Shamanin
pp. 53-56
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Optical Transparency of Macroporous Silicon with Through Pores
E. V. Astrova, L. I. Korovin, I. G. Lang, A. D. Remenyuk, and V. B. Shuman
pp. 57-64
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Silicon Carbide Transistor Structures as Detectors of Weakly Ionizing Radiation
N. B. Strokan, A. M. Ivanov, M. E. Boiko, N. S. Savkina, A. M. Strel'chuk, A. A. Lebedev, and R. Yakimova
pp. 65-69
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LOW-DIMENSIONAL SYSTEMS
Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices at the Threshold of Quantum Dot Formation
V. A. Kul'bachinskii, R. A. Lunin, V. A. Rogozin, V. G. Mokerov, Yu. V. Fedorov, Yu. V. Khabarov, E. Narumi, K. Kindo, and A. de Visser
pp. 70-76
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Investigation of Electronic Transitions in Coupled-Quantum-Well Structures with a Built-in Electric Field by Photoreflectance Spectroscopy
G. B. Galiev, V. É. Kaminskii, V. G. Mokerov, L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, and V. A. Kul'bachinskii
pp. 77-81
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AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Influence of Charged Defects on Detection of Electron Spin Resonance in Vitreous Chalcogenide Semiconductors
L. P. Ginzburg
pp. 82-91
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Electrical Properties of Si:H/p-Si Structures Fabricated by Hydrogen Implantation
O. V. Naumova, I. V. Antonova, V. P. Popov, and V. F. Stas'
pp. 92-96
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Structural–Phase Transformations in SiOx Films in the Course of Vacuum Heat Treatment
I. P. Lisovskyy, I. Z. Indutnyy, B. N. Gnennyy, P. M. Lytvyn, D. O. Mazunov, A. S. Oberemok, N. V. Sopinskyy, and P. E. Shepelyavyi
pp. 97-102
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The Influence of Hydrogen Plasma on the Electroreflectance Spectrum and the Spectrum of Electron States of Porous Silicon
E. F. Venger, R. Yu. Holiney, L. A. Matveeva, and A. V. Vasin
pp. 103-107
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Optical Properties of Polydimethylphenyleneoxide Free-Standing Films Containing Fullerene
Yu. F. Biryulin, E. Yu. Melenevskaya, S. N. Mikov, S. E. Orlov, V. D. Petrikov, D. A. Syckmanov, and V. N. Zgonnik
pp. 108-111
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PHYSICS OF SEMICONDUCTOR DEVICES
Electroluminescence of Injection Lasers Based on Vertically Coupled Quantum Dots near the Lasing Threshold
N. Yu. Gordeev, S. V. Zaitsev, L. Ya. Karachinsky, V. I. Kopchatov, I. I. Novikov, V. M. Ustinov, and P. S. Kop'ev
pp. 112-114
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Tunneling Recombination in Silicon Avalanche Diodes
S. V. Bulyarskii, V. K. Ionychev, and V. V. Kuz'min
pp. 115-118
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