Semiconductors -- February 2003

Special Features of Structural Defects in Undoped CdTe Textured Ingots Produced by Free Growth from a Gasdynamic Vapor Flow
Yu. V. Klevkov, V. P. Martovitskii, and S. A. Medvedev
pp. 119-123    Full Text: PDF (163 kB)

Self-Organization of Laser-Induced Point Defects at the Initial Stages of Inelastic Photodeformation in Germanium
S. V. Vintsents, A. V. Zaitseva, and G. S. Plotnikov
pp. 124-130    Full Text: PDF (259 kB)

Photoinduced Annealing of Metastable Defects in Boron-Doped a-Si:H Films
I. A. Kurova, N. N. Ormont, and A. L. Gromadin
pp. 131-133    Full Text: PDF (45 kB)

Anomalies in Static and Dynamic Conductivity of Indium Monoselenide
G. V. Lashkarev, A. I. Dmitriev, A. A. Baida, Z. D. Kovalyuk, M. V. Kondrin, and A. A. Pronin
pp. 134-139    Full Text: PDF (86 kB)

The U Peak in the DLTS Spectra of n-GaAs Irradiated with Fast Neutrons and 65-MeV Protons
V. N. Brudnyi and V. V. Peshev
pp. 140-144    Full Text: PDF (75 kB)

Inversion of Conductivity Type in ZnSe Single Crystals Obtained by the Method of Free Growth
Yu. F. Vaksman, Yu. A. Nitsuk, Yu. N. Purtov, and P. V. Shapkin
pp. 145-147    Full Text: PDF (43 kB)

Specific Features of Determination of the Concentrations of Shallow-Level Impurities in Semiconductors from Analysis of Edge-Luminescence Spectra
K. D. Glinchuk and A. V. Prokhorovich
pp. 148-155    Full Text: PDF (105 kB)

Classification of Frequencies of the Shubnikov–de Haas Oscillations in Layered Charge-Ordered Crystals under Magnetic Breakdown
P. V. Gorskyi
pp. 156-159    Full Text: PDF (44 kB)

On the Experimental Data Processing of Magnetoresistance Oscillations in Two-Dimensional Electron Gas
N. S. Averkiev, A. M. Monakhov, N. I. Sablina, and P. M. Koenraad
pp. 160-164    Full Text: PDF (77 kB)

Electrical Properties of FeIn₂Se₄ Single Crystals
N. N. Niftiev, M. A. Alidzhanov, O. B. Tagiev, and M. B. Muradov
pp. 165-167    Full Text: PDF (60 kB)

An Impurity Band in Hg₃In₂Te₆ Crystals Doped with Silicon
P. N. Gorlei and O. G. Grushka
pp. 168-171    Full Text: PDF (80 kB)

Electrical Properties of the p⁺-Bi₂Te₃–p-GaSe Isotype Heterostructure
S. I. Drapak, V. A. Manasson, V. V. Netyaga, and Z. D. Kovalyuk
pp. 172-177    Full Text: PDF (104 kB)

Fabrication and Properties of Photosensitive Structures Based on ZnIn₂S₄ Single Crystals
A. A. Vaipolin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, and N. Fernelius
pp. 178-182    Full Text: PDF (84 kB)

Charge Transport in Fe–p-InP Diode Structures
S. V. Slobodchikov, Kh. M. Salikhov, and B. E. Samorukov
pp. 183-186    Full Text: PDF (57 kB)

Barrier Formation in a Heterostructure Formed of Native Oxide and p-InSe. Electrical and Photoelectrical Properties
S. I. Drapak, V. B. Orletskii, Z. D. Kovalyuk, and V. V. Netyaga
pp. 187-193    Full Text: PDF (97 kB)

Segregation of Indium in InGaAs/GaAs Quantum Wells Grown by Vapor-Phase Epitaxy
Yu. N. Drozdov, N. V. Baidus', B. N. Zvonkov, M. N. Drozdov, O. I. Khrykin, and V. I. Shashkin
pp. 194-199    Full Text: PDF (79 kB)

Rashba Effect in Inversion and Accumulation InAs layers
V. F. Radantsev, I. M. Ivankiv, and A. M. Yafyasov
pp. 200-206    Full Text: PDF (85 kB)

Photoluminescence from Germanium Quantum Wells and Quantum Dots in Silicon Grown by MBE at Low Temperature
T. M. Burbaev, V. A. Kurbatov, A. O. Pogosov, M. M. Rzaev, and N. N. Sibel'din
pp. 207-209    Full Text: PDF (49 kB)

Optical Properties of Structures with Ultradense Arrays of Ge QDs in an Si Matrix
A. G. Makarov, N. N. Ledentsov, A. F. Tsatsul'nikov, G. E. Cirlin, V. A. Egorov, V. M. Ustinov, N. D. Zakharov, and P. Werner
pp. 210-214    Full Text: PDF (197 kB)

Population Inversion between Gamma Subbands in Quantum Wells under the Conditions of Gamma–L Intervalley Transfer
V. Ya. Aleshkin, A. A. Andronov, and A. A. Dubinov
pp. 215-219    Full Text: PDF (76 kB)

Synthesis of New Carbon–Nitrogen Nanoclusters by Annealing Diamond-Like Carbon Films in Nitrogen
I. A. Faizrakhmanov, V. V. Bazarov, N. V. Kurbatova, I. B. Khaibullin, and A. L. Stepanov
pp. 220-223    Full Text: PDF (61 kB)

Effect of Thermal Annealing on Optical and Photoelectric Properties of Microcrystalline Hydrogenated Silicon Films
A. G. Kazanskii, H. Mell, and P. A. Forsh
pp. 224-226    Full Text: PDF (56 kB)

Electrical Properties of Surface-Barrier Diodes Based on CdZnTe
L. A. Kosyachenko, I. M. Rarenko, Z. I. Zakharchuk, V. M. Sklyarchuk, E. F. Sklyarchuk, I. V. Solonchuk, I. S. Kabanova, and E. L. Maslyanchuk
pp. 227-232    Full Text: PDF (80 kB)

Internal Quantum Efficiency of Stimulated Emission of (lambda = 1.55 µm) InGaAsP/InP Laser Diodes
G. V. Skrynnikov, G. G. Zegrya, N. A. Pikhtin, S. O. Slipchenko, V. V. Shamakhov, and I. S. Tarasov
pp. 233-238    Full Text: PDF (70 kB)